TCAD Simulation and Primary Experimental Investigations on the Performance of the 3D Si SOI PN Array Microdosimeters

For evaluating and measuring microdosimetry magnitudes in radiobiology or other ionizing irradiation environment with semiconductor detector, the Si SOI PN array microdosimeters with full-3D cell-sized pixel sensitive volume and small dead area was proposed in this paper. The detector energy and angular response , charge sharing and transient characteristics of typical electronic parameters including electronic field, transient current, collection charge, etc. were simulated with Sentaurus TCAD. The bias voltage, radiation displacement damage and microdosimeter structure influenced on the detector charge collection and other electronic parameters were calculated and analyzed. Meanwhile, the leakage current and capacitance of some typical structure 3D Si SOI PN array microdosimeters were primarily measured and compared.