SPIE MOEMS-MEMS最新文献_第4页

Novel optical viscosity sensor based on laser-induced capillary wave 基于激光诱导毛细波的新型光学粘度传感器

SPIE MOEMS-MEMS Pub Date : 2008-02-08 DOI: 10.1117/12.759637

A. Ebisui, Y. Taguchi, Y. Nagasaka

{"title":"Novel optical viscosity sensor based on laser-induced capillary wave","authors":"A. Ebisui, Y. Taguchi, Y. Nagasaka","doi":"10.1117/12.759637","DOIUrl":"https://doi.org/10.1117/12.759637","url":null,"abstract":"In recent years, viscosity has been one of the most important thermophysical properties, and its new sensing applications in a noninvasive method with small sample volume are required in a broad field. For example, in the medical field, the viscosity of body fluid, such as blood, is an essential parameter for diagnosis. In the present study, we have developed a new miniaturized optical viscometer, namely MOVS (Micro Optical Viscosity Sensor), which is applicable to the noninvasive, high speed, small sample volume, in situ and in vivo measurement of a liquid sample in both medical and industrial fields based on laser-induced capillary wave (LiCW) technique. In our experimental setup, two excitation laser beams interfere on a liquid surface and generate the LiCW. By observing the behavior of the LiCW using a probing laser, which contains the surface information of the sample liquid, viscosity and surface tension can be obtained. In this paper, the fabrication of prototype MOVS chip using micro-electro mechanical systems (MEMS) technology for the first time and the discussion of the validity of the viscosity measurement are reported. Preliminary measurement using distilled water was demonstrated, and nanosecond order high speed damping oscillation was successfully observed.","PeriodicalId":130723,"journal":{"name":"SPIE MOEMS-MEMS","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128220282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Fabrication approaches for metallo-dielectric plasmonic waveguides 金属介质等离子体波导的制备方法

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.768161

M. Nezhad, S. Zamek, L. Pang, Y. Fainman

引用次数: 2

Uncertainty analysis on optical testing with a Shack-Hartmann sensor and a point source Shack-Hartmann传感器和点源光学测试的不确定度分析

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.762505

D. Kang, Jin Seok Lee, Ho-Soon Yang, J. Hahn

引用次数: 1

Metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon Schottky contacts 基于单壁碳纳米管-硅肖特基触点的金属-半导体-金属(MSM)光电探测器

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.761935

A. Behnam, Jason L. Johnson, Yongho Choi, M. G. Ertosun, Zhuangchun Wu, A. Rinzler, P. Kapur, K. Saraswat, A. Ural

{"title":"Metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon Schottky contacts","authors":"A. Behnam, Jason L. Johnson, Yongho Choi, M. G. Ertosun, Zhuangchun Wu, A. Rinzler, P. Kapur, K. Saraswat, A. Ural","doi":"10.1117/12.761935","DOIUrl":"https://doi.org/10.1117/12.761935","url":null,"abstract":"We fabricate and experimentally characterize metal-semiconductor-metal (MSM) photodetectors with CNT film Schottky electrodes on n-type and p-type silicon substrates. We extract a Schottky barrier height of ~0.45 eV and ~0.51 eV for CNT films on n-type and p-type Si respectively. The extracted barrier height corresponds to a CNT film workfunction of 4.5-4.7 eV, which is within the range of the previously reported workfunction values for individual CNTs. Furthermore, we find that while at temperatures above 240°K thermionic emission is the dominant transport mechanism, at lower temperatures tunneling begins to dominate. We also characterize the photoresponse of the CNT film-Si MSM photodetector by illuminating the samples with a 633 nm HeNe laser. We observe that while the photocurrent of the CNT film MSM devices is similar to that of the Ti/Au control samples at high biases, their lower dark current results in a higher photo-to-dark current ratio relative to the control devices. We explain these observations by comparing the two interfaces. This work opens up the possibility of integrating CNT films as transparent and conductive Schottky electrodes in conventional semiconductor electronic and optoelectronic devices.","PeriodicalId":130723,"journal":{"name":"SPIE MOEMS-MEMS","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115763674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adaptive optics calibration for a wide-field microscope 宽视场显微镜的自适应光学校准

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.769431

J. Castillo, T. Bifano

引用次数: 2

Dissolved oxygen sensing using organometallic dyes deposited within a microfluidic environment 使用沉积在微流体环境中的有机金属染料的溶解氧传感

