GaAs Si技术中的单片集成光纤前端接收器

Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI:10.1109/VLSIC.1989.1037500

G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris

{"title":"GaAs Si技术中的单片集成光纤前端接收器","authors":"G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris","doi":"10.1109/VLSIC.1989.1037500","DOIUrl":null,"url":null,"abstract":"A fiber-optic receiver front-end integratedin B monolithic GaAr on silicon technology is described. In this circuit an interdigitated GaAs metal-semiconductor-metal photodetector is combined with a transimpedance preamplifier fabricated in silicon bipols technology. The integrated receiver is designed to operate with il bandwidth of 1GRz and a preamplifier transimpedance of 5kR.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A monolithically integrated fiber-optic front-end receiver in GaAs Si technology\",\"authors\":\"G. Nasserbakht, J. Adkisson, T. Kamins, B. Wooley, J. Harris\",\"doi\":\"10.1109/VLSIC.1989.1037500\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fiber-optic receiver front-end integratedin B monolithic GaAr on silicon technology is described. In this circuit an interdigitated GaAs metal-semiconductor-metal photodetector is combined with a transimpedance preamplifier fabricated in silicon bipols technology. The integrated receiver is designed to operate with il bandwidth of 1GRz and a preamplifier transimpedance of 5kR.\",\"PeriodicalId\":136228,\"journal\":{\"name\":\"Symposium 1989 on VLSI Circuits\",\"volume\":\"160 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1989 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1989.1037500\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037500","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

介绍了一种集成在硅基单片GaAr中的光纤接收机前端。在这个电路中，一个交叉数字的砷化镓金属-半导体-金属光电探测器与一个用硅双极电极技术制造的透阻前置放大器相结合。该集成接收机的工作带宽为1GRz，前置放大器的通阻为5kR。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A monolithically integrated fiber-optic front-end receiver in GaAs Si technology

A fiber-optic receiver front-end integratedin B monolithic GaAr on silicon technology is described. In this circuit an interdigitated GaAs metal-semiconductor-metal photodetector is combined with a transimpedance preamplifier fabricated in silicon bipols technology. The integrated receiver is designed to operate with il bandwidth of 1GRz and a preamplifier transimpedance of 5kR.

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Symposium 1989 on VLSI Circuits

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