IEEE Transactions on Terahertz Science and Technology最新文献_第3页

Design of a D-Band Multiply-by-9 Frequency Multiplier Chain in 16 nm p-FinFET Technology With Waveform Modeling 16 nm p- finet技术中d波段乘9倍频倍频链的设计及波形建模

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-14 DOI: 10.1109/TTHZ.2025.3588765

Runzhou Chen;Hao-Yu Chien;Mau-Chung Frank Chang

{"title":"Design of a D-Band Multiply-by-9 Frequency Multiplier Chain in 16 nm p-FinFET Technology With Waveform Modeling","authors":"Runzhou Chen;Hao-Yu Chien;Mau-Chung Frank Chang","doi":"10.1109/TTHZ.2025.3588765","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3588765","url":null,"abstract":"This work presents the design and analysis of a compact D-band × 9 frequency multiplier chain, using taiwan semiconductor manufacturing company limited (TSMC) 16 nm technology with the radio frequency (RF) p-FinFET device. The unique high <inline-formula><tex-math>$mathbf {f_{max}}$</tex-math></inline-formula> feature of the p-FinFET device sets the foundations for this design. To accommodate the short-channel effects in the fin field-effect transistor (FinFET) devices, a time domain double-clipped piece-wise linear model is proposed to analyze the current waveform of the frequency tripler, which proves to be accurate in predicting the harmonic generation behavior of FinFET by comparing with the simulation. The optimal load impedance and the matching conditions at 3f<inline-formula><tex-math>$_{0}$</tex-math></inline-formula> are also examined to improve the efficiency. The frequency multiplier chain consists of an inductor-less active balun for single-to-differential conversion and mismatch compensation, two frequency tripler cells, an interstage amplifier, and a two-stage driving amplifier at the output. The proposed model was applied to find the optimal bias condition when designing the frequency triplers. The proposed multiplier was measured under two bias conditions; the first achieves a conversion gain of 1.6 dB, a <inline-formula><tex-math>$mathbf {P_{sat}}$</tex-math></inline-formula> of -2.8 dBm and a harmonic rejection ratio of 44 dBc while consuming 58 mW dc power. The second bias point achieves a higher conversion gain and <inline-formula><tex-math>$mathbf {P_{sat}}$</tex-math></inline-formula> at 4.7 and 1.8 dBm with 102 mW dc power. The multiplier chip occupies a core area of only 0.068 <inline-formula><tex-math>$mathbf {mm^{2}}$</tex-math></inline-formula> and the phase noise degradation is 19.8 dB at 1-MHz frequency offset.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"864-876"},"PeriodicalIF":3.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An LTCC-Based Antenna Array With Densified Self-Sequential Rotation Feeding Configuration for Circularly Polarized Terahertz Communications 圆极化太赫兹通信中基于ltcc的致密自序贯旋转馈电天线阵列

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-14 DOI: 10.1109/TTHZ.2025.3588749

