2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)最新文献_第5页

Advanced copper wire bonding technology 先进的铜线粘接技术

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746772

H. Ho

引用次数: 1

A Proposed approach in applying optical character recognition for thermal image processing 一种光学字符识别在热图像处理中的应用方法

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746767

C. Ti, Sim Kok Swee, T. C. Ping

引用次数: 1

Concurrent design for robust and cost efficient semiconductor manufacturing 并行设计稳健和低成本的半导体制造

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746717

F. Y. Lee, Lim Siew Lin, W. Yong

引用次数: 1

Influence of wafer probing against initial bonding 晶圆探测对初始键合的影响

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746671

Suresh Kumar, Siva Rao, Tan Kim Guan, F. Harun

{"title":"Influence of wafer probing against initial bonding","authors":"Suresh Kumar, Siva Rao, Tan Kim Guan, F. Harun","doi":"10.1109/IEMT.2010.5746671","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746671","url":null,"abstract":"Wafer probing technology is a critical testing technology used in the semiconductor manufacturing and packaging process. A well-designed probing system must enable low and stable contact resistance when each needle-like probe makes contact with the IC chip-bonding pad. During wafer testing, probe needles are brought in mechanical contact with aluminum bond pads and electrical contact is made as the probes “scrub” through the oxide and contaminants on the pad surface. This scrubbing action causes the probe needle to disturb or damage the pad metal. This scrub damage can adversely impact the wire bond quality at assembly and add extra costs by lowering bond and assembly yields. As the amount of pad damage increases, the strength and integrity of the bond is reduced. If the bond is too weak, the ball could potentially lift off the pad during the bond process at assembly. This effect is exacerbated for ultra fine pitch bond pads since a larger percentage of the total pad area is damaged during probe test. This paper will be evaluating on the different impacts of probe conditions to wire bond-ability based on both the probe and wafer technology. It was found that pad damage area has a direct impact to bond quality. The larger pad damage area the lower the bond quality and this depends on the factors like probe technology, number of probe touchdown, probe overdrive as well as optimal wire bonding parameters. Results showing that vertical probe technology are better than both advanced and standard cantilever technology while bonding quality can still be maintained even if the probe damage is large as long as bond location is at the toe and not at the center or the heel of the damage area.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132051108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Metal line and via electromigration improvement with wafer level tests 金属线和通过电迁移改进与晶圆级测试

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746673

N. H. Seng, Ecole Hei, R. Tan

{"title":"Metal line and via electromigration improvement with wafer level tests","authors":"N. H. Seng, Ecole Hei, R. Tan","doi":"10.1109/IEMT.2010.5746673","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746673","url":null,"abstract":"In semiconductor, the reliability of interconnects is assessed through electromigration (EM) on specially-designed metal line and via test structures. There are different types of test structures and methodologies for qualification and process monitoring purposes. Packaged level constant current EM (PLR EM) test is a widely accepted method for technology qualification. Wafer level accelerated tests such as Standard Wafer Electromigration Accelerated Test (SWEAT) and Isothermal method (ISOT) are also used to assess the metallization system. However, these methods are normally limited to monitoring and tool comparison when process is stable with enormous baseline data. This paper demonstrates the use of SWEAT and ISOT for process improvement. During technology developments, bimodal behavior of EM lifetime distribution was observed for via test structures. In order to optimize the time spent for testing and cost as well as to solve the PLR EM limited test capacity constraint, the SWEAT and ISOT tests were selected to identify the areas of improvement. These methods have successfully shortened the problem solving process and reduced the expensive long PLR EM test. The EM lifetime has been improved by changing the barrier metal and via glue processes.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128729307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Separation of the bar: Systemic solution of runner bar cull remain problem through leadframe design change 棒料分离:通过引线框架设计变更，系统解决了流道棒料残留问题

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746701

R. Tan, Jose Mario Gemal, L. Lim

引用次数: 0

Low profile tsop approach for MSL 1 delamination free 低轮廓tsop方法MSL 1无分层

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746674

C. Lum

引用次数: 1

Effect of Ni metallization on interfacial reactions and die attach properties of Zn-Al-Mg-Ga high temperature lead-free solder Ni金属化对Zn-Al-Mg-Ga高温无铅焊料界面反应及模具附着性能的影响

