{"title":"反向极化碳化硅肖特基二极管中随机电报信号的观察","authors":"A. Szewczyk, J. Cichosz","doi":"10.1109/ICNF.2011.5994365","DOIUrl":null,"url":null,"abstract":"In the paper authors present results of random telegraph signal (RTS) phenomena observation in reverse polarized Schottky diodes. Devices being studied are commercially available SiC Schottky diodes with reverse voltage UR = 600 V.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes\",\"authors\":\"A. Szewczyk, J. Cichosz\",\"doi\":\"10.1109/ICNF.2011.5994365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the paper authors present results of random telegraph signal (RTS) phenomena observation in reverse polarized Schottky diodes. Devices being studied are commercially available SiC Schottky diodes with reverse voltage UR = 600 V.\",\"PeriodicalId\":137085,\"journal\":{\"name\":\"2011 21st International Conference on Noise and Fluctuations\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 21st International Conference on Noise and Fluctuations\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICNF.2011.5994365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 21st International Conference on Noise and Fluctuations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICNF.2011.5994365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes
In the paper authors present results of random telegraph signal (RTS) phenomena observation in reverse polarized Schottky diodes. Devices being studied are commercially available SiC Schottky diodes with reverse voltage UR = 600 V.
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