IEEE Transactions on Terahertz Science and Technology最新文献_第5页

Phase Locking a 4.7-THz Quantum Cascade Laser to a Stable Laboratory Synthesizer 4.7太赫兹量子级联激光器锁相稳定实验室合成器

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-03-13 DOI: 10.1109/TTHZ.2026.3670539

Sajjad Mahdizadeh;Matthias Justen;Urs U. Graf;Jürgen Stutzki

{"title":"Phase Locking a 4.7-THz Quantum Cascade Laser to a Stable Laboratory Synthesizer","authors":"Sajjad Mahdizadeh;Matthias Justen;Urs U. Graf;Jürgen Stutzki","doi":"10.1109/TTHZ.2026.3670539","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3670539","url":null,"abstract":"We demonstrate phase locking of a 4.7 THz distributed feedback quantum cascade laser (QCL) to a stable laboratory synthesizer. The QCL operates at 4747.9 GHz with 1 mW output power, mounted on the first stage of a pulse-tube cryocooler with mechanical dampers. Despite residual mechanical vibrations, the QCL radiation is successfully coupled out through a series of cold and warm mirrors and focused onto a room-temperature superlattice diode (SLD). The SLD is pumped by a 182.6 GHz signal from a diode frequency multiplier chain and generates the 26th harmonic at 4748.2 GHz for harmonic mixing as a phase reference. This produces a 327 MHz intermediate frequency that is amplified, filtered, and fed to a balanced diode mixer phase detector. The phase-locked loop (PLL) employs a loop filter to generate correction signals for QCL current adjustment, reducing the unlocked linewidth from approximately 10 MHz to 1 Hz (limited by resolution bandwidth of the spectrum analyzer). In addition of providing absolute frequency reference and ability of introducing fine frequency steps, the system demonstrates remarkable robustness, maintaining phase lock for several hours and even under low signal-to-noise conditions such as 1 dB of signal over noise at 3 MHz resolution bandwidth. This robustness comes from tailored PLL design, incorporating a diode ring mixer as a phase detector and a linear phase narrowband filter, and proves its suitability for practical heterodyne array receivers targeting the [OI] line at 4.7 THz.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 4","pages":"476-481"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Women in Engineering IEEE工程女性

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-04-03 DOI: 10.1109/TTHZ.2026.3678671

引用次数: 0

50 mm × 50 mm Cesium Atomic Vapor Cell for Terahertz Imaging: Implementation and Application 用于太赫兹成像的50mm × 50mm铯原子蒸汽电池：实现与应用

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2025-12-18 DOI: 10.1109/TTHZ.2025.3646034

Bin Zhang;Jun Wan;Tao Li;Xianzhe Li;Yu Wu;Qirong Huang;Xinyu Yang;Wei Huang;Kaiqing Zhang;Haixiao Deng

引用次数: 0

Terahertz Metasurface Temperature Sensor Based on the Integration of Gallium Nitride and High-Temperature-Annealed Strontium Titanate 基于氮化镓和高温退火钛酸锶集成的太赫兹超表面温度传感器

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2025-12-03 DOI: 10.1109/TTHZ.2025.3639513

Xin Yan;Xing Yu Zhang;Xiao Fei Hu;Zhen Hua Li;Lan Ju Liang;Hai Yun Yao;Zi Qun Wang;Hao Meng;Zhao Qing Sun;Wang Zhen Dong;Yong Gang Zhang;Zhao Yang Shi;Fei Huai;Jin Tao Wu;Zhang Zhang

引用次数: 0

1550-Nm-Pumped InAs-Based Terahertz Modulator Integrated in a WR1.0 Waveguide 集成在WR1.0波导中的1550nm泵浦inas基太赫兹调制器

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-01-12 DOI: 10.1109/TTHZ.2026.3652817

Julien Guise;Hajasoa Ratovo;Fernando Gonzalez-Posada Flores;Pierre Fehlen;Monique Thual;Jean-Claude Simon;Jeffrey Hesler;Theodore Reck;Laurent Cerutti;Jean-Baptiste Rodriguez;Philippe Nouvel;Annick Pénarier;Emmanuel Centeno;Thierry Taliercio;Stéphane Blin

引用次数: 0

A Flat-Gain 255–315 GHz Power Amplifier With 15.5 dBm Maximum P$_{text{sat}}$ and 5.5% $eta _{c}$ in 130 nm Advanced SiGe BiCMOS Technology 基于130纳米先进SiGe BiCMOS技术的最大P$ {text{sat}}$和5.5% $eta _{c}$的平坦增益255-315 GHz功率放大器

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-02-10 DOI: 10.1109/TTHZ.2026.3663271

Mohamed Hussein Eissa;Aniello Franzese;Batuhan Sutbas;Corrado Carta;Gerhard Kahmen

