InGaN/GaN结构中声发射、光波动面与三维EL强度分布的相关性

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI:10.1109/ICNF.2011.5994354

Maxim Kisseluk, O. Vlasenko, O. Lyashenko

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引用次数: 0

摘要

结果表明，发光异质结构表面和三维发光强度分布波动的可能机制是局部管道的发生和燃烧，这是由于铟在InxGa1−xN固溶体中的不均匀分布和位错体系的影响而产生较大的电导

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Correlation of acoustic emission, light fluctuations surface and three-dimensional distribution EL intensity in InGaN/GaN structures

It is shown that the probable mechanism of fluctuations of surface and three-dimensional EL intensity distribution of light-emitting heterostructure is occurrence and burning-off of local pipes in areas, which because of the nonuniform distribution of indium in InxGa1−xN solid solution and influences of dislocation system have greater conductance

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2011 21st International Conference on Noise and Fluctuations

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