Noise in graphene and carbon nanotube devices

Abstract

We discuss the shot noise properties of carbon-based transistors in which the channel is laterally confined, either in the form of graphene nanoribbons or of carbon nanotubes. We show with an simple compact model and with computationally-intensive statistical simulations that electron-electron interaction can lead to a significant suppression of shot noise, often overlooked when the device is described with the Landauer-Buttiker formalism. Finally, we show that interband tunneling can play a significant role in enhancing shot noise due to exchange of holes between drain and channel, that is a peculiar effect observable in the case of channel materials with very small energy gaps.