{"title":"A Flat-Gain 255–315 GHz Power Amplifier With 15.5 dBm Maximum P$_{text{sat}}$ and 5.5% $eta _{c}$ in 130 nm Advanced SiGe BiCMOS Technology","authors":"Mohamed Hussein Eissa;Aniello Franzese;Batuhan Sutbas;Corrado Carta;Gerhard Kahmen","doi":"10.1109/TTHZ.2026.3663271","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3663271","url":null,"abstract":"This work presents a two-way J-band power amplifier (PA) with a flat-gain response and high saturated output power (P<inline-formula><tex-math>$_{text{sat}}$</tex-math></inline-formula>). The PA is manufactured in an advanced IHP 130-nm BiCMOS technology with experimental <inline-formula><tex-math>$f_{T}$</tex-math></inline-formula> and <inline-formula><tex-math>$f_{text{max}}$</tex-math></inline-formula> of 470 and 650 GHz, respectively. The PA is designed to achieve the state-of-the-art P<inline-formula><tex-math>$_{text{sat}}$</tex-math></inline-formula> and collector efficiency (<inline-formula><tex-math>$eta _{c}$</tex-math></inline-formula>) across a wide bandwidth while maintaining a flat-gain response. The design methodology to achieve these goals is presented. The PA consists of three-cascaded amplification stages with gain staggered interstage matching. The distribution and combining passives also serve as the matching networks for the amplification stages. The fabricated PA was measured demonstrating a maximum collector efficiency of 5.5% at a saturated output power of 15.5 dBm. These results were achieved with a small-signal gain of 20 dB, a flat gain response of <inline-formula><tex-math>$pm$</tex-math></inline-formula>0.6 dB from 255 to 315 GHz. With 0.16 mm<inline-formula><tex-math>$^{text{2}}$</tex-math></inline-formula> of occupied silicon area, this design is well suited for J-band transmitting arrays for communication and sensing applications.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 4","pages":"438-441"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Terahertz Science and Technology Publication Information IEEE太赫兹科学与技术学报出版信息

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-04-03 DOI: 10.1109/TTHZ.2026.3676639

引用次数: 0

3D-Structured Polyethylene Windows for Low-Loss Transmission in Wideband Cryogenic Terahertz Systems 用于宽带低温太赫兹系统低损耗传输的3d结构聚乙烯窗口

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-01-19 DOI: 10.1109/TTHZ.2026.3655493

François Joint;Igor Lapkin;Pierre-Baptiste Vigneron;Emilie Hérault;Denis Meledin;Alexei Pavolotsky;Magnus Strandberg;Sven Erik Ferm;Mathias Fredrixon;Leif Helldner;Erik Sundin;Victor Belitsky;Vincent Desmaris

{"title":"3D-Structured Polyethylene Windows for Low-Loss Transmission in Wideband Cryogenic Terahertz Systems","authors":"François Joint;Igor Lapkin;Pierre-Baptiste Vigneron;Emilie Hérault;Denis Meledin;Alexei Pavolotsky;Magnus Strandberg;Sven Erik Ferm;Mathias Fredrixon;Leif Helldner;Erik Sundin;Victor Belitsky;Vincent Desmaris","doi":"10.1109/TTHZ.2026.3655493","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3655493","url":null,"abstract":"We present the design, fabrication, and characterization of a broadband vacuum window and infrared filter based on ultra-high molecular weight polyethylene (UHMWPE) for millimeter-wave receivers operating across ALMA Band 6 and 7 (211–373 GHz). The window incorporates pyramidal anti-reflection structures, machined directly into the polyethylene using computer numerical control (CNC) machining, which provide impedance matching over a broad frequency range. The structured UHMWPE method is implemented in two distinct components: a vacuum window and a cryogenic infrared filter. This surface-structuring approach provides mechanical robustness, cryogenic compatibility, and low insertion loss. We characterize the transmission properties using terahertz (THz) time-domain spectroscopy, which demonstrates reflection below 5% across the full band. Complementary heterodyne measurements confirm improved receiver noise performance. These results establish 3D-structured UHMWPE as a promising platform for broadband cryogenic optics in high-sensitivity THz instrumentation.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 4","pages":"449-456"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11358766","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Gain Transmitarray Lens Antenna Transceiver for Terahertz Communications 用于太赫兹通信的高增益发射阵列透镜天线收发器

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2025-11-27 DOI: 10.1109/TTHZ.2025.3638129

Zebin Huang;Qun Zhang;Feifan Han;Hao Wang;Shuyi Chen;Weichao Li;Xiongbin Yu;Xiaofeng Tao

{"title":"High Gain Transmitarray Lens Antenna Transceiver for Terahertz Communications","authors":"Zebin Huang;Qun Zhang;Feifan Han;Hao Wang;Shuyi Chen;Weichao Li;Xiongbin Yu;Xiaofeng Tao","doi":"10.1109/TTHZ.2025.3638129","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3638129","url":null,"abstract":"In this article, we present a high gain and broadband transmitarray (TA) lens antenna transceiver for point-to-point high data rate terahertz (THz) wireless communication link. The THz transceiver employs a standard feed horn integrated with a 3-D-printed bracket to enhance the gain and bandwidth of the TA lens antenna, where the TA lens antenna adopts a “sandwich” architecture composed of a V-shaped copper rotator, a dielectric substrate, and a grating. The resonant design of unit cells facilitates full phase control across 0 to 360° by polarization conversion at frequencies between 0.20 and 0.26 THz. Experimental results indicate the fabricated TA lens antenna attains a peak gain of 36.1 dBi and aperture efficiency of 54.45% at 0.244 THz, with a 3-dB bandwidth exceeding 33 GHz. We successfully employed the TA lens antenna to a THz wireless communication experiment. We achieved a single-carrier modulation 100 Gbps data link at a symbol rate of 20 Gbaud for 32-quadrature amplitude modulation (32-QAM), and achieved a bit-error rate of 1.5 × 10<sup>−2</sup> without forward-error correction. This proposed TA lens antenna transceiver offers a high-gain, compact solution for achieving high data rate THz communications.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 4","pages":"417-429"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Efficiency, Coupler-Based D-Band InP PA Stages With Output Power Above 16.4 dBm 高效率，基于耦合器的d波段InP PA级，输出功率超过16.4 dBm

IF 3.9 2区工程技术

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-01-16 DOI: 10.1109/TTHZ.2026.3654237

Dongyang Yan;Adam Cooman;Mark Ingels;Yang Zhang;Piet Wambacq

引用次数: 0