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2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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Research on radiation hardened technology of silicon based high frequency low power transisto 硅基高频低功率晶体管抗辐射技术研究
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588778
He Lv, Hongwei Zhang, B. Mei, Qingkui Yu, Yi Sun, Pengwei Li
{"title":"Research on radiation hardened technology of silicon based high frequency low power transisto","authors":"He Lv, Hongwei Zhang, B. Mei, Qingkui Yu, Yi Sun, Pengwei Li","doi":"10.1109/icreed52909.2021.9588778","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588778","url":null,"abstract":"In this paper, Co-60 is used as the irradiation source, and the radiation evolution of the deep level defects and the electrical properties of 3DG2484 transistor are studied by using semiconductor parameter analyzer and deep level defect transient spectrometer. According to the radiation degradation and the transistor manufacturing technology, the radiation hardening methods such as optimizing the oxide layer process, increasing the passivation layer thickness, improving the base surface state, adjusting the base surface concentration and heavy metal doping (Platinum) are proposed. And the experimental verification is carried out.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116877020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SEU effects induced by Reactor Spallation and Accelerator neutron sources in Nano-SRAMs 反应堆散裂和加速器中子源在纳米sram中诱导的SEU效应
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588670
Junlin Li, Wei Chen, Wei Wu, Xiaoming Jin, Ruibin Li, Chao Qi, Minbo Liu, Yan Liu
{"title":"SEU effects induced by Reactor Spallation and Accelerator neutron sources in Nano-SRAMs","authors":"Junlin Li, Wei Chen, Wei Wu, Xiaoming Jin, Ruibin Li, Chao Qi, Minbo Liu, Yan Liu","doi":"10.1109/icreed52909.2021.9588670","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588670","url":null,"abstract":"This paper presents the experimental research of neutron induced single event upset (SEU) in Nano-SRAMs which was carried out in CSNS (China Spallation Neutron Source), CIAE (China institute of atomic energy) and XAPR (Xi’an pulsed reactor). The SEU cross section of Nano-SRAMs with four different feature sizes were measured. Experimental results indicated that the neutron induced SEU cross section were heavily dependent on the feature size of SRAM and the data pattern written to SRAM had little impact on the SEU cross section. We compared experimental results of white neutrons from CSNS to 2.5Mev, 14MeV neutrons from CIAE and reactor neutrons from XAPR. The comparison results showed that the neutron induced SEU cross section had a strong dependence on the energy of incident neutron. And the SEU cross section of Nano-SRAMs varies with different feature sizes obtained from different neutron sources has the same tendency.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123856561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experiment and Simulation of Transient Ionizing Radiation Hardening in the 0.18μm CMOS LDO 0.18μm CMOS LDO瞬态电离辐射硬化实验与仿真
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588700
Weiyi Cao, Yuanfu Zhao, Liang Wang, Cheng-Long Sui, Xupeng Han, Ruilong Han
{"title":"Experiment and Simulation of Transient Ionizing Radiation Hardening in the 0.18μm CMOS LDO","authors":"Weiyi Cao, Yuanfu Zhao, Liang Wang, Cheng-Long Sui, Xupeng Han, Ruilong Han","doi":"10.1109/icreed52909.2021.9588700","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588700","url":null,"abstract":"A time-skewed space-split hardening structure of power MOS in the 0.18μm bulk silicon CMOS LDO under transient ionizing radiation is investigated by laser experiment and SPICE simulation. Experimental and numerical results of common and hardened LDO show the hardened power MOS transistors being effective on the mitigation of output disturbance pulse width.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114766424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total Ionizing Dose (TID) of Phase Change Random Access Memory 相变随机存取存储器的总电离剂量
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588721
Xing-yao Zhang, Qi Guo, Dong Zhou, Yudong Li
{"title":"Total Ionizing Dose (TID) of Phase Change Random Access Memory","authors":"Xing-yao Zhang, Qi Guo, Dong Zhou, Yudong Li","doi":"10.1109/icreed52909.2021.9588721","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588721","url":null,"abstract":"Phase Change Random Access Memory (PCRAM) were irradiated by 60Co γ-rays and electron beam, and used different temperature to anneal after irradiation. The DC parameters and function were tested by very large scale integrated (VLSI) circuit tester. The function of device was failure in radiation, and some DC parameters as radiation-sensitive parameters were changed. Total ionizing dose (TID) failure mechanism and annealing characteristics of PCRAM were discussed by analyzing radiation-sensitive parameters. Function failure of device would be explained through four reasons, which were read interference error, write error, program interference error and open fault for memory cell. Oxide trapped charge and interface trap were those faults cause.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115198498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transient radiation effects in several types of LDO 几种LDO的瞬态辐射效应
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588675
Ruibin Li, Junlin Li, Chenhui Wang, Chaohui He, Wei Chen, Xiaoming Jin, Chao Qi, Xiaoyan Bai, Yan Liu, Guizhen Wang
{"title":"Transient radiation effects in several types of LDO","authors":"Ruibin Li, Junlin Li, Chenhui Wang, Chaohui He, Wei Chen, Xiaoming Jin, Chao Qi, Xiaoyan Bai, Yan Liu, Guizhen Wang","doi":"10.1109/icreed52909.2021.9588675","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588675","url":null,"abstract":"several types of Low drop-out (LDO) regulator, manufactured in different technologies, are irradiated in the transient radiation environment. The experimental results show that outputs of all of LDOs are disrupted when irradiated. For the LDO manufactured in the complimentary metal-oxide -semiconductor (CMOS) technology, latch up (LU) occurs at the lower dose rate due to the parasitical PNPN structure, and the output voltage drops to zero. For the LDOs manufactured in the bipolar technology, if based on the two bipolar junction transistors (BJTs) band gap reference source, the output voltages are pulled up to the higher levels. If based on the three BJTs band gap reference source, the output voltages are pulled down to the lower levels. However, the output voltage disturbances of the bipolar LDOs recover in several micro minutes. In addition, different types of load result in different radiation responses of LDOs.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116294981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TCAD Simulation and Primary Experimental Investigations on the Performance of the 3D Si SOI PN Array Microdosimeters 三维硅SOI PN阵列微剂量计性能的TCAD仿真及初步实验研究
