先进0.13µm BiCMOS SiGe:C异质结双极晶体管1/f噪声的改善

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI:10.1109/ICNF.2011.5994321

F. Pascal, J. Raoult, B. Sagnes, A. Hoffmann, S. Haendler, G. Morin

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引用次数: 9

摘要

在这项研究中，我们展示了最近在Si/SiGe:C异质结双极晶体管(HBTs)上获得的与0.13 μ m BiCMOS技术相关的低频噪声结果。hbt由意法半导体公司(STMicroelectronics Crolles)提供，其单位电流增益频率(fT)和最大振荡频率(fmax)为250 GHz。

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Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors

In this study, we present recent low frequency noise results obtained on Si/SiGe:C Heterojunction Bipolar Transistors (HBTs) associated with a 0.13 µm BiCMOS technology. The HBTs are supplied by STMicroelectronics Crolles and present unity current gain frequencies (fT) and maximum oscillation frequencies (fmax) in the 250s of GHz.

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2011 21st International Conference on Noise and Fluctuations

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