S. Pralgauskaitė, V. Palenskis, B. Saulys, J. Matukas, V. Kornijcuk, S. Smetona
{"title":"Noise characteristics and radiation spectra of multimode MQW laser diodes during mode-hopping effect","authors":"S. Pralgauskaitė, V. Palenskis, B. Saulys, J. Matukas, V. Kornijcuk, S. Smetona","doi":"10.1109/ICNF.2011.5994327","DOIUrl":null,"url":null,"abstract":"Comprehensive investigation of noise (optical and electrical fluctuations and cross-correlation factor between them) and radiation spectrum characteristics have been carried out for InGaAsP/InP Fabry-Perot (FP) multiple quantum well laser diodes (LDs). Mode-hopping occurs at particular operation conditions (injection current and temperature) in FP LD operation. LD radiation spectrum is outspread and intensive highly correlated optical and electrical fluctuations are observed during mode-hopping. Physical processes during mode-hopping have 1 µs - 1 ms characteristic times and are caused by generation-recombination and carrier capture processes in centers formed by defects in barrier layer.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 21st International Conference on Noise and Fluctuations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICNF.2011.5994327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Comprehensive investigation of noise (optical and electrical fluctuations and cross-correlation factor between them) and radiation spectrum characteristics have been carried out for InGaAsP/InP Fabry-Perot (FP) multiple quantum well laser diodes (LDs). Mode-hopping occurs at particular operation conditions (injection current and temperature) in FP LD operation. LD radiation spectrum is outspread and intensive highly correlated optical and electrical fluctuations are observed during mode-hopping. Physical processes during mode-hopping have 1 µs - 1 ms characteristic times and are caused by generation-recombination and carrier capture processes in centers formed by defects in barrier layer.