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588691
Yixian Guo, Shuhuan Liu, Zhuqi Li, Long Li, Yong Ma, Ning Han, Zheng Li
{"title":"TCAD Simulation and Primary Experimental Investigations on the Performance of the 3D Si SOI PN Array Microdosimeters","authors":"Yixian Guo, Shuhuan Liu, Zhuqi Li, Long Li, Yong Ma, Ning Han, Zheng Li","doi":"10.1109/icreed52909.2021.9588691","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588691","url":null,"abstract":"For evaluating and measuring microdosimetry magnitudes in radiobiology or other ionizing irradiation environment with semiconductor detector, the Si SOI PN array microdosimeters with full-3D cell-sized pixel sensitive volume and small dead area was proposed in this paper. The detector energy and angular response , charge sharing and transient characteristics of typical electronic parameters including electronic field, transient current, collection charge, etc. were simulated with Sentaurus TCAD. The bias voltage, radiation displacement damage and microdosimeter structure influenced on the detector charge collection and other electronic parameters were calculated and analyzed. Meanwhile, the leakage current and capacitance of some typical structure 3D Si SOI PN array microdosimeters were primarily measured and compared.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"224 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127189923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Construction of an in-situ radiation test system for semiconductor materials and devices based on a 4.5 MV accelerator 基于4.5 MV加速器的半导体材料与器件原位辐射测试系统的构建
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588711
Xiuyu Zhang, Yuan Gao, Yifan Zhang, J. Xue
{"title":"Construction of an in-situ radiation test system for semiconductor materials and devices based on a 4.5 MV accelerator","authors":"Xiuyu Zhang, Yuan Gao, Yifan Zhang, J. Xue","doi":"10.1109/icreed52909.2021.9588711","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588711","url":null,"abstract":"Real-time monitoring the electrical property of semiconductor materials and devices under irradiation can minimize the impact of room temperature annealing and obtain data conveniently. In this work, an in-situ radiation test system was constructed based on a 4.5 MV accelerator and used to measure the electrical property of 4H-SiC under 2 MeV protons irradiation. The results show that the resistance of 4H-SiC increases when the ion fluence increases from 6.37×1013 cm−2 to 8.16×1015 cm−2, showing the system is a powerful tool to investigate the in-situ change of the resistance under MeV ion irradiation.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126065153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of Ge Profile on TID Susceptibility of SiGe HBTs Ge谱对SiGe HBTs TID敏感性的影响
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588725
Jianan Wei, Chaohui He, Peijian Zhang, Xiaojun Fu, H. Guo, Ting Luo
{"title":"Impact of Ge Profile on TID Susceptibility of SiGe HBTs","authors":"Jianan Wei, Chaohui He, Peijian Zhang, Xiaojun Fu, H. Guo, Ting Luo","doi":"10.1109/icreed52909.2021.9588725","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588725","url":null,"abstract":"The impact of Ge profile on the TID susceptibility of SiGe HBTs from two manufacturers is investigated based on TCAD simulation. The results indicate that the modulation of potential distribution across the base region by Ge grading has significant impacts on the base current degradation. The Box Ge profile can cause a strong retarding potential near the EB junction, thereby leading to high recombination rates at the trap-enriched EB-spacer/SiGe interface. While Ge profiles with high accelerating field near the EB junction can prevent the injected carriers from diffusing to the EB-spacer/SiGe interface and suppress the increase of excess base current. Besides, this impact of Ge profile is closely related to the base thickness and integrated Ge content.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129181800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of cylinder SGEMP radiated by X-ray x射线辐射圆柱形SGEMP的模拟
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588672
Huifang Sun, Lingyu Zhang, Wenyuan Yang
{"title":"Simulation of cylinder SGEMP radiated by X-ray","authors":"Huifang Sun, Lingyu Zhang, Wenyuan Yang","doi":"10.1109/icreed52909.2021.9588672","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588672","url":null,"abstract":"The whole 3D simulation of SGEMP from X-ray to electromagnetic field environment is realized by developing 3D PIC code with compiling MC function modules in it, so that photoelectrons of arbitrary energy, angular, spatial and time distributions which calculated by transport code JMCT could be transformed into the initial current source used in PIC simulation directly. The simulation results are analyzed preliminarily. It is obtained that the emitted current is 0.11 A while the electric field could get 100 kV/m and magnetic field is over 1.6×10−6 T when the blackbody X-ray of temperature 1 keV and emitted fluence 1 J/cm2 perpendicularly irradiates the side of cylindrical object with material of Al and height of 2.0 cm, radius of 1.0 cm.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"46 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126890696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of on-line monitoring system for radiation effect of high speed AD converter 高速模数转换器辐射效应在线监测系统的研制
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588745
Wun-Dong Han, Tu Jinghai, Zhao Xuelin
{"title":"Development of on-line monitoring system for radiation effect of high speed AD converter","authors":"Wun-Dong Han, Tu Jinghai, Zhao Xuelin","doi":"10.1109/icreed52909.2021.9588745","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588745","url":null,"abstract":"In this paper, a on-line monitoring system is developed to meet the special requirement of real-time monitoring of A/D converter’s radiation effect. The experimental results show that the system can monitor the output code of the device in real time and correctly reflect the radiation effect damage of the device.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127618296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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