Effect of Ni metallization on interfacial reactions and die attach properties of Zn-Al-Mg-Ga high temperature lead-free solder

Abstract

Interfacial reactions during Si die attachment with Zn-Al-Mg-Ga high-temperature lead (Pb)-free solder on bare Cu lead-frame (Tamac 4) and Ni metallized Cu lead-frame were investigated using an optical microscope, scanning electron microscope (SEM) and energy dispersive x-ray (EDX). Die attachment was performed in an automatic die attach machine in a forming gas environment at temperature 380°C. The back side of the die was metallized with Ti/Ni/Ag layers. Comparative studies of die attach properties such as wetting, void and die shear strength on bare and Ni metallized Cu lead-frame was made. Cross sectional microstructural investigation revealed that as many as three intermetallic compound (IMCs) layers form at the solder/lead-frame interface for bare Cu lead-frame. A CuZn intermetallic layer forms close to copper, a scallop shaped CuZn4 forms at the solder side, while Cu5Zn8 forms at the middle. At the interface with Si die, IMC layer could not be detected by SEM. With Ni metallized Cu lead-frame, no IMC layer was observed at the solder/lead-frame as well as Si die/solder interface by SEM. Wetting on Ni metallized Cu lead-frame was found to be lower as compared to that at bare Cu lead-frame. Die shear strength was found to be higher on bare Cu lead-frame (24.2 MPa) as compared to Ni metallized Cu lead-frame (20.5 MPa). Die shear strength of standard Pb-5Sn solder was also measured for comparison and found to be 28.2 MPa.