可制造碳纳米管晶体管中的高频噪声

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI:10.1109/ICNF.2011.5994346

P. Sakalas, M. Schroter, M. Bolter, M. Claus, S. Mothes, D. Wang

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引用次数: 14

摘要

本文首次对晶圆级可制造cntfet的高频噪声参数进行了测量和建模。这些第一批多管多指cntfet的最小噪声系数仍然相对较高(1 GHz时NFmin = 3.5 dB)。基于详细的紧凑模型，这种噪声的来源可以解释为寄生网络和金属管的存在。

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High frequency noise in manufacturable carbon nanotube transistors

HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable CNTFETs. These first multi-tube multi-finger CNTFETs exhibit still relatively high values for the minimum noise figure (NFmin = 3.5 dB at 1 GHz). Based on detailed compact modeling, the origin of this noise can be explained by the existence of the parasitic network and metallic tubes.

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2011 21st International Conference on Noise and Fluctuations

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