Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI:10.1109/ICNF.2011.5994365

A. Szewczyk, J. Cichosz

引用次数: 0

Abstract

In the paper authors present results of random telegraph signal (RTS) phenomena observation in reverse polarized Schottky diodes. Devices being studied are commercially available SiC Schottky diodes with reverse voltage UR = 600 V.

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反向极化碳化硅肖特基二极管中随机电报信号的观察

本文介绍了反极化肖特基二极管中随机电报信号(RTS)现象的观测结果。所研究的器件是市售的反向电压UR = 600 V的SiC肖特基二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 21st International Conference on Noise and Fluctuations

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