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2011 21st International Conference on Noise and Fluctuations最新文献

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RTS and 1/f noise in Ge nanowire transistors 锗纳米线晶体管的RTS和1/f噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994345
D. Pogany, C. Zeiner, S. Bychikhin, T. Burchhart, A. Lugstein, L. Vandamme
{"title":"RTS and 1/f noise in Ge nanowire transistors","authors":"D. Pogany, C. Zeiner, S. Bychikhin, T. Burchhart, A. Lugstein, L. Vandamme","doi":"10.1109/ICNF.2011.5994345","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994345","url":null,"abstract":"Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO<inf>2</inf> back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10–30% range is usually observed at drain currents below I<inf>D</inf>=1nA. For higher currents, 1/f noise becomes dominant. With the current increase, the normalized power spectral density (S<inf>I</inf>/I<inf>D</inf><sup>2</sup>) is first independent on ID and then drops as I<inf>D</inf><sup>−1</sup>. Considering dominant mobility fluctuations due to scattering on surface defects a Hooge parameter of 4×10<sup>−3</sup> has been estimated.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132574184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
On the zero crossings of a generalized shot noise process 广义散粒噪声过程的过零点问题
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994290
R. Howard
{"title":"On the zero crossings of a generalized shot noise process","authors":"R. Howard","doi":"10.1109/ICNF.2011.5994290","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994290","url":null,"abstract":"Theory and results demonstrate, statistically and by implication, structurally, that the zero crossings of a generalized shot noise process are equivalent to those of a modified random telegraph signal based on grouping of Poisson points. The zero crossings are not statistically consistent with a Poisson point process.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122216690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Localization and shot noise in quantum nanostructures 量子纳米结构中的局部化与散粒噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994283
M. Macucci, P. Marconcini, G. Iannaccone
{"title":"Localization and shot noise in quantum nanostructures","authors":"M. Macucci, P. Marconcini, G. Iannaccone","doi":"10.1109/ICNF.2011.5994283","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994283","url":null,"abstract":"We present an investigation with a quantum model of shot noise suppression in a series of cascaded barriers, showing that the well-known diffusive limit reported in the literature on the basis of semiclassical models can be achieved only in the presence of a mechanism leading to mode mixing, such as a magnetic field. Without mode mixing, strong localization appears, because the localization length is of the order of the mean free path. These results are consistent with existing experimental data on shot noise in superlattices.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125869985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accurately measured two-port low frequency noise and correlation of GaAs based HBTs 精确测量了GaAs基HBTs的双端口低频噪声和相关性
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994320
O. Sevimli, A. Parker, A. Fattorini, J. Harvey
{"title":"Accurately measured two-port low frequency noise and correlation of GaAs based HBTs","authors":"O. Sevimli, A. Parker, A. Fattorini, J. Harvey","doi":"10.1109/ICNF.2011.5994320","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994320","url":null,"abstract":"Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/ƒ noise with a simple non-linear transistor model was used to verify the accuracy of the method.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122385321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Cross-correlation analysis to salt-bridge dynamics in force-induced unfolding of titin kinase 力诱导的titin激酶展开过程中盐桥动力学的相关分析
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994362
Ming-Chya Wu, J. Forbes, Kuan Wang
{"title":"Cross-correlation analysis to salt-bridge dynamics in force-induced unfolding of titin kinase","authors":"Ming-Chya Wu, J. Forbes, Kuan Wang","doi":"10.1109/ICNF.2011.5994362","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994362","url":null,"abstract":"In this paper, a theoretical study on the saltbridge dynamics of titin kinase is presented. We focus on the analysis of the spatial-temporal properties of the salt-bridge time series of titin kinase in force-induced unfolding simulated by steered molecular dynamics (SMD). Salt-bridge time series are defined from the SMD trajectories. Scaling analysis reveals two characteristics of the time series in short and long time scales, suggesting there is anti-persistent behavior in short-time scale less than 50 ps, while persistent behavior dominates in long-time scale larger than 100 ps. Using cross-correlation analysis, we study the dynamics of the salt-bridges. From analyzing the eigenvectors of the cross-correlation matrix constructed by the salt-bridge data, we classify salt-bridges into distinct groups. The knowledge of the grouping is useful in identifying force-relevant structural transitions.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122386157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors 场效应和高电子迁移率晶体管中二维等离子体波高频电子噪声的抑制
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994294
H. Marinchio, C. Palermo, L. Varani, P. Shiktorov, E. Starikov, V. Gruzinskis
