IEEE Transactions on Terahertz Science and Technology最新文献_第4页

Optically Controlled Terahertz-Wave Modulator on Substrateless Silicon Waveguide 无衬底硅波导上的光控太赫兹波调制器

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-04-20 DOI: 10.1109/TTHZ.2026.3685981

Chung Yin Tam;Panisa Dechwechprasit;Rajour Tanyi Ako;Madhu Bhaskaran;Andreas Boes;Ke Wang;Christophe Fumeaux;Withawat Withayachumnankul

{"title":"Optically Controlled Terahertz-Wave Modulator on Substrateless Silicon Waveguide","authors":"Chung Yin Tam;Panisa Dechwechprasit;Rajour Tanyi Ako;Madhu Bhaskaran;Andreas Boes;Ke Wang;Christophe Fumeaux;Withawat Withayachumnankul","doi":"10.1109/TTHZ.2026.3685981","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3685981","url":null,"abstract":"A terahertz-wave modulator is a crucial component in achieving high-speed wireless communications and advanced terahertz signal processing. Most previously realized terahertz modulators have primarily focused on wave manipulation in free space, which hardly fulfills the requirements for system-level compactness and miniaturization. This article introduces an optically controlled terahertz modulator on a substrateless silicon platform. This modulator incorporates a dipole resonator and a 1-D photonic crystal cavity to enhance the sensitivity of the terahertz waveguide to optical stimulus, achieving an enhanced modulation depth with a limited optical excitation power. This enabled us to demonstrate a modulation depth of 15.52 dB for the terahertz signal at 275.22 GHz with an optical power of 6.8 mW. While the modulation speed is 74 kHz in this work, which is limited by silicon’s long carrier lifetime, and we anticipate that the modulation frequency can reach gigahertz levels by incorporating a semiconductor with a faster recombination time. The proposed modulator topology holds substantial promise for integration into terahertz systems for wireless communications, where miniaturization, efficiency, and rapid modulation are essential.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"836-844"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Concurrent Terahertz Image Differentiation and Integration Processing via Polarization-Multiplexed Metasurface 基于偏振多路元表面的并发太赫兹图像分化与集成处理

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-04-06 DOI: 10.1109/TTHZ.2026.3681077

Linyun Luo;Qingyang Liu;Linkun Wei;Yuan Zhao;Limei Qi

{"title":"Concurrent Terahertz Image Differentiation and Integration Processing via Polarization-Multiplexed Metasurface","authors":"Linyun Luo;Qingyang Liu;Linkun Wei;Yuan Zhao;Limei Qi","doi":"10.1109/TTHZ.2026.3681077","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3681077","url":null,"abstract":"The terahertz (THz) band, often regarded as the final frontier of the electromagnetic spectrum, remains largely unexploited despite its immense potential for scientific and industrial breakthroughs. Consequently, the advancement of THz-related technologies is of paramount importance, with THz image processing emerging as a critical domain for future applications. Although THz analog image processing offers remarkable advantages over digital methods, including inherent spatial parallelism and low power consumption, existing paradigms have historically lacked effective functional concurrency—a capability fundamental to sophisticated information processing. To bridge this gap, this article proposes a THz image processor based on a polarization-multiplexed metasurface capable of performing differentiation and integration concurrently. Polarization encoding enables the processor to effectively integrate two optical transfer functions corresponding to differentiation and integration into a single-layer metasurface. Experimental results demonstrate successful differentiation and integration operations on THz images, achieving edge enhancement and denoising concurrently. This architecture paves the way for multifunctional, high-speed THz image processing technologies, holding the potential to accelerate data handling and preprocess data for digital neural network algorithms.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"777-785"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization and Interference Mitigation of a 170–200 GHz 2 × 2 MIMO System 170-200 GHz 2 × 2 MIMO系统的特性与干扰抑制

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-03-19 DOI: 10.1109/TTHZ.2026.3694208

Tao Wu;Xiao-Sheng Ni;Changjie Hu;Zebin Huang;Weichao Li;Xiongbin Yu;Xiaofeng Tao

引用次数: 0

Terahertz Optical Switches With Movable Silicon Waveguides Monolithically Fabricated on High-Resistivity Single-Crystal Silicon Substrates 在高电阻率单晶硅衬底上单片制造可移动硅波导的太赫兹光开关

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-04-16 DOI: 10.1109/TTHZ.2026.3683533

