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2020 21st International Conference on Electronic Packaging Technology (ICEPT)最新文献

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Robust Cu microcone-array supported silicon film with superb cycling stability for negative electrode of lithium battery 具有良好循环稳定性的铜微锥阵列支撑硅膜用于锂电池负极
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202964
Ning Wang, T. Hang, Ming Li
{"title":"Robust Cu microcone-array supported silicon film with superb cycling stability for negative electrode of lithium battery","authors":"Ning Wang, T. Hang, Ming Li","doi":"10.1109/ICEPT50128.2020.9202964","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202964","url":null,"abstract":"We report a Si anode sputter deposited on a Cu microcone-array (MCA) current collector, fabricated by a facile one-step electroless deposition process, for the application in negative electrode of lithium ion batteries (LIBs) with outstanding electrochemical performance. The vacancy between Cu microcones allow effective relief of the strain induced by the volume change of active materials during lithiation, as well as a facile Li+ transport. After 2800 cycles, LIBs based on this novel 3D MCA structure demonstrate a high reversible capacity of 1213 mAh g-1, as well as almost 100 % coulombic efficiency (CE), while super-high rate performance of 1011 mAh g-1 was obtained at 16.5 C.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133367243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling Analysis of RF Interconnection Technology Using ACF 基于ACF的射频互连技术建模分析
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202482
Yingfei Lv, Hui Xiao, Min Zhang, Le Dong, Tao Chen
{"title":"Modeling Analysis of RF Interconnection Technology Using ACF","authors":"Yingfei Lv, Hui Xiao, Min Zhang, Le Dong, Tao Chen","doi":"10.1109/ICEPT50128.2020.9202482","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202482","url":null,"abstract":"Anisotropic conductive film (ACF) is inserted within a transmission line between a ball grid array (BGA) packaging device and the attaching printed circuit board (PCB) to realize the temporary high density electrical interconnection. The ACF consists of metal wires and resin. Interconnect system constructed by Device-ACF-PCB was modeled in HFSS software. Several factors including film placing position, film thickness, diameter of conductive wire, wire inclination angle and dielectric constant of resin were evaluated by discussing their influences on electrical performance of interconnection with frequency up to 40 GHz.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133270276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated Power Chip Carrier Based on High Silicon Aluminum Alloy and its Application 基于高硅铝合金的集成功率芯片载体及其应用
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202922
Mifeng Liu, Lei Ding, X. Cao, Tao Chen, Liang Zhang, Lichun Wang
{"title":"Integrated Power Chip Carrier Based on High Silicon Aluminum Alloy and its Application","authors":"Mifeng Liu, Lei Ding, X. Cao, Tao Chen, Liang Zhang, Lichun Wang","doi":"10.1109/ICEPT50128.2020.9202922","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202922","url":null,"abstract":"A new integrated power chip carrier based on high silicon aluminum alloy for high power microwave module is proposed. The film capacitance, RDL and eutectic layer are formed on the surface of high silicon aluminum alloy substrate by the fabrication process which includes flatten, magnetron sputtering, anodizing, lithography, electroplating, and etching. The whole substrate is divided into a single integrated power chip carrier by dicing technology after metallization process on the back of substrate. The capacitances value of the film capacitance is about 7 μf/mm2, and the resistance of RDL is less than 0.15 Ω/mm. The GaAs power chip is eutectic bonded to the integrated power chip carrier, and the chip carrier is assembled into a double channel microwave module by solder welding. Then the GaAs chip, film capacitance and RDL are electrical interlinked by using Au wire bonding to complete the preparation of the microwave module. The peak power and output harmonic of channel 1# of microwave module are 9.7 W and -47.97 dBc, and the peak power and output harmonic of channel 2# of microwave module are 10.6 W and -48.51 dBc.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132690325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Preparation of SiC Preform for Electronic Packaging Material 电子封装材料SiC预制体的制备研究
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202555
Mengqin Chen, Y. Bai, Zhifeng Zhang, Hansen Zheng, Zhuoran Zhang
