A. Knápek, L. Grmela, J. Sikula, V. Holcman, A. Delong
{"title":"Noise of cold emission cathode","authors":"A. Knápek, L. Grmela, J. Sikula, V. Holcman, A. Delong","doi":"10.1109/ICNF.2011.5994390","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994390","url":null,"abstract":"The paper deals with a spectroscopic method intended for characterization of virgin oxide and resin-coated cold emission cathodes. The noise spectroscopy in time and frequency domain is based on measuring cathode's voltage noise, in ultrahigh vacuum conditions ∼ 2 · 10−5 Pa. These conditions are required in order to avoid environment interaction with ions, which are present in the vacuum chamber, and also to reduce the influence of the electron-induced desorption and adsorption, which poses one of the significant noise sources. For these experiments, cold cathode with epoxy-resin coating was prepared. A comprehensive investigation was carried out to determine particular noise sources and to compare clean cathodes with the resin-coated one, in order to describe influence of the oxide and dielectric epoxy layer on to the emission current stability. Spectra obtained, for various emission currents at different voltages, are described and explained. The results suggest that the resin-layer changes cathode performance and extends its durability.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129558368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Elhusseini, F. Martinez, J. Armand, M. Bawedin, M. Valenza, F. Pascal, R. Ritzenthaler, F. Lime, B. Iñíguez, O. Faynot
{"title":"Low frequency noise modeling of SOI MOSFETs using Green's function approach","authors":"J. Elhusseini, F. Martinez, J. Armand, M. Bawedin, M. Valenza, F. Pascal, R. Ritzenthaler, F. Lime, B. Iñíguez, O. Faynot","doi":"10.1109/ICNF.2011.5994339","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994339","url":null,"abstract":"In this paper, we present a new numerical model of the inversion charge power spectral density in FDSOI MOSFET devices with ultra thin body. Unlike previous classical models, we don't use the equivalent concept which relates the fluctuation of the oxide charge to the flat-band voltage fluctuation. Localized noise sources in the oxide are implanted into the model and by using a Green's function approach, the spectral cross-correlation of the electrical potential is evaluated at each node in the device mesh in order to obtain a highly accurate physical description. In this paper, we evaluate the validity of the classical model. In view of this, we have compared simulation results to those of the classical formulation and to experimental data. A good agreement with measurements is obtained with the proposed model. The results show that the noise behavior in FDSOI MOSFETs is strongly related to the front and buried oxides defects, even if the channel is located at the front interface. In other words the classical formulation of the flat-band voltage PSD overestimate the front oxide trap density and no more holds true in SOI MOSFETs LFN characterization.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129695156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes","authors":"A. Szewczyk, J. Cichosz","doi":"10.1109/ICNF.2011.5994365","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994365","url":null,"abstract":"In the paper authors present results of random telegraph signal (RTS) phenomena observation in reverse polarized Schottky diodes. Devices being studied are commercially available SiC Schottky diodes with reverse voltage UR = 600 V.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115600553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Suppression of thermal fluctuations of nanomechanical resonator (ground state cooling) by thermally activated electronic flow. Leonid Gorelik Department of Applied Physics Chalmers University of Technology Gothenburg, Sweden","authors":"L. Gorelik, F. Santandrea, R. Shekhter, M. Jonson","doi":"10.1109/ICNF.2011.5994306","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994306","url":null,"abstract":"We consider a doubly clamped suspended metallic carbon nanotube in which extra charge is injected from the tipof a scanning tunneling microscopy (STM). Our analysis shows that the quantum superposition between the different inelastic electronic tunneling paths can be controlled by the bias voltage. In particular, we find that below Coulomb blockade threshold the vibron emission induced by thermally activated electron transportation can be significantly reduced in comparison to the vibron absorption. As a consequence a net suppression of the thermal fluctuations (“cooling”) of the vibrational degrees of freedom can be achieved.