Kohei Chiba;Yoshiaki Kanamori

{"title":"Terahertz Optical Switches With Movable Silicon Waveguides Monolithically Fabricated on High-Resistivity Single-Crystal Silicon Substrates","authors":"Kohei Chiba;Yoshiaki Kanamori","doi":"10.1109/TTHZ.2026.3683533","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3683533","url":null,"abstract":"Photonic integrated circuits (PICs) based on dielectric waveguides are being developed for beyond 5G/6G communication systems. Variable passive elements, essential for PICs, present challenges for downsizing and low power consumption in the terahertz range. Variable passive elements based on microelectromechanical systems (MEMS) are promising solutions; however, the previous terahertz variable passive elements based on MEMS have complex structures processed on all layers of silicon-on-insulator (SOI) substrates. They can be fabricated on a single layer of silicon substrate, which is cheaper than an SOI substrate. However, to the best of the authors’ knowledge, there have been no demonstrations. We proposed a terahertz optical switch, which is one of the variable passive elements, based on comb-drive actuators fabricated on a single layer of silicon substrate. A comb-drive actuator was designed for 200 μm displacement at 104.5 V. An optical switch was designed for an extinction ratio of 18.9 dB at 300 GHz. The device was fabricated on a single layer of high-resistivity single-crystal silicon substrate, achieving a displacement of 185.4 μm at 93 V and an extinction ratio of 13.69 dB at 300 GHz. The optical switch part measured 5.65 mm long and power consumption was only 3.6 mW, outperforming previous works. While conventional comb-drive actuators are fabricated on SOI substrates, our design was fabricated on a single layer of silicon substrate. The proposed single-layer comb-drive actuator can be applied to variable phase shifters, directional couplers, and add/drop filters. This work addresses key challenges in terahertz variable passive elements and contributes to the advancement of terahertz PICs for beyond 5G/6G communications.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"801-812"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11482691","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Waveguide Power Divider With Zebra Chip and Isolated Output Ports for 400–510 GHz 采用斑马芯片和隔离输出端口的400-510 GHz波导分压器

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-01-12 DOI: 10.1109/TTHZ.2025.3648670

Matthias Justen;Felix Münning;Michael Schultz;Cornelia E. Honingh;Urs U. Graf

引用次数: 0

Create Change: IEEE 创造改变：IEEE

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-04-03 DOI: 10.1109/TTHZ.2026.3678673

引用次数: 0

IEEE Transactions on Terahertz Science and Technology Information for Authors IEEE太赫兹科技信息汇刊

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-04-03 DOI: 10.1109/TTHZ.2026.3678669

引用次数: 0

IEEE Microwave Theory and Techniques Society Information IEEE微波理论与技术学会信息

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-04-03 DOI: 10.1109/TTHZ.2026.3676637

引用次数: 0

High-Power Micro-Optical Bench Terahertz Quantum-Cascade Laser System 高功率微光台架太赫兹量子级联激光系统

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-02-03 DOI: 10.1109/TTHZ.2026.3660256

Robert Voigt;Martin Wienold;Xiang Lü;Lutz Schrottke;Klaus Biermann;Alexander Sahm;Katrin Paschke;Heinz-Wilhelm Hübers

引用次数: 0

Terahertz Time-Domain Spectroscopy for the Characterization of Dielectrics and Foams Using Amplitude and Phase in Reflection Mode 太赫兹时域光谱在反射模式下的振幅和相位表征电介质和泡沫

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2025-11-25 DOI: 10.1109/TTHZ.2025.3629861

Silvia Tofani;Walter Fuscaldo;Tiziana Ritacco;Romeo Beccherelli;Dimitrios C. Zografopoulos

{"title":"Terahertz Time-Domain Spectroscopy for the Characterization of Dielectrics and Foams Using Amplitude and Phase in Reflection Mode","authors":"Silvia Tofani;Walter Fuscaldo;Tiziana Ritacco;Romeo Beccherelli;Dimitrios C. Zografopoulos","doi":"10.1109/TTHZ.2025.3629861","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3629861","url":null,"abstract":"Amplitude-only measurements have recently been proposed to avoid phase sensitivity issues in terahertz (THz) time-domain spectroscopy (TDS) in reflection mode. These methods, however, are typically applied to open-boundary setups and may fail in scenarios where the Fabry–Perot interference is weak or absent. Here, we show that phase information can be essential in the characterization of low-index materials, such as dielectric foams. We address this limitation by focusing on a grounded Fabry–Perot configuration (i.e., a reflective backplane geometry), which enhances spectral features and allows for full exploitation of both amplitude and phase information. To this end, two effective protocols are developed here to accurately determine the complex permittivity of dielectric materials by exploiting both the amplitude and the phase of THz-TDS measurements. The first method fits directly the physical parameters of established permittivity dispersion models describing the unknown material by minimizing the weighted Euclidean norms of the amplitude and phase errors. This convex fitting approach improves convergence stability, especially when interference fringes are weak. The second method first estimates the optimal real permittivity values from the phase measurements, and then the loss tangent from the amplitude measurements. These mathematical values are then fitted through a suitable permittivity model to ensure causality. Both techniques are tested against materials with different dielectric properties, highlighting the case scenarios in which phase measurements significantly improve the accuracy of material dielectric characterization.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 4","pages":"384-392"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11269029","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0