{"title":"IEEE Transactions on Terahertz Science and Technology Information for Authors","authors":"","doi":"10.1109/TTHZ.2024.3482634","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3482634","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 6","pages":"888-889"},"PeriodicalIF":3.9,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10742498","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Teppei Yonetsu;Hiroyuki Maezawa;Yudai Matsumoto;Takuto Oda
{"title":"Application of Millimeter-Wave Heterodyne Spectroscopy With a Superconducting Receiver for Dusty Plasma Diagnostics","authors":"Teppei Yonetsu;Hiroyuki Maezawa;Yudai Matsumoto;Takuto Oda","doi":"10.1109/TTHZ.2024.3488353","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3488353","url":null,"abstract":"Diagnosing the physical and chemical states of minor constituents in dusty plasma, including their temperature and abundance, is challenging. In this research, the spectral lines of HCN formed in capacitively coupled plasma (CCP) were measured by 0.17–0.19-THz band heterodyne spectroscopy using a superconductor/insulator/superconductor receiver and a new modified chopper-wheel calibration technique. The rotational temperature of N\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000 determined by optical emission spectroscopy is approximately 310–380 K, which is similar to the kinetic temperature of the plasma gas, while the rotational temperature of HCN is estimated to be approximately 400–570 K. This suggests that the HCN in the observation field of view contains components affected by high-energy physical processes such as sputtering and photochemistry during the formation process. This passive heterodyne spectroscopic technique in the millimeter to THz frequency band will provide a useful tool for diagnosing the physical and chemical conditions of dusty plasma.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"17-27"},"PeriodicalIF":3.9,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10738471","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vasily V. Gerasimov;Ildus Sh. Khasanov;Valeria D. Kukotenko;Alexey G. Lemzyakov;Artem I. Ivanov;Irina V. Antonova;Aleksandr G. Cherevko
{"title":"Terahertz Surface Plasmon Refractometry of Composite Graphene Nanoparticle Films","authors":"Vasily V. Gerasimov;Ildus Sh. Khasanov;Valeria D. Kukotenko;Alexey G. Lemzyakov;Artem I. Ivanov;Irina V. Antonova;Aleksandr G. Cherevko","doi":"10.1109/TTHZ.2024.3485870","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3485870","url":null,"abstract":"Graphene is one of the most promising materials for terahertz (THz) plasmonics. Composite layers composed of graphene nanoparticles are easier to fabricate, and their composition variability allows for the customization of desired optical surface characteristics. This study is the first to apply THz surface plasmon refractometry methods to investigate composite films of graphene nanoparticles (with poly-34-ethylenedioxythiophene/ polystyrene sulfonate additive) with thicknesses of 35 and 400 nm. The Novosibirsk free-electron laser, generating monochromatic wavelength-tunable coherent radiation, was used as a THz radiation source. The measurement of the effective dielectric permittivity of the layers at wavelengths of 141 and 197 μm indicated their good conductive properties. Results of the comparison of permittivity for different thicknesses of graphene layers have revealed a complex mechanism of conductivity of the composite material, which differs significantly from the Drude model estimations. So, further thorough experimental research of this material is required. The main results suggest the potential application of composite graphene films hundreds of nanometers thick in plasmonic integrated circuits and THz frequency range communication lines.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"61-68"},"PeriodicalIF":3.9,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guoxiang Shu;Huaxing Pan;Xinlun Xie;Shaocheng Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Cunjun Ruan;Wenlong He