{"title":"Study on Preparation of SiC Preform for Electronic Packaging Material","authors":"Mengqin Chen, Y. Bai, Zhifeng Zhang, Hansen Zheng, Zhuoran Zhang","doi":"10.1109/ICEPT50128.2020.9202555","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202555","url":null,"abstract":"In this paper, the porous SiC preforms•were prepared by compression molding and sintering with SiC particles of 100μm and 12μm, NH<inf>4</inf>HCO<inf>3</inf> as pore-forming agent and NH<inf>4</inf>H<inf>2</inf>PO<inf>4</inf> as binder. The NH<inf>4</inf>HCO<inf>3</inf> is an excellent pore forming agent because of its no residual impurities. The pore-forming mechanism of NH<inf>4</inf>HCO<inf>3</inf> were studied, it shows that NH<inf>4</inf>HCO<inf>3</inf> decomposes at high temperature and forms pores at corresponding positions. In a certain range, with the increase of NH<inf>4</inf>HCO<inf>3</inf> content, the number of pores in the preform increases and the pore connectivity becomes better. Through the study of the volume ratio of coarse and fine SiC particles, it shows that the volume fraction of preform can be effectively adjusted by changing the ratio of 100μm and 12μm SiC. Additionally, this work verified the feasibility of ultrasonic cleaning SiC process and preform thermal debinding and sintering process. It shows that the preform with ideal appearance, porosity and strength can be well prepared by controlling these process parameters.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132700034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Wideband and Low Loss Millimeter-wave MMIC Packaging Based on HTCC Technology 基于HTCC技术的宽带低损耗毫米波MMIC封装
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202501
Yangfan Zhou, Lin-jie Liu, Zhizhuang Qiao, Ke Wang, Ling Gao
{"title":"A Wideband and Low Loss Millimeter-wave MMIC Packaging Based on HTCC Technology","authors":"Yangfan Zhou, Lin-jie Liu, Zhizhuang Qiao, Ke Wang, Ling Gao","doi":"10.1109/ICEPT50128.2020.9202501","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202501","url":null,"abstract":"According to the coplanar waveguide, an interconnection and packaging solution for millimeter-wave monolithic microwave integrated circuit (MMIC) is designed based on high-temperature co-fired ceramic (HTCC) technology. By optimizing the transmission structure model with HFSS software, the designed structure has extraordinarily low return loss, insertion loss and wide bandwidth. This packaging concept has been measured up to the Ka band. The package samples are manufactured based on multilayer high-temperature co-fired ceramic process. The package samples are measured by vector network analyzer, 500μm pitch air coplanar probes and matching fixture. After considering the influence of test substrate and bonding wire, the measured return loss and insertion loss are consistent with simulation result. Over a wide frequency range from DC up to 40 GHz, the insertion loss is better than 1.2 dB and the return loss is better than 13 dB.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128840496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Segmented Mach-Zehnder Modulator for High-level PAM Generation 用于高级PAM生成的分段Mach-Zehnder调制器
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202646
Ying Chen, Fengman Liu, Juan Wei, Jun Li, H. Xue, Yu Sun
{"title":"Segmented Mach-Zehnder Modulator for High-level PAM Generation","authors":"Ying Chen, Fengman Liu, Juan Wei, Jun Li, H. Xue, Yu Sun","doi":"10.1109/ICEPT50128.2020.9202646","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202646","url":null,"abstract":"In this paper, a simulation link is established with proposed electric-optical modulator models. Optical modulation amplitude (OMA) and bit error rate (BER) of these modulators are studied in combination with a simulation link with a transmission rate of 60 Gbps. In the simulation, the total lengths of a single arm of these modulators is 3750 um, and the peak-to-peak voltage (VPP) of each input electrical signal is controlled at 2 V, and the input optical power of the laser is set at 20 mW. The results show that with the increasing level of pulse amplitude modulation (PAM), the higher BER appears while OMA is insensitive to the change of level of pulse amplitude modulation. And when PAM-16 is implemented, relatively clear eye diagram is still obtained. It proves that the application prospect of this modulator is in higher level pulse amplitude modulation, such as PAM-8 and PAM-16. Therefore, SEMZM is a good choice for high speed data transmission.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128856742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
3D composite photonic interposer integrated with low-cost silicon nitride optical interconnects 集成低成本氮化硅光互连的三维复合光子中介器
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202997
Ziji Wang, J. Shang
{"title":"3D composite photonic interposer integrated with low-cost silicon nitride optical interconnects","authors":"Ziji Wang, J. Shang","doi":"10.1109/ICEPT50128.2020.9202997","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202997","url":null,"abstract":"We demonstrate our efforts in design and fabrication toward a 3D composite glass-silicon photonic interposer which integrated with silicon nitride waveguides for high-capacity and low-cost on-interposer optical interconnects. By using borosilicate glass as silicon nitride waveguide bottom cladding, low-cost and robust 3D composite photonic interposer can be realized for high-performance optoelectronic and MEMS packaging applications.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115759323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of DB-FIB in Defect Location for Failure Analysis DB-FIB在故障分析缺陷定位中的应用
