Modeling local variation of low-frequency noise in MOSFETs via sum of lognormal random variables

Bo Yu, Xin Li, J. Yonemura, Zhiyuan Wu, J. Goo, C. Thuruthiyil, A. Icel
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引用次数: 7

Abstract

In this paper, we investigate the geometry dependence for the local variation of low-frequency noise in MOSFETs via the sum of lognormal random variables. A compact model has been developed and applied to the measured data with excellent match, and therefore enables the coverage of low-frequency noise statistics in circuit design.
基于对数正态随机变量和的mosfet低频噪声局部变化建模
本文通过对数正态随机变量的和研究了mosfet中低频噪声局部变化的几何依赖关系。开发了一种紧凑的模型,并将其应用于测量数据,具有良好的匹配性,从而可以在电路设计中覆盖低频噪声统计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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