基于对数正态随机变量和的mosfet低频噪声局部变化建模

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI:10.1109/CICC.2012.6330573

Bo Yu, Xin Li, J. Yonemura, Zhiyuan Wu, J. Goo, C. Thuruthiyil, A. Icel

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引用次数: 7

摘要

本文通过对数正态随机变量的和研究了mosfet中低频噪声局部变化的几何依赖关系。开发了一种紧凑的模型，并将其应用于测量数据，具有良好的匹配性，从而可以在电路设计中覆盖低频噪声统计。

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Modeling local variation of low-frequency noise in MOSFETs via sum of lognormal random variables

In this paper, we investigate the geometry dependence for the local variation of low-frequency noise in MOSFETs via the sum of lognormal random variables. A compact model has been developed and applied to the measured data with excellent match, and therefore enables the coverage of low-frequency noise statistics in circuit design.

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Proceedings of the IEEE 2012 Custom Integrated Circuits Conference

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