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2011 21st International Conference on Noise and Fluctuations最新文献

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Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors 先进0.13µm BiCMOS SiGe:C异质结双极晶体管1/f噪声的改善
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994321
F. Pascal, J. Raoult, B. Sagnes, A. Hoffmann, S. Haendler, G. Morin
{"title":"Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors","authors":"F. Pascal, J. Raoult, B. Sagnes, A. Hoffmann, S. Haendler, G. Morin","doi":"10.1109/ICNF.2011.5994321","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994321","url":null,"abstract":"In this study, we present recent low frequency noise results obtained on Si/SiGe:C Heterojunction Bipolar Transistors (HBTs) associated with a 0.13 µm BiCMOS technology. The HBTs are supplied by STMicroelectronics Crolles and present unity current gain frequencies (fT) and maximum oscillation frequencies (fmax) in the 250s of GHz.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132125411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs 非基频低频噪声理论:AlGaN/GaN hfet的漏极噪声-电流建模
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994305
F. Manouchehri, P. Valizadeh, M. Z. Kabir
{"title":"Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs","authors":"F. Manouchehri, P. Valizadeh, M. Z. Kabir","doi":"10.1109/ICNF.2011.5994305","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994305","url":null,"abstract":"This work presents a theoretical study on the 1/ƒ low frequency noise (LFN) based on the fluctuations in the number of carriers in the two-dimensional electron gas (2DEG) channel of AlGaN/GaN self-aligned HFETs. This study validates the role of thermally activated trap levels on 1/ƒ LFN characteristics. Simulation results confirm that the low frequency noise behavior follows characteristic of 1/ƒ γ with frequency exponent β between 0 and 2. At room temperature the simulation results are compared with the experiments. The effect of temperature is also studied on the noise behavior. It is found that the frequency exponent can vary with temperature.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132214408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication 用于光子仪器和通信的雪崩光电二极管(AlInAs/GaInAs/InP)的光电1/f噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994330
S. Ouarets, B. Orsal, M. Lahrichi, M. Achouche
{"title":"Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication","authors":"S. Ouarets, B. Orsal, M. Lahrichi, M. Achouche","doi":"10.1109/ICNF.2011.5994330","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994330","url":null,"abstract":"We show for the first time, the results concerning low frequency noise (1HZ–10KHz) of Avalanche Photodiodes (APDs) AlInAs/GaInAs/InP manufactured on Indium Phosphide Substrate (InP). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation in the power. This specific behavior is explained taking into account the physical properties of APDs.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134645688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Noise characteristics and radiation spectra of multimode MQW laser diodes during mode-hopping effect 多模MQW激光二极管在跳模效应下的噪声特性和辐射光谱
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994327
S. Pralgauskaitė, V. Palenskis, B. Saulys, J. Matukas, V. Kornijcuk, S. Smetona
{"title":"Noise characteristics and radiation spectra of multimode MQW laser diodes during mode-hopping effect","authors":"S. Pralgauskaitė, V. Palenskis, B. Saulys, J. Matukas, V. Kornijcuk, S. Smetona","doi":"10.1109/ICNF.2011.5994327","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994327","url":null,"abstract":"Comprehensive investigation of noise (optical and electrical fluctuations and cross-correlation factor between them) and radiation spectrum characteristics have been carried out for InGaAsP/InP Fabry-Perot (FP) multiple quantum well laser diodes (LDs). Mode-hopping occurs at particular operation conditions (injection current and temperature) in FP LD operation. LD radiation spectrum is outspread and intensive highly correlated optical and electrical fluctuations are observed during mode-hopping. Physical processes during mode-hopping have 1 µs - 1 ms characteristic times and are caused by generation-recombination and carrier capture processes in centers formed by defects in barrier layer.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125598336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A rigorous analysis of oscillator noise including orbital fluctuations 包括轨道波动在内的振荡器噪声的严格分析
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994308
F. Traversa, F. Bonani
{"title":"A rigorous analysis of oscillator noise including orbital fluctuations","authors":"F. Traversa, F. Bonani","doi":"10.1109/ICNF.2011.5994308","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994308","url":null,"abstract":"We discuss recent results leading to a full statistical characterization of the noise spectrum of a free running oscillator perturbed by white Gaussian noise sources, including the effect of orbital fluctuations and of their correlation with phase noise. This extends a previous theory based on the Floquet decomposition of the linearized oscillator equations originally applied to phase fluctuations only.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132449142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of effectiveness of gas sensing by low frequency fluctuations in resistance and microbalance quartz gas sensors 电阻低频波动气敏与微天平石英气敏的效果比较
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994318
L. Hasse, M. Kotarski, J. Smulko, J. Majzner, V. Sedlakova, P. Sedlák, J. Sikula
