Proceedings of the IEEE 2012 Custom Integrated Circuits Conference最新文献

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A 10.35 mW/GFlop stacked SAR DSP unit using fine-grain partitioned 3D integration 10.35 mW/GFlop叠加SAR DSP单元,采用细粒度分区3D集成
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330589
T. Thorolfsson, S. Lipa, P. Franzon
{"title":"A 10.35 mW/GFlop stacked SAR DSP unit using fine-grain partitioned 3D integration","authors":"T. Thorolfsson, S. Lipa, P. Franzon","doi":"10.1109/CICC.2012.6330589","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330589","url":null,"abstract":"In this paper we present a technique for implementing a fine-grain partitioned three-dimensional SAR DSP system using 3D placement of standard cells where only one of the 3D tiers is clocked to reduce clock power. We show how this technique was used to build the first fine-grain partitioned 3D integrated system to be demonstrated with silicon measurements in the literature, which is an ultra efficient floating-point synthetic aperture radar (SAR) DSP processing unit. The processing unit was fabricated in two tiers of GlobalFoundries, 1.5 V 130nm process that were 3D stacked face-to-face by Tezzaron. After fabrication the test chip was measured to consume 4.14 mW of power while running at 40 MHz operating for an operating efficiency of 10.35 mW/GFlop.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"400 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120973437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A 100 MHz two-phase four-segment DC-DC converter with light load efficiency enhancement in 0.18 μm CMOS technology 基于0.18 μm CMOS技术的100mhz两相四段DC-DC轻负载效率增强变换器
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330631
Han Peng, David I. Anderson, M. Hella
{"title":"A 100 MHz two-phase four-segment DC-DC converter with light load efficiency enhancement in 0.18 μm CMOS technology","authors":"Han Peng, David I. Anderson, M. Hella","doi":"10.1109/CICC.2012.6330631","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330631","url":null,"abstract":"A two-phase four-segment DC-DC converter with novel coupled-inductors output network utilizing phase shedding and phase segmentation is presented for light load efficiency enhancement. The coupled inductor network increases the effective inductance value and reduces inductor current ripple. To improve light load efficiency, resonant gate drivers are employed to reduce driver losses. The DC-DC converter is implemented in 0.18 μm six-metal CMOS technology with 5 V devices, and occupies a total area of 7.77 mm2. The converter achieves a peak efficiency of 77.8% at 6 W output with 5% efficiency improvement at 1 V output due to the use of resonant gate drivers. Furthermore, with phase shedding, the converter maintains peak efficiency as the output current varies from 0.1 A to 1.86 A.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127090509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications 集成MESFET电压跟随器LDO,用于高功率和PSR RF和模拟应用
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330634
W. Lepkowski, S. Wilk, M. R. Ghajar, B. Bakkaloglu, T. Thornton
{"title":"An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications","authors":"W. Lepkowski, S. Wilk, M. R. Ghajar, B. Bakkaloglu, T. Thornton","doi":"10.1109/CICC.2012.6330634","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330634","url":null,"abstract":"A CMOS low dropout linear regulator (LDO) with a MESFET based follower output stage was designed and fabricated on a commercial 45nm SOI CMOS technology. The proposed LDO demonstrates a dropout voltage of <;170mV at 1A load current while occupying 0.245mm2 of die area. The approach includes a novel depletion mode n-channel MESFET in a low output impedance source follower configuration. This enables the LDO to achieve stable operation under all line and load conditions without the need for generating higher internal voltage rails or external compensation. The compact structure and its inherent stability make it ideal for high powered analog, mixed signal and RF system-on-chip applications that require high PSR under different loading conditions.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125867016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A single-chip x-band chirp radar MMIC with stretch processing 单片x波段啁啾雷达MMIC与拉伸处理
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330617
Jianjun Yu, Feng Zhao, Joseph Cali, Desheng Ma, X. Geng, F. Dai, J. Irwin, Andre Aklian
