Integrated Power Chip Carrier Based on High Silicon Aluminum Alloy and its Application

Abstract

A new integrated power chip carrier based on high silicon aluminum alloy for high power microwave module is proposed. The film capacitance, RDL and eutectic layer are formed on the surface of high silicon aluminum alloy substrate by the fabrication process which includes flatten, magnetron sputtering, anodizing, lithography, electroplating, and etching. The whole substrate is divided into a single integrated power chip carrier by dicing technology after metallization process on the back of substrate. The capacitances value of the film capacitance is about 7 μf/mm2, and the resistance of RDL is less than 0.15 Ω/mm. The GaAs power chip is eutectic bonded to the integrated power chip carrier, and the chip carrier is assembled into a double channel microwave module by solder welding. Then the GaAs chip, film capacitance and RDL are electrical interlinked by using Au wire bonding to complete the preparation of the microwave module. The peak power and output harmonic of channel 1# of microwave module are 9.7 W and -47.97 dBc, and the peak power and output harmonic of channel 2# of microwave module are 10.6 W and -48.51 dBc.