半导体二极管和晶体管中的噪声和太赫兹整流

J. Mateos, I. Íñiguez-de-la-Torre, T. González
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引用次数: 1

摘要

在这项工作中,我们探索了经典hemt和非对称纳米二极管(即所谓的自开关二极管(ssd))中存在的高频集体现象,这种现象会导致电流噪声谱中的峰值,从而增强器件的直流响应,从而在交流信号的整流中产生太赫兹谐振。这些机制已经在最近的hemt实验中得到了证明,在实验中,等离子体波共振导致的太赫兹探测已经得到证实。本文采用蒙特卡罗模拟与泊松解耦自一致耦合的方法获得了器件的噪声谱,不仅可以提供静态结果,还可以提供等离子体振荡等集体现象的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Noise and Terahertz rectification in semiconductor diodes and transistors
In this work we explore high frequency collective phenomena present in classic HEMTs and in asymmetric nanodiodes, so called self-switching diodes (SSDs), that leads to a peak in the current noise spectrum which enhances the DC response of the devices, thus originating a THz resonance in the rectification of AC signals. These mechanisms have been evidenced in recent experiments made with HEMTs, in which THz detection as a result of plasma wave resonances has been demonstrated. In this paper, the noise spectra of the devices have been obtained by means of Monte Carlo simulations self-consistently coupled to a Poisson solver, able to provide not only static results but also the effect of collective phenomena such as plasma oscillations.
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