Symposium 1989 on VLSI Circuits最新文献

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ALTICS: an advanced timing analysis system for VLSI ALTICS:一种先进的VLSI时序分析系统
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037467
H. Yamauchi, H. Sakuma, Y. Fujinami, K. Takamizawa
{"title":"ALTICS: an advanced timing analysis system for VLSI","authors":"H. Yamauchi, H. Sakuma, Y. Fujinami, K. Takamizawa","doi":"10.1109/VLSIC.1989.1037467","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037467","url":null,"abstract":"Timing verification is one of the most difficult tasks In logic LSI designing. For example, in designing ASICs using automatic layout. despite the dispersion of wiring length has to be considered in clocking skew or setup/hold verification before the Layout. logic simulator cannot deal with such kinds of problems. and has a shortcoming that it can verify only those which can be activated by a given test pattern. The path analysis [I1 C21 Is another approach, however, i t has a wssibllity to detect the paths that cannot be activated and is only avallable for SimPIY smchronized circuits. Therefor, any exlsting CAD twls cannot verify the setup/hold constrafnts accurately. To overcome these problem we have developed a new timing analysis system, called ALTiCS. Thls system uses a new path analysis method. I.e., through the estlmation of logical behavlors. it can eliminate the paths that cannot be activated. Precise backward-trace for clock distribution circult relaxes the restriction on smchronlzation. Combination of two optimized Path trace realizes a setuP/hoid veriflcation within a practically acceptable mmputatlon time.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128586644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new staggered virtual ground array architecture implemented in a 4Mb CMOS EPROM 在4Mb CMOS EPROM中实现了一种新的交错虚拟地阵列架构
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037477
S. All, D. Nguyen, B. Sani, A. Shubat, C. Hu, Y. Me, R. Kazarounian, B. Eltan
{"title":"A new staggered virtual ground array architecture implemented in a 4Mb CMOS EPROM","authors":"S. All, D. Nguyen, B. Sani, A. Shubat, C. Hu, Y. Me, R. Kazarounian, B. Eltan","doi":"10.1109/VLSIC.1989.1037477","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037477","url":null,"abstract":"A new a r ray a r c h l t e c t u r e I s Introduced which I s s u l t a b l e f o r very h lgh dens l t y €PROMS. For a g lven se t o f deslgn r u l e s , t h l s approach y l e l d s 40% Smaller a r r a y size compared t o Drevlous a r r a y a rch l tec tu res . The Staggered V l r t u a l Ground (SVG) a r ray has been Implemented based on the sp l I t gate EPROM technology. A dual f unc t l on column muxlng scheme and Address T r a n s l t f o n Detec t lon deslgn techniques have been used t o achleve a 90nS 4Mb EPROM. The d l e size I s 7.6mn x 6 . 5 m and has been f a b r l c a t e d I n a 1.25um CMOS technology.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131194600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 50MHz 8Mb video RAM with a column direction drive sense amplifier 一个50MHz的8Mb视频RAM与一个列方向驱动感测放大器
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037511
H. Kotani, H. Akarnatsu, J. Matsushima, S. Okada, T. Shiragasawa, J. Houma, T. Yamada, M. Inoue
{"title":"A 50MHz 8Mb video RAM with a column direction drive sense amplifier","authors":"H. Kotani, H. Akarnatsu, J. Matsushima, S. Okada, T. Shiragasawa, J. Houma, T. Yamada, M. Inoue","doi":"10.1109/VLSIC.1989.1037511","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037511","url":null,"abstract":"Ahstract-An 8-Mbit (1 Mwordsx8 bits) dynamic RAM for video applications has been developed. To obtain low peak current, a new sensing scheme called the column direction drive (CDD) sense amplifier is proposed. The power supply peak current is reduced to about one fourth when compared with conventional circuits. The chip is able to operate at 50 MHz. The chip is fabricated with a 0.7-pm n-well CMOS, double-level polysilicon, single polycide, and double-level metal technology. The memory cell is a surrounding hi-capacitance cell (SCC) structure. The cell sue is 1.8X3.0 pd, and the chip area is 12.7X 16.91 md.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130849975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A monolithically integrated fiber-optic front-end receiver in GaAs Si technology GaAs Si技术中的单片集成光纤前端接收器
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037500
G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris
