{"title":"精确测量了GaAs基HBTs的双端口低频噪声和相关性","authors":"O. Sevimli, A. Parker, A. Fattorini, J. Harvey","doi":"10.1109/ICNF.2011.5994320","DOIUrl":null,"url":null,"abstract":"Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/ƒ noise with a simple non-linear transistor model was used to verify the accuracy of the method.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Accurately measured two-port low frequency noise and correlation of GaAs based HBTs\",\"authors\":\"O. Sevimli, A. Parker, A. Fattorini, J. Harvey\",\"doi\":\"10.1109/ICNF.2011.5994320\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/ƒ noise with a simple non-linear transistor model was used to verify the accuracy of the method.\",\"PeriodicalId\":137085,\"journal\":{\"name\":\"2011 21st International Conference on Noise and Fluctuations\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 21st International Conference on Noise and Fluctuations\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICNF.2011.5994320\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 21st International Conference on Noise and Fluctuations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICNF.2011.5994320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accurately measured two-port low frequency noise and correlation of GaAs based HBTs
Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/ƒ noise with a simple non-linear transistor model was used to verify the accuracy of the method.
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