Low-frequency noise in triple-gate n-channel bulk FinFETs

Abstract

The noise in n-channel bulk MuGFETs with 2.5 nm SiON gate dielectric is reported. It is shown that besides number fluctuations-related 1/f noise often Generation-Recombination (GR) noise is observed. From a detailed study of the fin length and width dependence it is concluded that the GR noise preferentially occurs for short and wide transistors. The latter observation points to traps in the gate oxide edges as a possible source of the excess noise.