毫米波和亚毫米波应用中GaAs和GaN肖特基二极管的噪声特性比较

2011 21st International Conference on Noise and Fluctuations Pub Date : 2011-06-12 DOI:10.1109/ICNF.2011.5994274

D. Pardo, S. Pérez, J. Grajal, J. Mateos, T. González

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摘要

本文对GaAs和GaN肖特基势垒二极管在静态和时变条件下的噪声谱进行了蒙特卡罗(MC)分析。特别注意了噪声谱与二极管结构、温度和工作条件的关系。采用已发表的sbd噪声分析模型对MC模拟结果进行了验证。

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Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications

A Monte Carlo (MC) analysis of the noise spectra of GaAs and GaN Schottky barrier diodes (SBDs) operating under static and time varying conditions is carry out in this paper. Especial attention is payed to the dependence of the noise spectra with the structure of the diode, temperature and working conditions. Published noise analytical models of SBDs are employed to verify the results obtained from MC simulations.

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2011 21st International Conference on Noise and Fluctuations

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