{"title":"A single-chip x-band chirp radar MMIC with stretch processing","authors":"Jianjun Yu, Feng Zhao, Joseph Cali, Desheng Ma, X. Geng, F. Dai, J. Irwin, Andre Aklian","doi":"10.1109/CICC.2012.6330617","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330617","url":null,"abstract":"A single-chip X-band chirp radar transceiver with direct digital synthesis (DDS) for chirp generation is presented. The radar chip, including receiver, transmitter, quadrature DDS, phase-locked loop (PLL) and analog to digital converter (ADC), has been implemented in a 0.13μm BiCMOS technology. The stretch processing technique is employed to translate the time interval between the received and the transmitted chirp signals to a single tone at the baseband output with greatly reduced bandwidth, which allows for the use of a low-cost ADC with a reduced input bandwidth of 10MHz for digitizing the received RF chirp with a bandwidth of 150MHz. A Weaver receiver with a dc-offset is employed in order to use a single ADC for detecting the received quadrature signals with image rejection. A quadrature 1GHz DDS with an inverse sinc function for zero-order hold correction is implemented to provide the chirp signals for both receiver and transmitter. A wide-tuning PLL frequency synthesizer is integrated to generate the local oscillator (LO) signals as well as the clock signal for the DDS and ADC. The implemented radar-on-chip (RoC) MMIC occupies a die area of 3.5 × 2.5mm. With a 2.2V supply voltage for analog/RF and a 1.5V supply for digital, the chip consumes 326mW in the receive mode and 333mW in the transmit mode.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115536250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Modeling local variation of low-frequency noise in MOSFETs via sum of lognormal random variables 基于对数正态随机变量和的mosfet低频噪声局部变化建模
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330573
Bo Yu, Xin Li, J. Yonemura, Zhiyuan Wu, J. Goo, C. Thuruthiyil, A. Icel
{"title":"Modeling local variation of low-frequency noise in MOSFETs via sum of lognormal random variables","authors":"Bo Yu, Xin Li, J. Yonemura, Zhiyuan Wu, J. Goo, C. Thuruthiyil, A. Icel","doi":"10.1109/CICC.2012.6330573","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330573","url":null,"abstract":"In this paper, we investigate the geometry dependence for the local variation of low-frequency noise in MOSFETs via the sum of lognormal random variables. A compact model has been developed and applied to the measured data with excellent match, and therefore enables the coverage of low-frequency noise statistics in circuit design.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116521775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 1.5GHz 0.2psRMS jitter 1.5mW divider-less FBAR ADPLL in 65nm CMOS 基于65nm CMOS的1.5GHz 0.2psRMS抖动1.5mW无分频FBAR ADPLL
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330565
Julie R. Hu, R. Ruby, B. Otis
{"title":"A 1.5GHz 0.2psRMS jitter 1.5mW divider-less FBAR ADPLL in 65nm CMOS","authors":"Julie R. Hu, R. Ruby, B. Otis","doi":"10.1109/CICC.2012.6330565","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330565","url":null,"abstract":"This paper presents a low power, low jitter, PVT-stable film-bulk acoustic wave resonator (FBAR) based all digital phase-locked loop (ADPLL) in a 65nm CMOS process. We introduce a power-efficient integer-N ADPLL architecture, where the digitally-controlled FBAR oscillator (FBAR DCO) achieves phase-lock to a reference clock without any explicit frequency dividers in the feedback path. The simplified divider-less ADPLL has a reduced phase difference at the input of the phase-frequency detector, avoiding a lengthy power hungry time-to-digital converter (TDC). The ADPLL consumes 1.5mW of power and has a measured integrated RMS jitter 0.19ps from 10kHz to 40MHz frequency offset at 1.5GHz carrier frequency. The measured frequency tuning range of 6300ppm for this ADPLL is wide enough to cover the FBAR frequency variations over PVT and provide moderate frequency modulation or channelization. This low power high performance FBAR ADPLL can be used in low power radios, high performance ADCs, and high speed data links.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114134987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 1mJ/frame unified media application processor with a 179.7pJ mixed-mode feature extraction engine for embedded 3D-media contents processing 1mJ/帧统一媒体应用处理器,179.7pJ混合模式特征提取引擎,用于嵌入式3d媒体内容处理
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330650
Hyo-Eun Kim, Jun-Seok Park, Jae-Sung Yoon, Seok-Hoon Kim, L. Kim
{"title":"A 1mJ/frame unified media application processor with a 179.7pJ mixed-mode feature extraction engine for embedded 3D-media contents processing","authors":"Hyo-Eun Kim, Jun-Seok Park, Jae-Sung Yoon, Seok-Hoon Kim, L. Kim","doi":"10.1109/CICC.2012.6330650","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330650","url":null,"abstract":"A unified media application processor (UMAP) with a low-power mixed-mode feature extraction engine (FEE) is presented for 2D/3D image analysis/synthesis applications on handheld devices. UMAP supports not only graphics and vision for augmented reality (AR) but also 3D reconstruction and 3D display for 3D-view AR based on heterogeneous many-core platform. A frame-level 3-stage pipelined architecture enables real-time (50fps in VGA) performance in 3D-view AR, while a mixed-mode FEE dynamically saves active power by reconfiguring operation modes between analog and digital processing. Especially