{"title":"Study of Magnetic Focusing Structures for 220 GHz Sheet Beam Traveling Wave Tubes","authors":"Guoxiang Shu;Huaxing Pan;Xinlun Xie;Shaocheng Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Cunjun Ruan;Wenlong He","doi":"10.1109/TTHZ.2024.3484953","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3484953","url":null,"abstract":"The study of three types of magnetic focusing structures for terahertz band sheet beam traveling wave tubes is presented in this article. Although there are a lot of reported literatures regarding the study of magnetic focusing structures, most of them just focused on a single type of focusing structure and lack of systematic research (for example, only simulation study), with a limited discourse on the comparative performance across different types of focusing structures. In addition, many reported simulations regarding the focusing structures are normally based on the ideal electron beam, resulting in reduced simulation accuracy to some extent. In this article, three types of focusing structures (uniform magnetic (UM) / pole offset periodic cusped magnetic (PO-PCM)/PCM-tunable quadrupolar magnet focusing structures) are studied in detail by theoretical analysis and simulation design. The PO-PCM focusing structure is experimentally studied as a representative. Simulation results based on the electron beam emitted from the designed sheet beam electron gun show that a stable long-distance transmission over 112 mm and 85 mm can be achieved with the UM focusing structure and the PCM focusing structures, respectively. To verify the design, the microfabrication and test of the PO-PCM focusing structure is carried out as a representative. The measured magnetic field matches well with its simulated and theoretically calculated counterparts. The beam-wave interaction cosimulation results based on different focusing structures have a discrepancy among them.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"120-127"},"PeriodicalIF":3.9,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique","authors":"Xiaolin Hao;Ao Zhang;Guodong Gu;Shixiong Liang;Xubo Song;Lisen Zhang;Peng Xu;Jianjun Gao;Zhihong Feng","doi":"10.1109/TTHZ.2024.3481959","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3481959","url":null,"abstract":"GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The \u0000<sc>on</small>\u0000-state and \u0000<sc>off</small>\u0000-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"100-106"},"PeriodicalIF":3.9,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xavier Romain;Peter R. Wilshaw;Rayko I. Stantchev;Tina Miao;Sen Mou;Tim Niewelt;Shona McNab;Sophie L. Pain;Nicholas E. Grant;Ruy S. Bonilla;Emma Pickwell-MacPherson;John D. Murphy
{"title":"Electrically Tunable Si-Based THz Photomodulator Using Dielectric/Polymer Surface Gating","authors":"Xavier Romain;Peter R. Wilshaw;Rayko I. Stantchev;Tina Miao;Sen Mou;Tim Niewelt;Shona McNab;Sophie L. Pain;Nicholas E. Grant;Ruy S. Bonilla;Emma Pickwell-MacPherson;John D. Murphy","doi":"10.1109/TTHZ.2024.3477983","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3477983","url":null,"abstract":"Silicon-based terahertz (THz) photomodulators suffer from a modulation speed limited by the lifetime of the charge carriers photoexcited in the silicon. We report a silicon-based THz photomodulator scheme offering real-time reconfiguration of the switching behavior by manipulation of effective charge carrier lifetime. Atomic layer deposition was used to coat silicon samples with dielectric layers to passivate the surfaces with a conductive polymer subsequently deposited to enable electrical gating over the whole surface. The resulting gated photomodulators are characterized using photoconductance decay and photoluminescence imaging. A gated photomodulator with HfO\u0000<sub>2</sub>\u0000 passivation is then implemented into a THz time domain spectroscopy setup to demonstrate the potential for live photomodulation optimization during a single-pixel imaging experiment. We use the device to achieve a real-time improvement of the signal-to-noise ratio of the images by a factor of 8.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"76-83"},"PeriodicalIF":3.9,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Separation of Loss Mechanisms in Nb Superconducting Thin-Film Transmission Lines","authors":"Wenlei Shan;Shohei Ezaki","doi":"10.1109/TTHZ.2024.3477914","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3477914","url":null,"abstract":"Transmission losses in Nb superconducting coplanar waveguide (CPW) and microstrip lines were quantified at 2-mm wavelength and 3.3 K using a network analyzer. The loss measurement utilized both half-wavelength resonators and electrically long transmission lines. Validation of the measurement was achieved using a silicon membrane-based waveguide-to-CPW transition with low return loss across a broad bandwidth. Intrinsic losses were measured within a parametric space defined by frequency, temperature, signal power, and magnetic field. The multidimensional information allowed the breakdown of overall losses into major components, including quasiparticle loss, two-level system dielectric loss, vortex flow loss, and radiation loss. The performance of these transmission lines was extrapolated into the terahertz range based on these findings.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 2","pages":"158-168"},"PeriodicalIF":3.9,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143553037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Behnam Mirzaei;Jose R. G. Silva;Willem-Jan Vreeling;Wouter M. Laauwen;Dingding Ren;Jian-Rong Gao
