H. Yamauchi, H. Sakuma, Y. Fujinami, K. Takamizawa
{"title":"ALTICS: an advanced timing analysis system for VLSI","authors":"H. Yamauchi, H. Sakuma, Y. Fujinami, K. Takamizawa","doi":"10.1109/VLSIC.1989.1037467","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037467","url":null,"abstract":"Timing verification is one of the most difficult tasks In logic LSI designing. For example, in designing ASICs using automatic layout. despite the dispersion of wiring length has to be considered in clocking skew or setup/hold verification before the Layout. logic simulator cannot deal with such kinds of problems. and has a shortcoming that it can verify only those which can be activated by a given test pattern. The path analysis [I1 C21 Is another approach, however, i t has a wssibllity to detect the paths that cannot be activated and is only avallable for SimPIY smchronized circuits. Therefor, any exlsting CAD twls cannot verify the setup/hold constrafnts accurately. To overcome these problem we have developed a new timing analysis system, called ALTiCS. Thls system uses a new path analysis method. I.e., through the estlmation of logical behavlors. it can eliminate the paths that cannot be activated. Precise backward-trace for clock distribution circult relaxes the restriction on smchronlzation. Combination of two optimized Path trace realizes a setuP/hoid veriflcation within a practically acceptable mmputatlon time.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128586644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. All, D. Nguyen, B. Sani, A. Shubat, C. Hu, Y. Me, R. Kazarounian, B. Eltan
{"title":"A new staggered virtual ground array architecture implemented in a 4Mb CMOS EPROM","authors":"S. All, D. Nguyen, B. Sani, A. Shubat, C. Hu, Y. Me, R. Kazarounian, B. Eltan","doi":"10.1109/VLSIC.1989.1037477","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037477","url":null,"abstract":"A new a r ray a r c h l t e c t u r e I s Introduced which I s s u l t a b l e f o r very h lgh dens l t y €PROMS. For a g lven se t o f deslgn r u l e s , t h l s approach y l e l d s 40% Smaller a r r a y size compared t o Drevlous a r r a y a rch l tec tu res . The Staggered V l r t u a l Ground (SVG) a r ray has been Implemented based on the sp l I t gate EPROM technology. A dual f unc t l on column muxlng scheme and Address T r a n s l t f o n Detec t lon deslgn techniques have been used t o achleve a 90nS 4Mb EPROM. The d l e size I s 7.6mn x 6 . 5 m and has been f a b r l c a t e d I n a 1.25um CMOS technology.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131194600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Kotani, H. Akarnatsu, J. Matsushima, S. Okada, T. Shiragasawa, J. Houma, T. Yamada, M. Inoue
{"title":"A 50MHz 8Mb video RAM with a column direction drive sense amplifier","authors":"H. Kotani, H. Akarnatsu, J. Matsushima, S. Okada, T. Shiragasawa, J. Houma, T. Yamada, M. Inoue","doi":"10.1109/VLSIC.1989.1037511","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037511","url":null,"abstract":"Ahstract-An 8-Mbit (1 Mwordsx8 bits) dynamic RAM for video applications has been developed. To obtain low peak current, a new sensing scheme called the column direction drive (CDD) sense amplifier is proposed. The power supply peak current is reduced to about one fourth when compared with conventional circuits. The chip is able to operate at 50 MHz. The chip is fabricated with a 0.7-pm n-well CMOS, double-level polysilicon, single polycide, and double-level metal technology. The memory cell is a surrounding hi-capacitance cell (SCC) structure. The cell sue is 1.8X3.0 pd, and the chip area is 12.7X 16.91 md.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130849975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris
{"title":"A monolithically integrated fiber-optic front-end receiver in GaAs Si technology","authors":"G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris","doi":"10.1109/VLSIC.1989.1037500","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037500","url":null,"abstract":"A fiber-optic receiver front-end integratedin B monolithic GaAr on silicon technology is described. In this circuit an interdigitated GaAs metal-semiconductor-metal photodetector is combined with a transimpedance preamplifier fabricated in silicon bipols technology. The integrated receiver is designed to operate with il bandwidth of 1GRz and a preamplifier transimpedance of 5kR.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132929600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Dhong, W. Henkels, N. Lu, R. Scheuerlein, G. Brunner, K. Kitamura, V. Katavama, H. Niijima, T. Kirihata, R. Franch, W. Hwang, M. Nishiwaki, F. Pesavento, T. Rajeevakumar, Y. Sakaue, Y. Suzuki, E. Vañó
{"title":"An experimental 27w 1Mb CMOS high-speed DRAM","authors":"S. Dhong, W. Henkels, N. Lu, R. Scheuerlein, G. Brunner, K. Kitamura, V. Katavama, H. Niijima, T. Kirihata, R. Franch, W. Hwang, M. Nishiwaki, F. Pesavento, T. Rajeevakumar, Y. Sakaue, Y. Suzuki, E. Vañó","doi":"10.1109/VLSIC.1989.1037512","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037512","url":null,"abstract":"","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132281526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Gallia, A. Yee, K. Chau, I. Wang, W. Davis, K. Moore, B. Chas, C. Lemonds, R. Eklund, R. Havemann, T. Bonifield, J. Graham, J. Pozadzides, A. Shah
