IEEE Transactions on Terahertz Science and Technology最新文献

IEEE Microwave Theory and Technology Society Information 微波理论与技术学会会刊

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-06-23 DOI: 10.1109/TTHZ.2026.3700339

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The Evolving Role of Parasitic Parameters of Matched Loads in Directivity Design of Terahertz Ultra-Wideband Couplers 匹配负载寄生参数在太赫兹超宽带耦合器方向性设计中的演化作用

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-03-08 DOI: 10.1109/TTHZ.2026.3691538

Zefeng Li;Bo Zhang

{"title":"The Evolving Role of Parasitic Parameters of Matched Loads in Directivity Design of Terahertz Ultra-Wideband Couplers","authors":"Zefeng Li;Bo Zhang","doi":"10.1109/TTHZ.2026.3691538","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3691538","url":null,"abstract":"Directivity is a key performance metric for couplers. Existing research has confirmed that the parasitic parameters of a matched load influence coupler directivity, and that their constructive utilization can further enhance it. However, a critical question arises: Is this method universally applicable? Is it applicable to the terahertz frequency band? To address these questions, this article conducts an in-depth investigation into the relationship between these parasitic parameters and coupler directivity, based on the design of a 50–250 GHz microstrip coupler integrated with a matched load. The method is pushed to an extreme scenario by extending the operating frequency into the terahertz band and expanding the bandwidth to 200 GHz. Under these conditions, a fundamental role reversal of the parasitic parameters is observed: they become the primary cause of directivity degradation. Subsequent attempts to further exploit these parameters for directivity enhancement help clarify the method's inherent limitations and define its applicable boundaries. In addition, the designed 50–250 GHz coupler with over 18 dB directivity and the 50–250 GHz thin-film resistor matched load with a return loss greater than 29 dB both exhibit excellent performance and can serve as valuable references for related research.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"829-835"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Palm-Sized All-in-One Backward Terahertz-Wave Parametric Oscillator 手掌大小的一体化后向太赫兹波参量振荡器

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-03-30 DOI: 10.1109/TTHZ.2026.3679230

Yuma Takida;Kouji Nawata;Hiroaki Minamide

{"title":"Palm-Sized All-in-One Backward Terahertz-Wave Parametric Oscillator","authors":"Yuma Takida;Kouji Nawata;Hiroaki Minamide","doi":"10.1109/TTHZ.2026.3679230","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3679230","url":null,"abstract":"We have developed an over 10-W peak-power, continuously frequency tunable backward terahertz (THz)-wave parametric oscillator (BW-TPO) in a palm-sized compact package. The driving pump source of a passively Q-switched 1064-nm Nd:YAG microchip laser, the BW-TPO gain medium of a slant-stripe-type periodically poled lithium niobate (PPLN) crystal mounted on a motorized rotation stage, and all the optical components, including a simple layout for injection seeding to the idler wavelength, were assembled as an all-in-one module. To extract the backward-propagating THz-wave output that overlaps with the pump beam line, a thin LN substrate coated with 1064-nm antireflection was used as a dichroic beam splitter with a high reflectivity of more than 90% at 0.3 THz. As a result, the monochromatic THz-wave output with a maximum peak power of 15 W was obtained at 0.33 THz. By tuning the quasi-collinear phase-matching condition via mechanical rotation of the PPLN crystal, continuous frequency tunability from 0.29 to 0.35 THz was achieved. THz-wave reflection imaging measurements were performed using a scan of the whole optical setup including the developed BW-TPO module installed on a 2-axis motorized translation stage. Our results confirm that the stable and robust operation of the robot-mountable compact all-in-one BW-TPO is ready for real-world THz-wave nondestructive sensing applications.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"786-792"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11457781","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Multiband THz Sources Based on Effective-Media Suspended-Strip All-Silicon Technology for D-Band and up to 0.5 THz 基于有效介质悬带全硅技术的d波段和0.5 THz波段多波段太赫兹源

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-03-30 DOI: 10.1109/TTHZ.2026.3678155

