G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris
{"title":"A monolithically integrated fiber-optic front-end receiver in GaAs Si technology","authors":"G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris","doi":"10.1109/VLSIC.1989.1037500","DOIUrl":null,"url":null,"abstract":"A fiber-optic receiver front-end integratedin B monolithic GaAr on silicon technology is described. In this circuit an interdigitated GaAs metal-semiconductor-metal photodetector is combined with a transimpedance preamplifier fabricated in silicon bipols technology. The integrated receiver is designed to operate with il bandwidth of 1GRz and a preamplifier transimpedance of 5kR.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037500","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A fiber-optic receiver front-end integratedin B monolithic GaAr on silicon technology is described. In this circuit an interdigitated GaAs metal-semiconductor-metal photodetector is combined with a transimpedance preamplifier fabricated in silicon bipols technology. The integrated receiver is designed to operate with il bandwidth of 1GRz and a preamplifier transimpedance of 5kR.