{"title":"Reduced Noise Temperatures of a THz NbN Hot Electron Bolometer Mixer","authors":"Behnam Mirzaei;Jose R. G. Silva;Willem-Jan Vreeling;Wouter M. Laauwen;Dingding Ren;Jian-Rong Gao","doi":"10.1109/TTHZ.2024.3475010","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3475010","url":null,"abstract":"In this article, we measure the double sideband (DSB) receiver noise temperature (\u0000<inline-formula><tex-math>$T_{text{rec}}^{text{DSB}})$</tex-math></inline-formula>\u0000 of an NbN hot electron bolometer (HEB) mixer at three local oscillator frequencies of 1.6, 2.5, and 5.3 THz. The HEB has cleaned contact interfaces with a 200-nm-thick Au layer. The measured \u0000<inline-formula><tex-math>$T_{text{rec}}^{text{DSB}}$</tex-math></inline-formula>\u0000 values are 530 ± 11 K, 640 ± 18 K, and 2190 ±150 K at 1.6, 2.5, and 5.3 THz, respectively, using an air setup with total optical losses of 2.60 ± 0.04, 2.63 ± 0.16, and 4.70 ± 0.24 dB, respectively. We derived low mixer noise temperatures (\u0000<inline-formula><tex-math>$T_{text{mixer}}^{text{DSB}})$</tex-math></inline-formula>\u0000 of 240 ± 6 K at 1.6 THz and 290 ± 13 K at 2.5 THz, achieving over 30% improvement compared to published NbN HEB mixers. This enhancement can reduce the integration time of a heterodyne instrument by roughly a factor of 2. At 5.3 THz, \u0000<inline-formula><tex-math>$T_{text{mixer}}^{text{DSB}}$</tex-math></inline-formula>\u0000 is 620 ± 55 K, showing limited improvement due to nonoptimized antenna geometry. These results also contribute to understanding the device physics of a wide HEB (4 μm) at high frequencies. The mixer was developed for the proposed Orbiting Astronomical Satellite for Investigating Stellar Systems and Single Aperture Large Telescope for Universe Studies (concept) missions.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"91-99"},"PeriodicalIF":3.9,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Method for Measuring the Complex Refractive Index of Low-Volume Materials Using Integrated Terahertz Time-Domain Transmissometry","authors":"Raphaël Pederiva;Philippe Artillan;Clément Geffroy;Christopher Bäuerle;Jean-François Roux","doi":"10.1109/TTHZ.2024.3475041","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3475041","url":null,"abstract":"This study presents the development of an on-chip terahertz characterization process for low-volume or thin-film materials. A time-domain method based on the transmission of picosecond electrical pulses through the material to be characterized is proposed to determine the complex refractive index of materials up to hundreds of gigahertz. We demonstrate the capability of this method by determining the complex refractive index of a 15 nL droplet of glycerol over the 50–550 GHz frequency range.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"69-75"},"PeriodicalIF":3.9,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Alain Eric Maestrini;Jose V. Siles;Choonsup Lee;Robert Lin;Imran Mehdi
{"title":"A 2 THz Room Temperature Bias-Able Schottky Mixer","authors":"Alain Eric Maestrini;Jose V. Siles;Choonsup Lee;Robert Lin;Imran Mehdi","doi":"10.1109/TTHZ.2024.3472294","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3472294","url":null,"abstract":"We report on the design, fabrication, and characterization of a fully solid-state room-temperature compact heterodyne receiver front-end working at 1.90–2.06 THz with 4000K–6000K double side band equivalent noise temperature. The receiver front-end is based on a novel gallium arsenide (GaAs) Schottky subharmonic mixer featuring a bias-able antiparallel pair of diodes monolithically integrated on a thin GaAs membrane and a frequency multiplier chain at 1.03 THz that produces ∼1.5 mW of power. This mixer topology provides inherent benefits, such as ability to balance the two diodes and robustness vis-à-vis waveguide dimensions and packaging. The room-temperature sensitivity of this heterodyne receiver sets a new milestone for Schottky receivers and opens the possibility for resolving the emission of atomic oxygen in Earth's atmosphere.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 2","pages":"169-180"},"PeriodicalIF":3.9,"publicationDate":"2024-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143553036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}