for low power operation in media processing, four pairs of analog current contention logics (CCL) are implemented in FEE. The implemented CCL does not require digital-to-analog or analog-to-digital converters (DAC/ADC) in interfacing digital and analog domains. It includes a diode-connected sensing stabilizer which reduces minimum sensing current. Therefore, average power consumed in CCL is reduced by 44.9%. In the implemented UMAP, the proposed FEE replaces the parallel processing core cluster in the analog processing mode, as a result, 96.5% of cluster power and 99.1% of target detection time are saved. The dynamic mode transition between analog and digital processing based on run-time tracking of region-of-interest (ROI) reduces system energy dissipation by up to 84.2% compared to the state-of-the-art embedded media processors.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129754776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 0.791mm2 fully on-chip controller with self-error-correction for boost DC-DC converter based on Zero-Order Control 基于零阶控制的升压DC-DC变换器的0.791mm2自纠错全片上控制器
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330706
Tae-Hwang Kong, Sung-Wan Hong, Sungwoo Lee, Jong-Pil Im, G. Cho
{"title":"A 0.791mm2 fully on-chip controller with self-error-correction for boost DC-DC converter based on Zero-Order Control","authors":"Tae-Hwang Kong, Sung-Wan Hong, Sungwoo Lee, Jong-Pil Im, G. Cho","doi":"10.1109/CICC.2012.6330706","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330706","url":null,"abstract":"This paper introduces an on-chip controller without off-chip components to reduce controller size for use as a Zero-Order-Control converter (ZOC). DC offset error by adding sawtooth signal in ZOC is self-corrected using a new control scheme, so as to overcome weak point of ZOC. This controller is applicable to both buck and boost, but a boost converter is chosen for verification here. A 0.35μm BCD process is used for chip with controller area of 0.791mm2. An efficiency of 90% is obtained for an 8 V output from 3.7 V at 480mW with 926 KHz.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130370114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 0.5V start-up 87% efficiency 0.75mm2 on-chip feed-forward single-inductor dual-output (SIDO) boost DC-DC converter for battery and solar cell operation sensor network micro-computer integration 一种0.5V启动87%效率0.75mm2片上前馈单电感双输出(SIDO)升压DC-DC变换器,用于电池和太阳能电池运行传感器网络微型计算机集成
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330632
Y. Nakase, Shin-nosuke Hirose, H. Onoda, Y. Ido, Yoshiaki Shimizu, T. Oishi, T. Kumamoto, Toru Shimizu
{"title":"A 0.5V start-up 87% efficiency 0.75mm2 on-chip feed-forward single-inductor dual-output (SIDO) boost DC-DC converter for battery and solar cell operation sensor network micro-computer integration","authors":"Y. Nakase, Shin-nosuke Hirose, H. Onoda, Y. Ido, Yoshiaki Shimizu, T. Oishi, T. Kumamoto, Toru Shimizu","doi":"10.1109/CICC.2012.6330632","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330632","url":null,"abstract":"An on-chip low power single-inductor dual-output DC-DC converter is proposed for battery and solar cell operating sensor network applications. By a new feed-forward control, a test chip fabricated by 190nm CMOS achieves a high efficiency of 87% at the practical load condition with a small area size of 0.75mm2 without any compensation capacitor. In addition, the fluctuation of the output voltage remains within 100mV when the input voltage changes from 1V to 2V. For a solar cell operation, 0.5V start-up is achieved with a process technology of flash-memory embedded micro-computers by utilizing forward back bias. A super capacitor is charged up to 5V from a solar cell with an implemented MPPT.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123977748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology 采用45纳米CMOS技术的0.65V嵌入式SDRAM,具有智能升压和电源管理功能
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI: 10.1109/CICC.2012.6330622
S. Pyo, Jun-Sung Kim, Jung-Han Kim, Hyuntaek Jung, T. Song, Cheol-Ha Lee, Gyu-Hong Kim, Young-Keun Lee, Kee Sup Kim
{"title":"A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology","authors":"S. Pyo, Jun-Sung Kim, Jung-Han Kim, Hyuntaek Jung, T. Song, Cheol-Ha Lee, Gyu-Hong Kim, Young-Keun Lee, Kee Sup Kim","doi":"10.1109/CICC.2012.6330622","DOIUrl":"https://doi.org/10.1109/CICC.2012.6330622","url":null,"abstract":"In this paper, an embedded SDRAM (eSDRAM) with smart boosting and power management (SB-PM) scheme for low power operation has been designed. SB-PM scheme decreases 40.3% of dynamic power and 69.1% of standby power consumption with ECC compared with the conventional scheme. A 266-Mb eSDRAM with SB-PM scheme is designed in a 45-nm CMOS technology showing 51.2-mW dynamic power and 2.05mW standby power consumption at VDD=0.65V and 85°C.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128126374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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