{"title":"Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors","authors":"H. Marinchio, C. Palermo, L. Varani, P. Shiktorov, E. Starikov, V. Gruzinskis","doi":"10.1109/ICNF.2011.5994294","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994294","url":null,"abstract":"A theoretical model based on simple hydrodynamic equations coupled with a pseudo-2D Poisson equation is used to calculate numerically and to analyze analitically electronic noise in FET/HEMT channels induced in the THz frequency range by the thermal excitation of 2D-plasma waves. The influence of ungated regions on high-frequency (HF) noise is considered. An efficient suppression of HF noise is found to take place in the case of additional ungated region placed between the gate and drain contacts.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"61 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122391118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Structure acoustic design of hull structures with integrated wave impending technique 基于集成波频技术的船体结构声学设计
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994348
Ji Fang
{"title":"Structure acoustic design of hull structures with integrated wave impending technique","authors":"Ji Fang","doi":"10.1109/ICNF.2011.5994348","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994348","url":null,"abstract":"According to impedance mismatch and wave conversion in non-homogeneous structure, the characteristics of vibration wave propagation from typical hull link structures are analyzed through wave theory. Furthermore, elastic interlayer are introduced into L-typed hull structure with blocking mass, the main factor of hull structure-borne sound can be reduced by structuring multi impedance mismatch. On this basis, the structure acousitic design of power cabin with integrated wave impeding technique is verified through numerical calculation. The results show that combination of finite scale of polyurethane elastic interlayer with rigid vibration isolation can enhance the vibration isolation performance and expand isolation frequency band, which has a high cost-effective ratio.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125035806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1/f permitivity fluctuation in fullerene C60 富勒烯C60介电常数的1/f波动
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994386
H. Akabane, E. Sato
{"title":"1/f permitivity fluctuation in fullerene C60","authors":"H. Akabane, E. Sato","doi":"10.1109/ICNF.2011.5994386","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994386","url":null,"abstract":"The electric capacity of the condenser whose inside is filled with fullerene C60 is measured using two-phase lock-in amplifier. It is found that both the real part and imaginary part of the permitivity of the fullerene shows 1/f fluctuation in the low frequency area.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127139733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defects influenced by the Jahn-Teller effect as the sources of flicker noise in GaAs based devices Jahn-Teller效应对砷化镓器件中闪烁噪声源的影响
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994293
E. Shmelev, A. V. Klyuev, A. V. Yakimov
{"title":"Defects influenced by the Jahn-Teller effect as the sources of flicker noise in GaAs based devices","authors":"E. Shmelev, A. V. Klyuev, A. V. Yakimov","doi":"10.1109/ICNF.2011.5994293","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994293","url":null,"abstract":"In order to determine the origin of 1/ƒ noise in devices made on the basis of GaAs the model of bistable defects is developed. The origin and the structure of multistable point defects (bistable in the simplest case) in GaAs are researched. It is suggested that the mechanism of spatial and charge multistability of the defects could be linked with the influence of the Jahn-Teller effect. The DX center and the complex of defects containing the vacancy VGa are analyzed as an example of multistable defects. The carried out research demonstrates that one of the possible sources of the 1/ƒ noise in GaAs based devices could be defects subjected to the Jahn-Teller effect.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128798774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Terahertz responsivity enhancement and low-frequency noise study in silicon CMOS detectors using a drain current bias 利用漏极偏置的硅CMOS探测器的太赫兹响应增强和低频噪声研究
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994326
A. Lisauskas, S. Boppel, H. Roskos, J. Matukas, V. Palenskis, L. Minkevičius, G. Valušis, P. Haring Bolívar
{"title":"Terahertz responsivity enhancement and low-frequency noise study in silicon CMOS detectors using a drain current bias","authors":"A. Lisauskas, S. Boppel, H. Roskos, J. Matukas, V. Palenskis, L. Minkevičius, G. Valušis, P. Haring Bolívar","doi":"10.1109/ICNF.2011.5994326","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994326","url":null,"abstract":"We report on the study of the enhancement of responsivity and properties of low-frequency noise in silicon 0.25 µm CMOS transistor-based detectors for terahertz radiation under applied dc source-to-drain current. We find that at signal modulation frequencies above 50 kHz the signal-to-noise ratio becomes independent from applied current, whereas the responsivity of detectors can be enhanced up to three times. We present quantitative results of noise measurements in the frequency range from 600 Hz to 1 MHz and currents up to the saturation current.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129182955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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