{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TTHZ.2025.3582135","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3582135","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"740-740"},"PeriodicalIF":3.9,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11068938","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Terahertz Science and Technology Publication Information","authors":"","doi":"10.1109/TTHZ.2025.3582008","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3582008","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"C3-C3"},"PeriodicalIF":3.9,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11068939","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Microwave Theory and Techniques Society Information","authors":"","doi":"10.1109/TTHZ.2025.3582004","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3582004","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"C2-C2"},"PeriodicalIF":3.9,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11068958","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Terahertz Science and Technology Information for Authors","authors":"","doi":"10.1109/TTHZ.2025.3582006","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3582006","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"738-739"},"PeriodicalIF":3.9,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11068940","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A High-Gain Terahertz Metallic Modulated Metasurface Antenna With a Wide Gain Bandwidth","authors":"Jia-Hui Zhao;Chen-Yu Ding;Zhuo-Wei Miao;Stefano Maci;Zhang-Cheng Hao","doi":"10.1109/TTHZ.2025.3565204","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3565204","url":null,"abstract":"Electrically large modulated metasurface antennas (MMAs) possess the advantages of simple feeding and absence of beam forming network, while achieving a high radiation gain. However, they suffer from limitation in the gain-bandwidth product. This article introduces a technique to expand the bandwidth of gain by utilizing a polarization selective surface (PSS). The PSS can generate a more uniform phase distribution and almost identical polarized directions above the MMA to improve its radiation performance, including the realized gain, gain bandwidth, sidelobe level, and cross-polarization level. Detailed analysis is presented and discussed. For experimental verification, a <italic>D</i>-band metallic MMA loaded with a PSS is fabricated and measured. The proposed metallic MMA is manufactured by a high-precision 3-D-printed technique and metalized using the magnetron-sputtering gold coating. The measured maximum realized gain is 30.5 dBi at 131 GHz with a measured 3-dB gain bandwidth of 9%, which approaches the theoretical limit found for such antennas. The proposed MMA shows potential superiorities for developing high-gain and low-profile THz antennas, even with an operating frequency over 300 GHz.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"694-703"},"PeriodicalIF":3.9,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Application of Multipass Cell Compression to Achieve High Repetition Rate Lithium Niobate Terahertz Sources With Broadened Bandwidth","authors":"Lu-Zhen Chen;Hong-Bo Li;Dong-Liang Xie;Kai Zhang;Jing-Yin Xu;Hao-Ran Song;Hong Li;Tian-Wu Wang;Yi Qu","doi":"10.1109/TTHZ.2025.3564709","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3564709","url":null,"abstract":"The performance of high-repetition-rate (e.g., MHz) 1030-nm-pumped lithium niobate (LiNbO<sub>3</sub>) terahertz (THz) source is significantly influenced by pulse duration, intensity, and pump wavelength. In this study, we present the application of single-stage multipass cell (MPC) compression technology to compress 1030 nm laser pulses from 200 to 49 fs and investigate its impact on THz emission using the tilted pulse front method. The results show that the compressed 49 fs pulses significantly broaden the THz spectral bandwidth, shifting the center frequency from 0.5 to 0.84 THz and extending the cutoff frequency to 4.1 THz. Although shorter pulses have lower conversion efficiency compared with longer pulses (e.g., 200 fs), they generate a broader THz spectrum. This bandwidth improvement addresses the critical limitations of narrow bandwidth and low temporal resolution in current LiNbO<sub>3</sub>-based THz scanning tunneling microscopy (THz-STM) systems. By increasing the THz bandwidth, we provide an efficient approach to achieve better temporal resolution and more affluent spectral information in THz-STM systems. This study demonstrates the potential of MPC compression technology to significantly enhance THz bandwidth in LiNbO<sub>3</sub> crystals, paving the way for more accurate material analysis, imaging, and characterization using THz-STM.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"642-649"},"PeriodicalIF":3.9,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10978068","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 220 GHz Reconfigurable Reflectarray Antenna Using GaN HEMT Device","authors":"Xiaotian Pan;Fan Yang;Fengfeng Liu;Chunping Jiang;Shenheng Xu","doi":"10.1109/TTHZ.2025.3563715","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3563715","url":null,"abstract":"Reconfigurable reflectarray antennas (RRAs) at submillimeter and terahertz frequencies are critical for communications and imaging applications. This article examines, fabricates, and measures an RRA integrated with a gallium nitride (GaN) high electron mobility transistor (HEMT) device, operating at 220 GHz. A reflectarray element on a sapphire substrate, incorporating a GaN HEMT device and a matching circuit, is designed to achieve a 1-bit phase shift of the reflected wave. Detailed analyses of the HEMT device model and the submillimeter element design are conducted. The proposed RRA is fabricated using standard chip processes, resulting in a 16 × 16 element array on an 11.2 × 11.2 × 0.1 mm<sup>3</sup> chip. The 1-bit phase-shift performance is validated through two-state reflection coefficient measurements. Due to the fabrication challenges of element control, a column-control biasing network is implemented. The 1-D beam-scanning capability of the RRA prototype is experimentally demonstrated at 220 GHz, achieving a scanning angle of up to 40°. The experimental results demonstrate strong agreement with theoretical predictions.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"704-714"},"PeriodicalIF":3.9,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pierre Koleják;Jiaming Liu;Robin Silber;Martin Mičica;Ondřej Ballada;Čestmír Barta;Romain Lebrun;Nicolas Tiercelin;Mathias Vanwolleghem;Kamil Postava
