{"title":"三栅n通道体finfet的低频噪声","authors":"E. Simoen, M. Aoulaiche, N. Collaert, C. Claeys","doi":"10.1109/ICNF.2011.5994280","DOIUrl":null,"url":null,"abstract":"The noise in n-channel bulk MuGFETs with 2.5 nm SiON gate dielectric is reported. It is shown that besides number fluctuations-related 1/f noise often Generation-Recombination (GR) noise is observed. From a detailed study of the fin length and width dependence it is concluded that the GR noise preferentially occurs for short and wide transistors. The latter observation points to traps in the gate oxide edges as a possible source of the excess noise.","PeriodicalId":137085,"journal":{"name":"2011 21st International Conference on Noise and Fluctuations","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Low-frequency noise in triple-gate n-channel bulk FinFETs\",\"authors\":\"E. Simoen, M. Aoulaiche, N. Collaert, C. Claeys\",\"doi\":\"10.1109/ICNF.2011.5994280\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The noise in n-channel bulk MuGFETs with 2.5 nm SiON gate dielectric is reported. It is shown that besides number fluctuations-related 1/f noise often Generation-Recombination (GR) noise is observed. From a detailed study of the fin length and width dependence it is concluded that the GR noise preferentially occurs for short and wide transistors. The latter observation points to traps in the gate oxide edges as a possible source of the excess noise.\",\"PeriodicalId\":137085,\"journal\":{\"name\":\"2011 21st International Conference on Noise and Fluctuations\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 21st International Conference on Noise and Fluctuations\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICNF.2011.5994280\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 21st International Conference on Noise and Fluctuations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICNF.2011.5994280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-frequency noise in triple-gate n-channel bulk FinFETs
The noise in n-channel bulk MuGFETs with 2.5 nm SiON gate dielectric is reported. It is shown that besides number fluctuations-related 1/f noise often Generation-Recombination (GR) noise is observed. From a detailed study of the fin length and width dependence it is concluded that the GR noise preferentially occurs for short and wide transistors. The latter observation points to traps in the gate oxide edges as a possible source of the excess noise.
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