Jun Xiao;Jing Wu;Tongyu Ding;Chong-Zhi Han;Qiubo Ye

{"title":"An LTCC-Based Antenna Array With Densified Self-Sequential Rotation Feeding Configuration for Circularly Polarized Terahertz Communications","authors":"Jun Xiao;Jing Wu;Tongyu Ding;Chong-Zhi Han;Qiubo Ye","doi":"10.1109/TTHZ.2025.3588749","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3588749","url":null,"abstract":"In this article, a low-temperature cofired ceramic-based E-shaped planar inverted-F antenna is proposed for circularly polarized (CP) at D-band (110—170 GHz). For stable CP radiation characteristic, a densified self-sequential rotation feeding technique is applied for 2 × 2 subarray. Certain perturbance of field distribution is achieved by arranging the coupling feed disks properly. Hence, a TE410-mode/quasi-TE330 high-order-mode substrate integrated waveguide cavity is excited with four coupling feeding slots properly arranged to obtain equal amplitudes and sequential 90°-phase shifts, which can be deemed as high-order-mode-based densified self-sequential rotation feeding (HOM-DSRF) configuration. Thanks to the proposed HOM-DSRF configuration, the overall dimension of the 2 × 2 CP subarray is only 1.05<italic>λ × 1.05<italic>λ with a simulated aperture efficiency up to 96%, which is significantly superior to conventional sequentially rotation feeding methods in terms of overall dimension and aperture efficiency. Finally, a 4 × 4 antenna array is designed, fabricated, and measured. The measured impedance bandwidth and 3-dB axial ratio bandwidth are 10.4% from 145.7 to 161.7 GHz and 10.5% from 144 to 160 GHz, respectively. The measured peak gain is 15.1 dBic, with measured aperture efficiency up to 71%. The measured results agree well with the simulated ones. The proposed HOM-DSRF configuration has potential applications for terahertz CP antenna array designs.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"934-939"},"PeriodicalIF":3.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144997976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultra-Fast Low-Loss SPST Switch Using Planar GaAs Diodes for $G$-Band Radar Receiver Protection 使用平面砷化镓二极管的超高速低损耗SPST开关用于G波段雷达接收机保护

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-10 DOI: 10.1109/TTHZ.2025.3588046

Sven van Berkel;Alain E. Maestrini;Robert Lin;Choonsup Lee;Goutam Chattopadhyay;Raquel Rodriguez Monje;Ken B. Cooper

{"title":"Ultra-Fast Low-Loss SPST Switch Using Planar GaAs Diodes for $G$-Band Radar Receiver Protection","authors":"Sven van Berkel;Alain E. Maestrini;Robert Lin;Choonsup Lee;Goutam Chattopadhyay;Raquel Rodriguez Monje;Ken B. Cooper","doi":"10.1109/TTHZ.2025.3588046","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3588046","url":null,"abstract":"In this article, we report on the development of a high-performance, tunable, solid-state, single-pole-single-throw (SPST) switch operating in <inline-formula><tex-math>$G$</tex-math></inline-formula>-band for radar applications. Future space-borne, high-power <inline-formula><tex-math>$G$</tex-math></inline-formula>-band radars may require an SPST switch for receiver protection. We explore a novel solid-state switching architecture based on planar GaAs Schottky diodes. The switch, optimized for operation from 158 to 175 GHz, achieves high isolation by absorbing, reflecting, and frequency multiplying the input power to the second harmonic. A first demonstrator is characterized with an <sc>on-state insertion loss <0.86>20 dB at 0 dBm input power. The <sc>off-state isolation exceeds 43 dB at 0 dBm input power and remains above 30 dB at +17 dBm input power. Depending on the required isolation, the switch is tunable with an instantaneous bandwidth ranging from 300 MHz (for 30 dB isolation) to 13 GHz (for 15 dB isolation). The switch is successfully demonstrated to operate at an ultra-fast 4 MHz switching rate with a switching speed of a few nanoseconds.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"852-863"},"PeriodicalIF":3.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a Two-Beam Terahertz FMCW Walk-Through Body Scanner for Seamless Security Screening 用于无缝安全检查的两束太赫兹FMCW步行全身扫描仪的研制

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-03 DOI: 10.1109/TTHZ.2025.3585672

Tomofumi Ikari;Yoshiaki Sasaki;Chiko Otani

引用次数: 0

TechRxiv: Share Your Preprint Research with the World! techxiv：与世界分享你的预印本研究！

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-03 DOI: 10.1109/TTHZ.2025.3582135

引用次数: 0

IEEE Transactions on Terahertz Science and Technology Publication Information IEEE太赫兹科学与技术学报出版信息

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-03 DOI: 10.1109/TTHZ.2025.3582008

引用次数: 0

Analytical Modeling, Simulation, and Cold Testing of a Radial SWS for THz Applications 太赫兹应用中径向SWS的分析建模、仿真和冷测试

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-03 DOI: 10.1109/TTHZ.2025.3585674

Atif Jameel;Zhanliang Wang;Jibran Latif;Muhammad Khawar Nadeem;Syed Aziz Shah;Bilawal Ali;Yubin Gong

