D. Pogany, C. Zeiner, S. Bychikhin, T. Burchhart, A. Lugstein, L. Vandamme
{"title":"锗纳米线晶体管的RTS和1/f噪声","authors":"D. Pogany, C. Zeiner, S. Bychikhin, T. Burchhart, A. Lugstein, L. Vandamme","doi":"10.1109/ICNF.2011.5994345","DOIUrl":null,"url":null,"abstract":"Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO<inf>2</inf> back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10–30% range is usually observed at drain currents below I<inf>D</inf>=1nA. For higher currents, 1/f noise becomes dominant. With the current increase, the normalized power spectral density (S<inf>I</inf>/I<inf>D</inf><sup>2</sup>) is first independent on ID and then drops as I<inf>D</inf><sup>−1</sup>. Considering dominant mobility fluctuations due to scattering on surface defects a Hooge parameter of 4×10<sup>−3</sup> has been estimated.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"RTS and 1/f noise in Ge nanowire transistors\",\"authors\":\"D. Pogany, C. Zeiner, S. Bychikhin, T. Burchhart, A. Lugstein, L. Vandamme\",\"doi\":\"10.1109/ICNF.2011.5994345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO<inf>2</inf> back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10–30% range is usually observed at drain currents below I<inf>D</inf>=1nA. For higher currents, 1/f noise becomes dominant. With the current increase, the normalized power spectral density (S<inf>I</inf>/I<inf>D</inf><sup>2</sup>) is first independent on ID and then drops as I<inf>D</inf><sup>−1</sup>. Considering dominant mobility fluctuations due to scattering on surface defects a Hooge parameter of 4×10<sup>−3</sup> has been estimated.\",\"PeriodicalId\":137085,\"journal\":{\"name\":\"2011 21st International Conference on Noise and Fluctuations\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 21st International Conference on Noise and Fluctuations\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICNF.2011.5994345\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 21st International Conference on Noise and Fluctuations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICNF.2011.5994345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO2 back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10–30% range is usually observed at drain currents below ID=1nA. For higher currents, 1/f noise becomes dominant. With the current increase, the normalized power spectral density (SI/ID2) is first independent on ID and then drops as ID−1. Considering dominant mobility fluctuations due to scattering on surface defects a Hooge parameter of 4×10−3 has been estimated.
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