Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors

Abstract

We report results of noise spectroscopy of field-effect transistors (FETs) fabricated based on individual carbon nanotube (CNT) using back-gate topography. The registered noise spectra allow us to estimate the numbers of carriers in working point with maximal transconductance. Lorentzian-shape noise components were analyzed in wide temperature range. The analysis enables us to find the energy, position and concentration of traps in the CNT-FET structures.