Experiment and Simulation of Transient Ionizing Radiation Hardening in the 0.18μm CMOS LDO

Abstract

A time-skewed space-split hardening structure of power MOS in the 0.18μm bulk silicon CMOS LDO under transient ionizing radiation is investigated by laser experiment and SPICE simulation. Experimental and numerical results of common and hardened LDO show the hardened power MOS transistors being effective on the mitigation of output disturbance pulse width.