Amr Samir;Ahmed M. Hegazy;Nick Dechev;Mohamed Basha

{"title":"Multiband THz Sources Based on Effective-Media Suspended-Strip All-Silicon Technology for D-Band and up to 0.5 THz","authors":"Amr Samir;Ahmed M. Hegazy;Nick Dechev;Mohamed Basha","doi":"10.1109/TTHZ.2026.3678155","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3678155","url":null,"abstract":"The cost and performance of electronic device integration in the terahertz (THz) regime remain key challenges toward the commercialization of communication and sensing systems operating beyond 100 GHz, especially during the research and prototyping phases. Such systems are critical for future high-throughput communication networks (e.g., 6 G sub-THz systems), as well as for applications requiring high radiation power, including material spectroscopy, space exploration, and nondestructive medical imaging. In this work, we combine the concepts of effective-medium (EM) waveguides and suspended waveguides to introduce an all-silicon multiband hybrid integration platform that supports low-loss dielectric passive components with high-quality metallic transitions, enabling off-chip active integration using low-parasitic self-aligning embedded chip packaging and ultra-short wire bonding. The proposed approach addresses current limitations in THz integration and packaging technologies by enabling broadband operation across mmWave and THz frequencies on a single silicon platform. Using deep reactive-ion-etched effective media and double-sided photolithography, extremely low in-plane substrate modal leakage is achieved, allowing multiband THz components to be integrated on the same wafer. The technology is experimentally validated through the implementation of low-power THz sources in the D-band and Y-band using hybrid integration of commercially available planar GaAs Schottky diodes in cascaded frequency multiplier configurations. The demonstrated systems achieve conversion efficiencies of 5% in the D-band and 0.063% at 0.5 THz, validating the feasibility of the proposed hybrid integration platform for multiband THz source development and proving it to be a strong candidate for low-cost, rapid prototyping of multiband THz systems.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"813-828"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A 220 GHz Filtering Slot Array Antenna Based on Micrometal Additive Manufacturing 基于微金属增材制造的220 GHz滤波槽阵天线

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-04-07 DOI: 10.1109/TTHZ.2026.3681628

Xianzhe Ma;Qinlong Li;Guanghua Shi;Sifan Wu;Cheng Guo;Zhen Wang;Zhou Chen;Xiaoming Chen

{"title":"A 220 GHz Filtering Slot Array Antenna Based on Micrometal Additive Manufacturing","authors":"Xianzhe Ma;Qinlong Li;Guanghua Shi;Sifan Wu;Cheng Guo;Zhen Wang;Zhou Chen;Xiaoming Chen","doi":"10.1109/TTHZ.2026.3681628","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3681628","url":null,"abstract":"A 220 GHz slot array antenna with an integrated filtering response is proposed based on micrometal additive manufacturing (M-MAM) technology. The bottom layer of the antenna structure is a seventh-order all-resonator 1-to-16 filtering power divider. This waveguide feed network can transfer energy to the cavity through coupling slots with the same amplitude and in phase. Then, each cavity excites a 2 × 2 radiation slot subarray at the top layer. The 2 × 2 slot subarray unit can be used to form a larger array, providing flexibility in the size of the array antenna. By using the proposed subarrays, an 8 × 8 slot array antenna is designed and fabricated in accordance with the fabrication process of M-MAM. The surface roughness using M-MAM is measured, and the effects of surface roughness on the feed network as well as array antenna have also been analyzed. Due to the low surface roughness and all metal structure, the array antenna achieves high gain, high aperture efficiency and good filtering response. The filtering array antenna using M-MAM technology is promising for sub-terahertz (sub-THz) applications.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"855-864"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Transactions on Terahertz Science and Technology Information for Authors IEEE太赫兹科技信息汇刊

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-06-23 DOI: 10.1109/TTHZ.2026.3700341

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IEEE Transactions on Terahertz Science and Technology Publication Information IEEE太赫兹科学与技术学报出版信息

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-06-23 DOI: 10.1109/TTHZ.2026.3700343

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First Analog Linearization of a 300-GHz Power Amplifier: Demonstration and Quantification 300 ghz功率放大器的首次模拟线性化：演示和量化

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-04-02 DOI: 10.1109/TTHZ.2026.3679945