{"title":"Comparison of effectiveness of gas sensing by low frequency fluctuations in resistance and microbalance quartz gas sensors","authors":"L. Hasse, M. Kotarski, J. Smulko, J. Majzner, V. Sedlakova, P. Sedlák, J. Sikula","doi":"10.1109/ICNF.2011.5994318","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994318","url":null,"abstract":"Selectivity and sensitivity of gas sensing can be improved by fluctuation enhanced sensing. This possibility was investigated in resistive Taguchi Gas Sensors (TGS). Research results confirm that such an approach can strongly increase gas detection sensitivity. We suppose that low frequency fluctuations can be utilized to improve gas detection in other types of gas sensors. Fluctuations in the Quartz Crystal Microbalance (QCM) gas sensor for gas detection improving have been investigated. The sensor used in an experiment utilizes an ordinary quartz oscillator with a surface covered by a chemical layer absorbing humidity. The paper presents results of 1/ƒ noise measurements in both types of sensors at different humidity. The prototype QCM sensor and resistive gas sensors of Figaro company were investigated. The results show advantages of this technique for future industrial applications.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116145094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A sampling frequency and observation time analysis for efficient stochastic resonance in digital signal processing 数字信号处理中有效随机共振的采样频率和观测时间分析
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994292
Y. Tadokoro, A. Ichiki, M. Takanashi
{"title":"A sampling frequency and observation time analysis for efficient stochastic resonance in digital signal processing","authors":"Y. Tadokoro, A. Ichiki, M. Takanashi","doi":"10.1109/ICNF.2011.5994292","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994292","url":null,"abstract":"The noise-related phenomenon, stochastic resonance (SR), may improve the performance of signal detection devices. In digital signal processing, the effect of SR depends on the observation time and sampling frequency. To apply it to digital signal processing, these two parameters must be determined. This paper investigates the observation time and sampling frequency for efficient SR in a digital system.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"439 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126131951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Noise and Terahertz rectification in semiconductor diodes and transistors 半导体二极管和晶体管中的噪声和太赫兹整流
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994291
J. Mateos, I. Íñiguez-de-la-Torre, T. González
{"title":"Noise and Terahertz rectification in semiconductor diodes and transistors","authors":"J. Mateos, I. Íñiguez-de-la-Torre, T. González","doi":"10.1109/ICNF.2011.5994291","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994291","url":null,"abstract":"In this work we explore high frequency collective phenomena present in classic HEMTs and in asymmetric nanodiodes, so called self-switching diodes (SSDs), that leads to a peak in the current noise spectrum which enhances the DC response of the devices, thus originating a THz resonance in the rectification of AC signals. These mechanisms have been evidenced in recent experiments made with HEMTs, in which THz detection as a result of plasma wave resonances has been demonstrated. In this paper, the noise spectra of the devices have been obtained by means of Monte Carlo simulations self-consistently coupled to a Poisson solver, able to provide not only static results but also the effect of collective phenomena such as plasma oscillations.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127391300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of low-frequency noise in organic field-effect transistors combining static and noise data 结合静态和噪声数据分析有机场效应晶体管的低频噪声
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994384
Y. Xu, F. Balestra, J. Chroboczek, G. Ghibaudo, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard
{"title":"Analysis of low-frequency noise in organic field-effect transistors combining static and noise data","authors":"Y. Xu, F. Balestra, J. Chroboczek, G. Ghibaudo, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard","doi":"10.1109/ICNF.2011.5994384","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994384","url":null,"abstract":"A study of electrical properties of organic transistors combining static and noise data is presented. The DC data provide key parameters, such as mobility, contact resistance and the surface state density. The low-frequency noise analysis proves that the features observed in DC measurements, e.g. higher trap density, reflect poor crystal quality and thus are responsible for lower mobility and higher contact resistance. The mobility and contact resistance data provide a deep insight into the origin of the contact noise in organic transistors.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114415466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Harmonic oscillator with non-Gaussian frequency fluctuations 具有非高斯频率波动的谐振子
2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI: 10.1109/ICNF.2011.5994369
A. Dubkov
{"title":"Harmonic oscillator with non-Gaussian frequency fluctuations","authors":"A. Dubkov","doi":"10.1109/ICNF.2011.5994369","DOIUrl":"https://doi.org/10.1109/ICNF.2011.5994369","url":null,"abstract":"The moment and probability characteristics of harmonic oscillator with white non-Gaussian frequency fluctuations are investigated. Using a functional approach we derive the integro-differential Kolmogorov equation for the joint probability density function of oscillator coordinate and velocity. Since it is difficult to find a solution of this equation in the steady state the set of equations for joint moments and the hypothesis of time-reversal symmetry which is valid for zero friction are applied. For the case of small friction we obtain the approximate probability distributions of oscillator coordinate and velocity which transform into exact stable Cauchy distributions in the limit of zero friction.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114437253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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