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124151169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Correlation of acoustic emission, light fluctuations surface and three-dimensional distribution EL intensity in InGaN/GaN structures","authors":"Maxim Kisseluk, O. Vlasenko, O. Lyashenko","doi":"10.1109/ICNF.2011.5994354","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994354","url":null,"abstract":"It is shown that the probable mechanism of fluctuations of surface and three-dimensional EL intensity distribution of light-emitting heterostructure is occurrence and burning-off of local pipes in areas, which because of the nonuniform distribution of indium in InxGa1−xN solid solution and influences of dislocation system have greater conductance","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115356298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Flicker noise due to variable range hopping in organic thin-film transistors","authors":"O. Marinov, M. Deen","doi":"10.1109/ICNF.2011.5994323","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994323","url":null,"abstract":"In this paper, we introduce our work on the use of the variable range hopping to determine flicker noise in organic thin film transistors (OTFTs). We implemented the principal physical models for variable range hopping in a numerical simulator to determine the charge transport in OTFTs. These transport calculations yield a distribution of the charge hopping time which is used to calculate the flicker noise in OTFTs. The calculations are compared to experimental data and good agreement between experiments and simulation were obtained. This indicates that variable range hopping can be the origin of the 1/f noise in OTFT in conjunction with the variable mobility in these devices.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115489191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Noise in graphene and carbon nanotube devices","authors":"G. Iannaccone, A. Betti, G. Fiori","doi":"10.1109/ICNF.2011.5994343","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994343","url":null,"abstract":"We discuss the shot noise properties of carbon-based transistors in which the channel is laterally confined, either in the form of graphene nanoribbons or of carbon nanotubes. We show with an simple compact model and with computationally-intensive statistical simulations that electron-electron interaction can lead to a significant suppression of shot noise, often overlooked when the device is described with the Landauer-Buttiker formalism. Finally, we show that interband tunneling can play a significant role in enhancing shot noise due to exchange of holes between drain and channel, that is a peculiar effect observable in the case of channel materials with very small energy gaps.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115892109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"First return time probability in correlated stationary signals","authors":"L. Palatella, C. Pennetta","doi":"10.1109/ICNF.2011.5994296","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994296","url":null,"abstract":"We study the distribution of first return times at a given level L in stationary correlated signals. Our approach makes use of the relation between the characteristic function of the first return probability density function (PDF) and the occupation probability of the state L. In this work we consider a discrete in time and space Ornstein-Uhlenbeck (OU) process with exponential decaying correlation function and then, by a subordination approach, we treat the case of a process with power-law tail correlation function and diverging correlation time. In the first case, by inverting the Laplace transforms we write down an exact analytical expression for the first return time PDF as a function of the level L, while in the second case we obtain the expressions for the first two asymptotic behaviors. In both cases no simple form of the return time statistics like stretched-exponential is obtained.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128143282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ghost stochastic resonance in the model of neural auditory system","authors":"Y. Ushakov, E. S. Karandasov, A. Dubkov","doi":"10.1109/ICNF.2011.5994378","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994378","url":null,"abstract":"The ghost stochastic resonance effect is investigated in the model of noisy neural ensemble of the auditory system. For commensurable frequencies of sinusoidal signals at the input of the system we studied probabilistic characteristics of the output signal for various noise intensities.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114644809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Bohmian formulation of Full Counting Statistics in mesoscopic systems","authors":"G. Albareda, Fabio L. Traversa, X. Oriols","doi":"10.1109/ICNF.2011.5994313","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994313","url":null,"abstract":"Predicting time-dependent current correlations in mesoscopic systems represents a challenge to theorists because it requires the ability to reproduce sequential measurements, i.e. unitary (Schrödinger-like) and non-unitary (collapse-like) evolutions of the quantum systems. On the contrary, Bohmian formulation of quantum theory, in terms of quantum trajectories guided by waves, by construction, exactly reproduces all quantum phenomena (even correlations) without needing to invoke the role of the operators in the system's measurement. Here, by simply highlighting the operatorless character of Bohmian mechanics, we show that the conceptual difficulties associated to sequential measurements, when electron transport is formulated within the orthodox quantum mechanics, can be substituted by a practical difficulty in the reduction of the degrees of freedom associated to open mesoscopic systems, when the problem is formulated within Bohmian mechanics.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116780571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}