S. Pyo, Jun-Sung Kim, Jung-Han Kim, Hyuntaek Jung, T. Song, Cheol-Ha Lee, Gyu-Hong Kim, Young-Keun Lee, Kee Sup Kim
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A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology
In this paper, an embedded SDRAM (eSDRAM) with smart boosting and power management (SB-PM) scheme for low power operation has been designed. SB-PM scheme decreases 40.3% of dynamic power and 69.1% of standby power consumption with ECC compared with the conventional scheme. A 266-Mb eSDRAM with SB-PM scheme is designed in a 45-nm CMOS technology showing 51.2-mW dynamic power and 2.05mW standby power consumption at VDD=0.65V and 85°C.
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