Mengqin Chen, Y. Bai, Zhifeng Zhang, Hansen Zheng, Zhuoran Zhang
{"title":"电子封装材料SiC预制体的制备研究","authors":"Mengqin Chen, Y. Bai, Zhifeng Zhang, Hansen Zheng, Zhuoran Zhang","doi":"10.1109/ICEPT50128.2020.9202555","DOIUrl":null,"url":null,"abstract":"In this paper, the porous SiC preforms•were prepared by compression molding and sintering with SiC particles of 100μm and 12μm, NH<inf>4</inf>HCO<inf>3</inf> as pore-forming agent and NH<inf>4</inf>H<inf>2</inf>PO<inf>4</inf> as binder. The NH<inf>4</inf>HCO<inf>3</inf> is an excellent pore forming agent because of its no residual impurities. The pore-forming mechanism of NH<inf>4</inf>HCO<inf>3</inf> were studied, it shows that NH<inf>4</inf>HCO<inf>3</inf> decomposes at high temperature and forms pores at corresponding positions. In a certain range, with the increase of NH<inf>4</inf>HCO<inf>3</inf> content, the number of pores in the preform increases and the pore connectivity becomes better. Through the study of the volume ratio of coarse and fine SiC particles, it shows that the volume fraction of preform can be effectively adjusted by changing the ratio of 100μm and 12μm SiC. Additionally, this work verified the feasibility of ultrasonic cleaning SiC process and preform thermal debinding and sintering process. It shows that the preform with ideal appearance, porosity and strength can be well prepared by controlling these process parameters.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study on Preparation of SiC Preform for Electronic Packaging Material\",\"authors\":\"Mengqin Chen, Y. Bai, Zhifeng Zhang, Hansen Zheng, Zhuoran Zhang\",\"doi\":\"10.1109/ICEPT50128.2020.9202555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the porous SiC preforms•were prepared by compression molding and sintering with SiC particles of 100μm and 12μm, NH<inf>4</inf>HCO<inf>3</inf> as pore-forming agent and NH<inf>4</inf>H<inf>2</inf>PO<inf>4</inf> as binder. The NH<inf>4</inf>HCO<inf>3</inf> is an excellent pore forming agent because of its no residual impurities. The pore-forming mechanism of NH<inf>4</inf>HCO<inf>3</inf> were studied, it shows that NH<inf>4</inf>HCO<inf>3</inf> decomposes at high temperature and forms pores at corresponding positions. In a certain range, with the increase of NH<inf>4</inf>HCO<inf>3</inf> content, the number of pores in the preform increases and the pore connectivity becomes better. Through the study of the volume ratio of coarse and fine SiC particles, it shows that the volume fraction of preform can be effectively adjusted by changing the ratio of 100μm and 12μm SiC. Additionally, this work verified the feasibility of ultrasonic cleaning SiC process and preform thermal debinding and sintering process. It shows that the preform with ideal appearance, porosity and strength can be well prepared by controlling these process parameters.\",\"PeriodicalId\":136777,\"journal\":{\"name\":\"2020 21st International Conference on Electronic Packaging Technology (ICEPT)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 21st International Conference on Electronic Packaging Technology (ICEPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT50128.2020.9202555\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT50128.2020.9202555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study on Preparation of SiC Preform for Electronic Packaging Material
In this paper, the porous SiC preforms•were prepared by compression molding and sintering with SiC particles of 100μm and 12μm, NH4HCO3 as pore-forming agent and NH4H2PO4 as binder. The NH4HCO3 is an excellent pore forming agent because of its no residual impurities. The pore-forming mechanism of NH4HCO3 were studied, it shows that NH4HCO3 decomposes at high temperature and forms pores at corresponding positions. In a certain range, with the increase of NH4HCO3 content, the number of pores in the preform increases and the pore connectivity becomes better. Through the study of the volume ratio of coarse and fine SiC particles, it shows that the volume fraction of preform can be effectively adjusted by changing the ratio of 100μm and 12μm SiC. Additionally, this work verified the feasibility of ultrasonic cleaning SiC process and preform thermal debinding and sintering process. It shows that the preform with ideal appearance, porosity and strength can be well prepared by controlling these process parameters.