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.762666

Q. L. Chen, H. Ho, L. Jin, B. W. Chu, M. Li, V. Yam

{"title":"Dissolved oxygen sensing using organometallic dyes deposited within a microfluidic environment","authors":"Q. L. Chen, H. Ho, L. Jin, B. W. Chu, M. Li, V. Yam","doi":"10.1117/12.762666","DOIUrl":"https://doi.org/10.1117/12.762666","url":null,"abstract":"This work primarily aims to integrate dissolved oxygen sensing capability with a microfluidic platform containing arrays of micro bio-reactors or bio-activity indicators. The measurement of oxygen concentration is of significance for a variety of bio-related applications such as cell culture and gene expression. Optical oxygen sensors based on luminescence quenching are gaining much interest in light of their low power consumption, quick response and high analyte sensitivity in comparison to similar oxygen sensing devices. In our microfluidic oxygen sensor device, a thin layer of oxygen-sensitive luminescent organometallic dye is covalently bonded to a glass slide. Micro flow channels are formed on the glass slide using patterned PDMS (Polydimethylsiloxane). Dissolved oxygen sensing is then performed by directing an optical excitation probe beam to the area of interest within the microfluidic channel. The covalent bonding approach for sensor layer formation offers many distinct advantages over the physical entrapment method including minimizing dye leaching, ensuring good stability and fabrication simplicity. Experimental results confirm the feasibility of the device.","PeriodicalId":130723,"journal":{"name":"SPIE MOEMS-MEMS","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122365372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Degradation evaluation of microelectromechanical thermal actuators 微机电热致动器的退化评价

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.760918

J. K. Luo, Y. Q. Fu, Q. Huang, J. Williams, W. Milne

{"title":"Degradation evaluation of microelectromechanical thermal actuators","authors":"J. K. Luo, Y. Q. Fu, Q. Huang, J. Williams, W. Milne","doi":"10.1117/12.760918","DOIUrl":"https://doi.org/10.1117/12.760918","url":null,"abstract":"Metal based thermal microactuators normally have lower operation temperatures than those of Si-based ones; hence they have great potential for applications. However, metal-based thermal actuators easily suffer from degradation such as plastic deformation. In this study, planar thermal actuators were made by a single mask process using electroplated nickel as the active material, and their thermal degradation has been studied. Electrical tests show that the Ni-based thermal actuators deliver a maximum displacement of ~20 m at an average temperature of ~420 °C, much lower than that of Si-based microactuators. However, the displacement strongly depends on the frequency and peak voltage of the pulse applied. Back bending was clearly observed at a maximum temperature as low as 240 °C. Both forward and backward displacements increase with increasing the temperature up to ~450 °C, and then decreases with power. Scanning electron microscopy observation clearly showed that Ni structure deforms and reflows at power above 50mW. The compressive stress is believed to be responsible for Ni piling-up (creep), while the tensile stress upon removing the pulse current is responsible for necking at the hottest section of the device. Energy dispersive X-ray diffraction analysis revealed severe oxidation of the Ni-structure induced by Joule-heating of the current.","PeriodicalId":130723,"journal":{"name":"SPIE MOEMS-MEMS","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116209040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermopower measurement of freestanding nanowires using a MEMS workbench 基于MEMS工作平台的独立纳米线热功率测量

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.775801

N. Duarte, S. Tadigadapa

引用次数: 0

TCAD tool for innovative MEMS and MOEMS: an all-in-one solution 用于创新MEMS和MOEMS的TCAD工具:一体化解决方案

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.773043

U. Triltsch, S. Büttgenbach

{"title":"TCAD tool for innovative MEMS and MOEMS: an all-in-one solution","authors":"U. Triltsch, S. Büttgenbach","doi":"10.1117/12.773043","DOIUrl":"https://doi.org/10.1117/12.773043","url":null,"abstract":"In this paper we present a TCAD tool for MEMS, which combines process and layout design and provides links to behavioral modeling tools as well as to specialized modules for the optimized design of single components. There is a large amount of new fabrication technologies available which make the design of highly innovative MEMS and MOEMS possible. The design of such systems not only incorporates the layout of masks but also involves the composition of a flawless process chain. TCAD tools for MEMS available today do mostly not support the design of new fabrication processes together with behavioral simulation and layout design. Therefore, there is a need for a methodical approach to component-design, which leads an engineer from single components to a system ready for fabrication. Based on a conceptual model for the design process the latest version of the modular software environment BICEP3S (Braunschweigs Integrated CAD-Environment for Product Planning Process Simulation) is explained. The concept and data model of building blocks on component level, that act as knowledge containers for fabrication ready functional elements of microsystems, are shown in detail. As the detailed simulation of single process steps is crucial in fabrication oriented design cycles, we present an atomistic etch-simulator as one example for specialized simulation modules of our design environment.","PeriodicalId":130723,"journal":{"name":"SPIE MOEMS-MEMS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125450762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The quantum limit for electrical amplifiers: Can we reach it? 电子放大器的量子极限:我们能达到吗?

SPIE MOEMS-MEMS Pub Date : 2008-02-07 DOI: 10.1117/12.778262

A. Rimberg, W. Xue, Z. Ji, F. Pan, J. Stettenheim, T. Gilheart

引用次数: 2