A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

Abstract

In this paper, an embedded SDRAM (eSDRAM) with smart boosting and power management (SB-PM) scheme for low power operation has been designed. SB-PM scheme decreases 40.3% of dynamic power and 69.1% of standby power consumption with ECC compared with the conventional scheme. A 266-Mb eSDRAM with SB-PM scheme is designed in a 45-nm CMOS technology showing 51.2-mW dynamic power and 2.05mW standby power consumption at VDD=0.65V and 85°C.