Bo Yu, Xin Li, J. Yonemura, Zhiyuan Wu, J. Goo, C. Thuruthiyil, A. Icel
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引用次数: 7
Abstract
In this paper, we investigate the geometry dependence for the local variation of low-frequency noise in MOSFETs via the sum of lognormal random variables. A compact model has been developed and applied to the measured data with excellent match, and therefore enables the coverage of low-frequency noise statistics in circuit design.