{"title":"A monolithically integrated fiber-optic front-end receiver in GaAs Si technology","authors":"G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris","doi":"10.1109/VLSIC.1989.1037500","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037500","url":null,"abstract":"A fiber-optic receiver front-end integratedin B monolithic GaAr on silicon technology is described. In this circuit an interdigitated GaAs metal-semiconductor-metal photodetector is combined with a transimpedance preamplifier fabricated in silicon bipols technology. The integrated receiver is designed to operate with il bandwidth of 1GRz and a preamplifier transimpedance of 5kR.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132929600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An experimental 27w 1Mb CMOS high-speed DRAM 实验性27w 1Mb CMOS高速DRAM
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037512
S. Dhong, W. Henkels, N. Lu, R. Scheuerlein, G. Brunner, K. Kitamura, V. Katavama, H. Niijima, T. Kirihata, R. Franch, W. Hwang, M. Nishiwaki, F. Pesavento, T. Rajeevakumar, Y. Sakaue, Y. Suzuki, E. Vañó
{"title":"An experimental 27w 1Mb CMOS high-speed DRAM","authors":"S. Dhong, W. Henkels, N. Lu, R. Scheuerlein, G. Brunner, K. Kitamura, V. Katavama, H. Niijima, T. Kirihata, R. Franch, W. Hwang, M. Nishiwaki, F. Pesavento, T. Rajeevakumar, Y. Sakaue, Y. Suzuki, E. Vañó","doi":"10.1109/VLSIC.1989.1037512","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037512","url":null,"abstract":"","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132281526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High performance BiCMOS circuit technology VLSI gate arrays 高性能BiCMOS电路技术VLSI门阵列
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037463
J. Gallia, A. Yee, K. Chau, I. Wang, W. Davis, K. Moore, B. Chas, C. Lemonds, R. Eklund, R. Havemann, T. Bonifield, J. Graham, J. Pozadzides, A. Shah
{"title":"High performance BiCMOS circuit technology VLSI gate arrays","authors":"J. Gallia, A. Yee, K. Chau, I. Wang, W. Davis, K. Moore, B. Chas, C. Lemonds, R. Eklund, R. Havemann, T. Bonifield, J. Graham, J. Pozadzides, A. Shah","doi":"10.1109/VLSIC.1989.1037463","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037463","url":null,"abstract":"BiCMOS circuits have been shown to be particularly attractive lor gate array applications because 01 ECL I/O and the high on-chip capacitance drive capabilnies. Full BiCMOS gate arrays have been introduced with densities up to 20k gates11.2.sl. However, due to bipolar size constraints, higher density arrays have been restricted to CMOS wre with BiCMOS used only in the periphery of the wre and lor ECLmL 1/0.[41","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132295634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A circuit design to suppress asymmetrical characteristics in 16-Mbit DRAM sense amplifier 一种抑制16mbit DRAM感测放大器不对称特性的电路设计
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037513
H. Yamauchi, T. Yabu, T. Yamada, M. Inoue
{"title":"A circuit design to suppress asymmetrical characteristics in 16-Mbit DRAM sense amplifier","authors":"H. Yamauchi, T. Yabu, T. Yamada, M. Inoue","doi":"10.1109/VLSIC.1989.1037513","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037513","url":null,"abstract":"1) INTRODUCTlON Recently,lG-Mbit DRAMS have been designed and fabricated using submicron CMOS technology. However, the submicron MOSFETs with LDD or Efficient Punch through Stop (EPS) structure 111 have serious problems-such as 1) the drain current asymmetry, 2) the threshold voltage difference , and 3) the gatekource capacitance imbalance. [21[31 This is due to asymmetry of source and drain impurity profile caused by the shadowing of ion-beams by gate electrodes. This asymmetry has been reported to degrade the sensitivity of a DRAM sense amplifier com osed of LDD or EPS transistors.[31 I41 Several metRods to suppress the asymmetry effects using the oblique-rotating ion implantation technique have been proposed.[Z1[51 In this paper, we propose a novel circuit design to suppress the sense amplifier asymmetry effects not using the special process technique, and describe the e x p e r i m e n t a l r e s u l t s a b o u t t h e s e n s i t i v i t y improvement of the 16-Mbit DRAM sense amplifier by using the circuit design technique, and also compare with the values in case of using the obliquerotatin ion implantaion technique.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128681026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of optically coupled three dimensional common memory for parallel processor system 并行处理器系统的光耦合三维公共存储器设计
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037499
M. Koyanagi, H. Takata, H. Mori, M. Hirose