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746721

A. Haque, Y. Won, B. Lim, A.S.M.A. Haseeb, H. Masjuki

{"title":"Effect of Ni metallization on interfacial reactions and die attach properties of Zn-Al-Mg-Ga high temperature lead-free solder","authors":"A. Haque, Y. Won, B. Lim, A.S.M.A. Haseeb, H. Masjuki","doi":"10.1109/IEMT.2010.5746721","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746721","url":null,"abstract":"Interfacial reactions during Si die attachment with Zn-Al-Mg-Ga high-temperature lead (Pb)-free solder on bare Cu lead-frame (Tamac 4) and Ni metallized Cu lead-frame were investigated using an optical microscope, scanning electron microscope (SEM) and energy dispersive x-ray (EDX). Die attachment was performed in an automatic die attach machine in a forming gas environment at temperature 380°C. The back side of the die was metallized with Ti/Ni/Ag layers. Comparative studies of die attach properties such as wetting, void and die shear strength on bare and Ni metallized Cu lead-frame was made. Cross sectional microstructural investigation revealed that as many as three intermetallic compound (IMCs) layers form at the solder/lead-frame interface for bare Cu lead-frame. A CuZn intermetallic layer forms close to copper, a scallop shaped CuZn4 forms at the solder side, while Cu5Zn8 forms at the middle. At the interface with Si die, IMC layer could not be detected by SEM. With Ni metallized Cu lead-frame, no IMC layer was observed at the solder/lead-frame as well as Si die/solder interface by SEM. Wetting on Ni metallized Cu lead-frame was found to be lower as compared to that at bare Cu lead-frame. Die shear strength was found to be higher on bare Cu lead-frame (24.2 MPa) as compared to Ni metallized Cu lead-frame (20.5 MPa). Die shear strength of standard Pb-5Sn solder was also measured for comparison and found to be 28.2 MPa.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124159557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

A LEAN approach in processor platform validation (PPV) effective test interface unit (TIU) performance improvement 精益方法在处理器平台验证(PPV)中的有效改进测试接口单元(TIU)的性能

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746770

Chia Saw Ean, Choo Pak Kee

引用次数: 0

Interfacial reactions of SAC305 and SAC405 solders on electroless Ni(P)/immersion Au and electroless Ni(B)/immersion Au finishes SAC305和SAC405焊料在Ni(P)/ Au和Ni(B)/ Au表面的界面反应

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746712

S. Aisha, A. Ourdjini, N. M. Wah, H. C. How, Y. T. Chin

{"title":"Interfacial reactions of SAC305 and SAC405 solders on electroless Ni(P)/immersion Au and electroless Ni(B)/immersion Au finishes","authors":"S. Aisha, A. Ourdjini, N. M. Wah, H. C. How, Y. T. Chin","doi":"10.1109/IEMT.2010.5746712","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746712","url":null,"abstract":"The formation of intermetallic compounds (IMCs) on solder pads is strongly affected by the type of PCB surface finish since different finishes may lead to several different interfacial reactions and IMCs formation. Since the joint reliability is also determined by the type of the interfacial IMC layer between the solder and substrate, understanding how such intermetallic compounds form and grow during soldering and subsequent thermal ageing is essential. In this paper, experimental results of the effect of three different surface finishes namely: electroless nickel (phosphorus)/immersion gold, electroless nickel (boron)/ immersion gold and bare copper (for comparison) on the formation and growth of interfacial reactions during soldering and thermal ageing with Sn-3Ag-0.5Cu and Sn-4Ag-0.5Cu solders are presented. Several techniques of materials characterization including optical, image analysis, scanning electron microscopy and energy dispersive X-ray analysis were used to examine and quantify the intermetallics in terms of composition, thickness and morphology. The results showed that after soldering on Ni-Au finishes the reaction layer was found to consist of only one layer of (Cu, Ni)6Sn5 with a needle-shape morphology. In addition, the results from SEM with energy dispersive x-ray (EDX) have revealed that isothermal aging at 150°C has caused the thickening and coarsening of IMCs as well as changing them into more spherical shape. During soldering on Ni(B)/Au finish it was observed that closer control of the reflow temperature was very important compared to soldering on Ni(P)/Au finish. Selective etching of solder joints also revealed that the morphology of the intermetallic formed is different across a single solder joint from the centre to the outside edge.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127699285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4