Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI:10.1109/ICNF.2011.5994330

S. Ouarets, B. Orsal, M. Lahrichi, M. Achouche

引用次数: 2

Abstract

We show for the first time, the results concerning low frequency noise (1HZ–10KHz) of Avalanche Photodiodes (APDs) AlInAs/GaInAs/InP manufactured on Indium Phosphide Substrate (InP). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation in the power. This specific behavior is explained taking into account the physical properties of APDs.

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用于光子仪器和通信的雪崩光电二极管(AlInAs/GaInAs/InP)的光电1/f噪声

我们首次展示了在磷化铟衬底(InP)上制造的雪崩光电二极管(APDs) AlInAs/GaInAs/InP的低频噪声(1HZ-10KHz)的结果。1/f和乘法噪声作为乘法系数的函数而增加，其功率变化相同。考虑到apd的物理性质，可以解释这种特殊行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 21st International Conference on Noise and Fluctuations

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