{"title":"Design of optically coupled three dimensional common memory for parallel processor system","authors":"M. Koyanagi, H. Takata, H. Mori, M. Hirose","doi":"10.1109/VLSIC.1989.1037499","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037499","url":null,"abstract":"1 . I n t r o d u c t i o n The o p t i c a l l y c o u p l e d t h r e e d i m e n s i o n a l common memory ( c a l l e d 3D-OCC memory h e r e a f t e r ) i a a newly p roposed i n t e l l i g e n t memory f o r h i g h speed p a r a l l e l p r o c e s s i n g i n c o m p u t a t i o n [ l ] . Rapid t r a n s f e r of memory d a t a and t h e i r s i m u l t a n e o u s use by many CPU's are key i s s u e s f o r a c h i e v i n g u l t r a f a s t p a r a l l e l p r o c e s s i n g . The 3 D O C C memory i a a b l e t o t r a n s f e r a l a r g e b l o c k of d a t a w i t h v e r y h i g h speed by means of o p t i c a l c o u p l i n g in t h e v e r t i c a l d i r e c t i o n , v h i l e t h e c o n v e n t i o n a l memory o p e r a t i o n i s c a r r i e d o u t in t h e h o r i a o n t a l p l s n e . A l s o , s t o r e d d a t a i n t h e c o m m o n memory c a n b e a c c e s s e d by many p r o o e s s o r a v i t h o u t c o l l i s i o n . T h i s p a p e r d e s c r i b e 8 t h e d e a i g n methodology o f s u c h 3D-OCC memory w i t h t h e c a p a c i t y of 4 K b i t a x l b i t x 4 l a y e r s b a s e d on 2pm CMOS t e c h n o l o g y .","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125768352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High-performance multiple-valued radix-2 signed-digit multiplier and its application 高性能多值基数-2符号数乘法器及其应用
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037521
S. Kawahitc, M. Kameyama, T. Higuchi
{"title":"High-performance multiple-valued radix-2 signed-digit multiplier and its application","authors":"S. Kawahitc, M. Kameyama, T. Higuchi","doi":"10.1109/VLSIC.1989.1037521","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037521","url":null,"abstract":"1. I \" 0 N In various VLSI systems for real-time applications, high-speed compact multipliers are required a s mcrocells. Signed-digit(SD) number representations are useful for such high-speed arithmetic circuits[l]. Since the SD number representation uses more than 3 values in each digit, we can expect the effective use of multiplevalued logic circuits for the compact harduare(VLS1) implementations. In particular, multiple-valued bidirectional current-mode circmits is essentially suitable. because frequently used linear summation including polarity can be performed by wiring[Z]. From the view point of compactness, the radix-4 SD number representation is attractive[31. For VLSI implementation, however, the radix-2 SD number( also called redundant binary number) representation is useful from the view points of stable and faster operation of multiple-valued current-mode circuits, if present VLSI process technology is directly used. In this paper, we describes high-speed compact radix-2 SO multiplier using multiple-valued current-mode logic circuits. A new tree structure of the SD multiplier using &-input addition of partial products are proposed. The current-mode wired summation can be fully used far the structure, so that the number of full adders and interconnections can be drastically reduced. The implemented results of a prototype adder chip as the basic module are shown. Finally, an application to highly parallel vector inner product processing is discussed. 2. BIDIREcTlowAL -DE SD llRIllHZlTC CIRCUITS The radix-2 SD number system utilized here is a redundant representation using a symmetrical digit set(-1. 0.1). Addition of two numbers, X and Y are performed by the following successive steps in each digit. STEP 1: STEP 2: 2c; + Yi = z> zi = xi + yi","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126864781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Jitter analysis of high speed sampling systems 高速采样系统的抖动分析
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037506
M. Shinagawa, Y. Akazawa, T. Wakimoto
{"title":"Jitter analysis of high speed sampling systems","authors":"M. Shinagawa, Y. Akazawa, T. Wakimoto","doi":"10.1109/VLSIC.1989.1037506","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037506","url":null,"abstract":"1.Introductlon Recent LSI technology advances have resulted in major improvements in electronics. For A-to-D converters. particularly. not only a very high precision over 90 dB [I] but also an ultra high speed of 2 GHz for 6bit [2] have already been achieved. Accuracy and speed limitations of the converters are obviously important. Jitter problems are thought to be the principle limiting factors on the accuracy and speed of the converter. In this paper, our research penaining to these problems will be presented. First, a jitter generation model far a practical sampling system. including signal and clock generator jitter. will be proposed. Based on this model. a precision jitter measurement method is shown. which also enables each jitter component to be separated. Finally. accuracy and speed limitations of the converter will be discussed. and it will also be shown that effective band-width compro-ation between jitter reduction and operating speed are important for more advanced converter design.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128871709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 105
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