{"title":"Analytical Modeling, Simulation, and Cold Testing of a Radial SWS for THz Applications","authors":"Atif Jameel;Zhanliang Wang;Jibran Latif;Muhammad Khawar Nadeem;Syed Aziz Shah;Bilawal Ali;Yubin Gong","doi":"10.1109/TTHZ.2025.3585674","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3585674","url":null,"abstract":"This article presents the analytical design, simulation, and cold-test validation of a radial slow-wave structure for terahertz applications, addressing the limitations of conventional axial designs. Radial vacuum electron devices enhance the interaction area, reduce space charge effects, and enable compact, magnetic field-free operation, making them well-suited for high-power THz sources. A mathematical framework is developed to derive dispersion equations for the radial configuration, and numerical simulations to analyze the dispersion characteristics, external quality factor, and interaction impedance. A radial backward wave oscillator (BWO) is designed to validate the analytical model at 0.65 THz. Its performance is evaluated through particle-in-cell simulations, which model the interaction between the diverging radial sheet electron beam and the electromagnetic wave. The particle simulation confirms that the radial BWO operates without an external magnetic field, achieving a peak output power of 46.4 W at 0.651 THz using a 20.2-kV, 400-mA electron beam. A matched TEM-TE<inline-formula><tex-math>$_{10}$</tex-math></inline-formula> mode converter is designed to extract the RF power efficiently for practical applications. The proposed BWO, comprising 40 periods and an integrated mode converter, is fabricated with precise surface finishing, dimensional accuracy, and compatibility with THz operational requirements. The cold test of the BWO with the mode converter shows an S<inline-formula><tex-math>$_{11}$</tex-math></inline-formula> parameter of approximately −13 dB at the desired frequencies, closely matching the simulated results. These findings highlight the potential of radial BWO as compact, high-power THz sources, enabling stable and efficient operation for advanced applications.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"903-913"},"PeriodicalIF":3.9,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Microwave Theory and Techniques Society Information IEEE微波理论与技术学会信息

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-03 DOI: 10.1109/TTHZ.2025.3582004

引用次数: 0

IEEE Transactions on Terahertz Science and Technology Information for Authors IEEE太赫兹科技信息汇刊

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-07-03 DOI: 10.1109/TTHZ.2025.3582006

引用次数: 0

Robust Unclad Terahertz Waveguides and Integrated Components Enabled by Multimode Effects and Matched Slot Couplers 由多模效应和匹配槽耦合器实现的鲁棒无包层太赫兹波导和集成元件

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2025-06-27 DOI: 10.1109/TTHZ.2025.3583912

Daniel Headland;Guillermo Carpintero

{"title":"Robust Unclad Terahertz Waveguides and Integrated Components Enabled by Multimode Effects and Matched Slot Couplers","authors":"Daniel Headland;Guillermo Carpintero","doi":"10.1109/TTHZ.2025.3583912","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3583912","url":null,"abstract":"We address critical physical fragility issues associated with terahertz integrated all-silicon substrateless devices. This is necessary because, although the current state-of-the-art offers excellent electromagnetic performance, real-world deployment is currently held back by structural weaknesses. One such example is the input coupler, which has previously taken the form of an exposed taper that reduces core dimensions over several wavelengths, and is vulnerable to breakage. This is replaced with a compact subwavelength slot-waveguide coupler, which exploits reflection-cancellation as opposed to a progressive transition. The other key structural weakness is the in-plane integrated support that physically suspends the substrateless waveguide's core, and this is addressed with multimode effects that localize a field null to the point of contact with a solid supporting beam. The resultant robust waveguide platform exhibits a working relative bandwidth of <inline-formula><tex-math>$sim$</tex-math></inline-formula>31%, which is sufficient for terahertz communications in standard allocated bands. Multimode effects are also exploited to realize an integrated photonic 2 × 2 splitter, which is incidentally the first demonstration of an integrated dielectric multimode interferometer splitter in the terahertz range.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"885-893"},"PeriodicalIF":3.9,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11054290","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0