S. All, D. Nguyen, B. Sani, A. Shubat, C. Hu, Y. Me, R. Kazarounian, B. Eltan
{"title":"A new staggered virtual ground array architecture implemented in a 4Mb CMOS EPROM","authors":"S. All, D. Nguyen, B. Sani, A. Shubat, C. Hu, Y. Me, R. Kazarounian, B. Eltan","doi":"10.1109/VLSIC.1989.1037477","DOIUrl":null,"url":null,"abstract":"A new a r ray a r c h l t e c t u r e I s Introduced which I s s u l t a b l e f o r very h lgh dens l t y €PROMS. For a g lven se t o f deslgn r u l e s , t h l s approach y l e l d s 40% Smaller a r r a y size compared t o Drevlous a r r a y a rch l tec tu res . The Staggered V l r t u a l Ground (SVG) a r ray has been Implemented based on the sp l I t gate EPROM technology. A dual f unc t l on column muxlng scheme and Address T r a n s l t f o n Detec t lon deslgn techniques have been used t o achleve a 90nS 4Mb EPROM. The d l e size I s 7.6mn x 6 . 5 m and has been f a b r l c a t e d I n a 1.25um CMOS technology.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A new a r ray a r c h l t e c t u r e I s Introduced which I s s u l t a b l e f o r very h lgh dens l t y €PROMS. For a g lven se t o f deslgn r u l e s , t h l s approach y l e l d s 40% Smaller a r r a y size compared t o Drevlous a r r a y a rch l tec tu res . The Staggered V l r t u a l Ground (SVG) a r ray has been Implemented based on the sp l I t gate EPROM technology. A dual f unc t l on column muxlng scheme and Address T r a n s l t f o n Detec t lon deslgn techniques have been used t o achleve a 90nS 4Mb EPROM. The d l e size I s 7.6mn x 6 . 5 m and has been f a b r l c a t e d I n a 1.25um CMOS technology.
A ar ar新雷c h l t e c t u r e s I Introduced哪种美国洛杉矶t b h l e f o r非常lgh穴l t y€PROMS。对于一个人来说,这是不可能的。Staggered V l r r u Ground (SVG)有一段r ray根据sp . I t gate EPROM technology推出。一个反f的f我的尺寸是7。6×6。5米,一直是联邦调查局的技术。