Thomas Ufschlag;Benjamin Schoch;Lukas Gebert;Arnulf Leuther;Axel Tessmann;Ingmar Kallfass

{"title":"First Analog Linearization of a 300-GHz Power Amplifier: Demonstration and Quantification","authors":"Thomas Ufschlag;Benjamin Schoch;Lukas Gebert;Arnulf Leuther;Axel Tessmann;Ingmar Kallfass","doi":"10.1109/TTHZ.2026.3679945","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3679945","url":null,"abstract":"This work demonstrates the first analog linearization of a 300-GHz solid-state power amplifier module using a single class-C stage as a predistorter to counteract gain and phase compression of the main amplifier. The circuit is implemented in a 35-nm indium gallium arsenide metamorphic high-electron-mobility transistor technology, and the large-signal phase behavior of class-C biased amplifiers is characterized at submillimeter-wave frequencies for the first time. Operating the predistorter at its optimum bias improves the output-referred 1-dB compression point of the main amplifier by 1.3–3 dB across 280–317.5 GHz and shifts the <inline-formula><tex-math>$text{1} mathrm{^{circ }}$</tex-math></inline-formula> phase-compression point by 2.9 dB at <inline-formula><tex-math>$text{295} ,text{GHz}$</tex-math></inline-formula>. Under low-drive conditions, modulated measurements at 295 GHz with 1.35 GHz bandwidth show a 0.9 % error vector magnitude reduction and a 7.2 dB adjacent-channel power ratio improvement. These results set new benchmarks for analog predistortion at millimeter-wave and submillimeter-wave frequencies. Furthermore, methods for quantifying error vector magnitude via complex alignment and orthogonal projection, as well as spectral regrowth, are proposed and experimentally validated.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"768-776"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Women in Engineering IEEE工程女性

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-06-23 DOI: 10.1109/TTHZ.2026.3702316

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Wideband Circularly Polarized Small-Size Triple-Patch LTCC Antenna Array for Terahertz Applications 用于太赫兹应用的宽带圆极化小尺寸三贴片LTCC天线阵列

IF 3.6 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-07-01 Epub Date: 2026-04-10 DOI: 10.1109/TTHZ.2026.3682890

Jun Xiao;Qi Gan;Jing Wu;Chong-Zhi Han;Josaphat Tetuko Sri Sumantyo;Qiubo Ye

{"title":"Wideband Circularly Polarized Small-Size Triple-Patch LTCC Antenna Array for Terahertz Applications","authors":"Jun Xiao;Qi Gan;Jing Wu;Chong-Zhi Han;Josaphat Tetuko Sri Sumantyo;Qiubo Ye","doi":"10.1109/TTHZ.2026.3682890","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3682890","url":null,"abstract":"This article presents a compact, wideband, circularly polarized (CP) antenna array for terahertz (THz) applications using low-temperature cofired ceramic (LTCC) technology. The CP radiation is generated by a novel triple-patch element design that perturbs the electric field inside the metallic cavity, which achieves a wide axial ratio (AR) bandwidth with a miniaturized aperture. Based on the small-size and wideband antenna element, we proposed a compact and wideband synergistic architecture for constructing a CP array configuration. Detailly, a 2 × 2 subarray is constructed based on a quasi-TE330-mode substrate-integrated cavity feeding structure. The configuration minimizes the number of metallic vias and the cavity dimension, consequently enabling low-loss transmission. Owing to the small-size triple-patch CP element, a high aperture efficiency (AE) of 140% within a 0.9 × 0.9 <italic>λ2 effective aperture has been achieved. Furthermore, a 4 × 4 array is implemented by employing a sequential rotation feeding network. The measured results demonstrate an impedance bandwidth of 18.1% (0.130–0.156 THz) and a 3-dB AR bandwidth of 18.6% (0.132–0.159 THz), with a peak AE of 68%, thereby validating its applicability in sub-THz CP arrays. To demonstrate its potential for higher frequency operation, a 0.31-THz element and its corresponding 2 × 2 subarray are designed and analyzed. The proof-of-concept confirms robust performance and favorable scalability, supporting extension from sub-THz to THz CP arrays.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 7","pages":"845-854"},"PeriodicalIF":3.6,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148442306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0