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202520
Jialin Zhang, Y. Huang, Guangning Xu, Yiqiang Ni
{"title":"Application of DB-FIB in Defect Location for Failure Analysis","authors":"Jialin Zhang, Y. Huang, Guangning Xu, Yiqiang Ni","doi":"10.1109/ICEPT50128.2020.9202520","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202520","url":null,"abstract":"Dual-beam Focused Ion Beam (DB-FIB) has become an important tool in semiconductor industry, especially in failure analysis (FA). However, the conventional FIB profiling method is often difficult to locate the specific location of nanoscale defects, and the failure point is likely to disappear due to the destructive physical analysis. In this work for the localization of nanoscale defects, we use the real-time observation by SEM when FIB is processing, which can comprehensively observe the changes of profile. When abnormal profile state is found, the processing of FIB could be stop immediately to ensure that the complete morphology of defects is retained and would not be destroyed by FIB processing, so as to realize the precise location of nanoscale defects.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"376 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114789615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3D Package CSP Solder Joints Morphological Parameters Sensitivity Analysis and Optimization in Temperature-vibration Coupling Environment 温度振动耦合环境下3D封装CSP焊点形态参数敏感性分析与优化
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202921
Lishuai Han, Hongqin Wang, Chunyue Huang, Wei Li, Jinbao Cai
{"title":"3D Package CSP Solder Joints Morphological Parameters Sensitivity Analysis and Optimization in Temperature-vibration Coupling Environment","authors":"Lishuai Han, Hongqin Wang, Chunyue Huang, Wei Li, Jinbao Cai","doi":"10.1109/ICEPT50128.2020.9202921","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202921","url":null,"abstract":"The finite element model of a 3D packaged CSP solder joint interconnect structure was established using ANSYS, and the temperature vibration coupling load is applied to analyze the stress-strain distribution of CSP solder joint in the model. The results show that the stress and strain distribution in the solder joints is uneven, the maximum stress and strain solder joints appear at the outermost corners of the solder joint array, and the stress and strain of the top solder joints are greater than those of the bottom solder joints. At the same time, the sensitivity analysis of the influence of CSP solder joint morphological parameters on the maximum equivalent stress was carried out. The results show that at the 95% confidence level, there are three factors that have significant effect on the maximum equivalent stress of the top layer. The order of the factors is diameter of the lower pad > height of the solder joint > volume of the solder joint. Based on orthogonal experiments and particle swarm optimization algorithm, the multi-objective optimization of CSP solder joint morphological parameters was carried out. It was found that the optimal parameters were the combination of solder joint volume 0.00818mm3, lower pad diameter 0.25mm and solder joint height 0.25mm. The result of stress calculated by simulation is smaller than that of each combination in orthogonal table. Therefore, the optimization method based on the combination of orthogonal experiments and particle swarm optimization can be applied to the optimization of 3D package CSP solder joint interconnection structure parameters.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116941888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling and Analysis of Differential Crosstalk of Interconnect Structures in High-Density Packages 高密度封装互连结构差分串扰建模与分析
2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI: 10.1109/ICEPT50128.2020.9202513
Hui Xuan, Guohua Gao
{"title":"Modeling and Analysis of Differential Crosstalk of Interconnect Structures in High-Density Packages","authors":"Hui Xuan, Guohua Gao","doi":"10.1109/ICEPT50128.2020.9202513","DOIUrl":"https://doi.org/10.1109/ICEPT50128.2020.9202513","url":null,"abstract":"Aiming at the problem of large analysis error of the traditional model, the modeling and analysis of differential signal crosstalk of interconnect structure in high-density packages is proposed. Based on the analysis of the coupling relationship of the differential transmission line of interconnect structure, a four-wire differential structure crosstalk model is created; This model conducts equivalent analysis of the resistance, capacitance and inductance in the differential crosstalk of the interconnect structure, and solves the problem of differential crosstalk of the interconnect structure in the high-density packages. Experiments have proved that the average error of the model established is 0.042 this time, which satisfies the suppression of high-density packages accuracy requirements for differential crosstalk of the interconnect structures.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117256663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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