{"title":"High performance BiCMOS circuit technology VLSI gate arrays","authors":"J. Gallia, A. Yee, K. Chau, I. Wang, W. Davis, K. Moore, B. Chas, C. Lemonds, R. Eklund, R. Havemann, T. Bonifield, J. Graham, J. Pozadzides, A. Shah","doi":"10.1109/VLSIC.1989.1037463","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037463","url":null,"abstract":"BiCMOS circuits have been shown to be particularly attractive lor gate array applications because 01 ECL I/O and the high on-chip capacitance drive capabilnies. Full BiCMOS gate arrays have been introduced with densities up to 20k gates11.2.sl. However, due to bipolar size constraints, higher density arrays have been restricted to CMOS wre with BiCMOS used only in the periphery of the wre and lor ECLmL 1/0.[41","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132295634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fuzzy logic hardware systems","authors":"T. Yamakawa","doi":"10.1109/VLSIC.1989.1037460","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037460","url":null,"abstract":"/uatnad Novel fuzzy microprocessors are described, which achieve fuzzy inference with deterministic input and output signals. These two kinds of fuzzy microprocessors are useful for constructing sophisticated fuzzy logic controller. One is a rule chip and the other is a defuzzifier chip. The former is in the monolithic form and the latter is in hybrid structure. These fuzzy microprocessors will rapidly permeate the industry.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132629099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A circuit design to suppress asymmetrical characteristics in 16-Mbit DRAM sense amplifier","authors":"H. Yamauchi, T. Yabu, T. Yamada, M. Inoue","doi":"10.1109/VLSIC.1989.1037513","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037513","url":null,"abstract":"1) INTRODUCTlON Recently,lG-Mbit DRAMS have been designed and fabricated using submicron CMOS technology. However, the submicron MOSFETs with LDD or Efficient Punch through Stop (EPS) structure 111 have serious problems-such as 1) the drain current asymmetry, 2) the threshold voltage difference , and 3) the gatekource capacitance imbalance. [21[31 This is due to asymmetry of source and drain impurity profile caused by the shadowing of ion-beams by gate electrodes. This asymmetry has been reported to degrade the sensitivity of a DRAM sense amplifier com osed of LDD or EPS transistors.[31 I41 Several metRods to suppress the asymmetry effects using the oblique-rotating ion implantation technique have been proposed.[Z1[51 In this paper, we propose a novel circuit design to suppress the sense amplifier asymmetry effects not using the special process technique, and describe the e x p e r i m e n t a l r e s u l t s a b o u t t h e s e n s i t i v i t y improvement of the 16-Mbit DRAM sense amplifier by using the circuit design technique, and also compare with the values in case of using the obliquerotatin ion implantaion technique.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128681026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of optically coupled three dimensional common memory for parallel processor system","authors":"M. Koyanagi, H. Takata, H. Mori, M. Hirose","doi":"10.1109/VLSIC.1989.1037499","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037499","url":null,"abstract":"1 . I n t r o d u c t i o n The o p t i c a l l y c o u p l e d t h r e e d i m e n s i o n a l common memory ( c a l l e d 3D-OCC memory h e r e a f t e r ) i a a newly p roposed i n t e l l i g e n t memory f o r h i g h speed p a r a l l e l p r o c e s s i n g i n c o m p u t a t i o n [ l ] . Rapid t r a n s f e r of memory d a t a and t h e i r s i m u l t a n e o u s use by many CPU's are key i s s u e s f o r a c h i e v i n g u l t r a f a s t p a r a l l e l p r o c e s s i n g . The 3 D O C C memory i a a b l e t o t r a n s f e r a l a r g e b l o c k of d a t a w i t h v e r y h i g h speed by means of o p t i c a l c o u p l i n g in t h e v e r t i c a l d i r e c t i o n , v h i l e t h e c o n v e n t i o n a l memory o p e r a t i o n i s c a r r i e d o u t in t h e h o r i a o n t a l p l s n e . A l s o , s t o r e d d a t a i n t h e c o m m o n memory c a n b e a c c e s s e d by many p r o o e s s o r a v i t h o u t c o l l i s i o n . T h i s p a p e r d e s c r i b e 8 t h e d e a i g n methodology o f s u c h 3D-OCC memory w i t h t h e c a p a c i t y of 4 K b i t a x l b i t x 4 l a y e r s b a s e d on 2pm CMOS t e c h n o l o g y .","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125768352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-performance multiple-valued radix-2 signed-digit multiplier and its application","authors":"S. Kawahitc, M. Kameyama, T. Higuchi","doi":"10.1109/VLSIC.1989.1037521","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037521","url":null,"abstract":"1. I \" 0 N In various VLSI systems for real-time applications, high-speed compact multipliers are required a s mcrocells. Signed-digit(SD) number representations are useful for such high-speed arithmetic circuits[l]. Since the SD number representation uses more than 3 values in each digit, we can expect the effective use of multiplevalued logic circuits for the compact harduare(VLS1) implementations. In particular, multiple-valued bidirectional current-mode circmits is essentially suitable. because frequently used linear summation including polarity can be performed by wiring[Z]. From the view point of compactness, the radix-4 SD number representation is attractive[31. For VLSI implementation, however, the radix-2 SD number( also called redundant binary number) representation is useful from the view points of stable and faster operation of multiple-valued current-mode circuits, if present VLSI process technology is directly used. In this paper, we describes high-speed compact radix-2 SO multiplier using multiple-valued current-mode logic circuits. A new tree structure of the SD multiplier using &-input addition of partial products are proposed. The current-mode wired summation can be fully used far the structure, so that the number of full adders and interconnections can be drastically reduced. The implemented results of a prototype adder chip as the basic module are shown. Finally, an application to highly parallel vector inner product processing is discussed. 2. BIDIREcTlowAL -DE SD llRIllHZlTC CIRCUITS The radix-2 SD number system utilized here is a redundant representation using a symmetrical digit set(-1. 0.1). Addition of two numbers, X and Y are performed by the following successive steps in each digit. STEP 1: STEP 2: 2c; + Yi = z> zi = xi + yi","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126864781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}