A 220 GHz Reconfigurable Reflectarray Antenna Using GaN HEMT Device

IF 3.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-04-23 DOI:10.1109/TTHZ.2025.3563715

Xiaotian Pan;Fan Yang;Fengfeng Liu;Chunping Jiang;Shenheng Xu

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引用次数: 0

Abstract

Reconfigurable reflectarray antennas (RRAs) at submillimeter and terahertz frequencies are critical for communications and imaging applications. This article examines, fabricates, and measures an RRA integrated with a gallium nitride (GaN) high electron mobility transistor (HEMT) device, operating at 220 GHz. A reflectarray element on a sapphire substrate, incorporating a GaN HEMT device and a matching circuit, is designed to achieve a 1-bit phase shift of the reflected wave. Detailed analyses of the HEMT device model and the submillimeter element design are conducted. The proposed RRA is fabricated using standard chip processes, resulting in a 16 × 16 element array on an 11.2 × 11.2 × 0.1 mm³ chip. The 1-bit phase-shift performance is validated through two-state reflection coefficient measurements. Due to the fabrication challenges of element control, a column-control biasing network is implemented. The 1-D beam-scanning capability of the RRA prototype is experimentally demonstrated at 220 GHz, achieving a scanning angle of up to 40°. The experimental results demonstrate strong agreement with theoretical predictions.

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基于GaN HEMT器件的220 GHz可重构反射天线

亚毫米和太赫兹频率的可重构反射天线（RRAs）对于通信和成像应用至关重要。本文研究、制造和测量了一个集成了氮化镓（GaN）高电子迁移率晶体管（HEMT）器件的RRA，工作频率为220 GHz。蓝宝石衬底上的反射元件，结合GaN HEMT器件和匹配电路，设计用于实现反射波的1位相移。对HEMT器件模型和亚毫米元件设计进行了详细分析。所提出的RRA采用标准芯片工艺制造，在11.2 × 11.2 × 0.1 mm3芯片上形成16 × 16元件阵列。通过双态反射系数测量验证了1位相移性能。由于元件控制在制造上的困难，我们设计了一种柱控偏置网络。实验证明了RRA原型在220 GHz下的一维波束扫描能力，实现了高达40°的扫描角度。实验结果与理论预测非常吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Terahertz Science and Technology ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

7.10

自引率

9.40%

发文量

102

期刊介绍： IEEE Transactions on Terahertz Science and Technology focuses on original research on Terahertz theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of Terahertz waves.