{"title":"Terahertz Time-Domain Ellipsometry With Spintronic Emitters: Pauli Coefficients as a Superior Alternative to Jones and Mueller Matrices","authors":"Pierre Koleják;Jiaming Liu;Robin Silber;Martin Mičica;Ondřej Ballada;Čestmír Barta;Romain Lebrun;Nicolas Tiercelin;Mathias Vanwolleghem;Kamil Postava","doi":"10.1109/TTHZ.2025.3559074","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3559074","url":null,"abstract":"In this article, we introduce terahertz complete time-domain spectroscopic ellipsometry (THz-cTDSE), extending traditional ellipsometry by determining full Jones and Mueller matrices for in-depth material characterization. This marks the first application of spintronic terahertz emitters in ellipsometry, achieving pure linear polarization for precise magnetization-based switching. Our complete phase-resolved ellipsometry transforms Jones matrices into an intuitive framework of diattenuations and retardations across all Stokes bases—Pauli exponential coefficients—previously unattainable with incomplete ellipsometry. A novel calibration technique ensures accurate Jones matrix reconstruction without requiring precise alignment of polarizing components, approaching the precision typical of visible-range ellipsometry. We demonstrate THz-cTDSE on quartz and Hg<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>Cl<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> crystals, advancing the analysis of anisotropic materials.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"606-621"},"PeriodicalIF":3.9,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10964355","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Migration and Accumulation Behavior of Moisture in Insulating Pressboard Under AC Field by Terahertz Imaging Technology","authors":"Meicun Kang;Lijun Yang;Yuxin He;Li Cheng;Hao Luo","doi":"10.1109/TTHZ.2025.3557318","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3557318","url":null,"abstract":"Moisture content is a decisive factor for the electrical performance of oil–paper insulation. As a strongly polar substance, moisture can easily accumulate in areas with high field strength, distorting the local electric field and triggering electrical discharges. However, due to the lack of suitable nondestructive observation means, no experimental and observational studies have been conducted on the effect of the electric field on the migration and aggregation behavior of moisture in insulating pressboard. In this work, a terahertz imaging technique is introduced to observe the diffusive migration of moisture in insulating pressboard and focus on the effect of the ac electric field on this process. Results show that moisture migration in insulating pressboard consists of two parts: migration from solid-phase insulating pressboard to liquid-phase insulating oil and migration occurring in solid-phase insulating pressboard. The addition of the ac electric field considerably increases the diffusion rate of moisture and accelerates the migration of moisture from the solid phase to the liquid phase. Moreover, the electric field makes the moisture in the solid-phase pressboard migrate and accumulate toward the high-field-strength region near electrodes, and this process is accelerated by the increase in temperature. Under the experimental conditions of this study, the maximum relative deviation between the moisture content in the pressboard near both sides of the electrode and the average moisture content is 34.7%.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"622-633"},"PeriodicalIF":3.9,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sara Vega;Daniel Nuño;Yi Chang;Juan Sebastian Gómez-Díaz;María Santos
{"title":"On the Influence of Fabrication Tolerances in Terahertz Photoconductive Antennas","authors":"Sara Vega;Daniel Nuño;Yi Chang;Juan Sebastian Gómez-Díaz;María Santos","doi":"10.1109/TTHZ.2025.3558962","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3558962","url":null,"abstract":"We present a study of the radiation pattern of photoconductive antennas (PCA) subject to substrate chip defects, aiming at characterizing fabrication tolerances. We show that the asymmetries observed over the crosspolar radiation patterns may be exploited to numerically estimate the most prominent trends of the substrate chip geometrical imperfections. A figure of merit (FoM) has been defined, characterized, and validated through simulations and experimental measures, proving it is sensitive to both the magnitude and location of the substrate irregularities. The study has been focused on two kinds of substrate defects, the angled dicing and the off-centered antenna gap, and it has considered three planar antenna geometries: dipole, bow-tie and Sierpinski triangle dipole. A numerical antenna factor related to the planar antenna geometry imprinted over the substrate is included in the FoM expression for fair comparison of substrate irregularities among PCAs with different metallic patterns. A simple setup for experimentally obtaining the value of the FoM through collimated beam raster scanning measure of the crosspolar radiation pattern has been proved useful to validate the practical relevance of the FoM. These values asses the substrate chip fabrication quality and help to identify the position and magnitude of the substrate defects that have the greatest impact on the PCA performance.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 4","pages":"634-641"},"PeriodicalIF":3.9,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}