{"title":"掺硅三角肖特基二极管中1/f噪声的来源","authors":"A. V. Klyuev, E. Shmelev, A. V. Yakimov","doi":"10.1109/ICNF.2011.5994273","DOIUrl":null,"url":null,"abstract":"The model of Schottky diode with δ-doping is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Ileak are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs - model) and model of 1/f noise in leakage current are suggested. The analysis of the 1/f noise spectrum allows assuming that, in investigated diodes, on 106 atoms of main impurity there are 1–10 atoms of extraneous impurity the ionization energy of which may stochastically be modulated.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Sources of 1/f noise in Si delta-doped Schottky diodes\",\"authors\":\"A. V. Klyuev, E. Shmelev, A. V. Yakimov\",\"doi\":\"10.1109/ICNF.2011.5994273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The model of Schottky diode with δ-doping is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Ileak are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs - model) and model of 1/f noise in leakage current are suggested. The analysis of the 1/f noise spectrum allows assuming that, in investigated diodes, on 106 atoms of main impurity there are 1–10 atoms of extraneous impurity the ionization energy of which may stochastically be modulated.\",\"PeriodicalId\":137085,\"journal\":{\"name\":\"2011 21st International Conference on Noise and Fluctuations\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 21st International Conference on Noise and Fluctuations\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICNF.2011.5994273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 21st International Conference on Noise and Fluctuations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICNF.2011.5994273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sources of 1/f noise in Si delta-doped Schottky diodes
The model of Schottky diode with δ-doping is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Ileak are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs - model) and model of 1/f noise in leakage current are suggested. The analysis of the 1/f noise spectrum allows assuming that, in investigated diodes, on 106 atoms of main impurity there are 1–10 atoms of extraneous impurity the ionization energy of which may stochastically be modulated.
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