Research on radiation hardened technology of silicon based high frequency low power transisto

Abstract

In this paper, Co-60 is used as the irradiation source, and the radiation evolution of the deep level defects and the electrical properties of 3DG2484 transistor are studied by using semiconductor parameter analyzer and deep level defect transient spectrometer. According to the radiation degradation and the transistor manufacturing technology, the radiation hardening methods such as optimizing the oxide layer process, increasing the passivation layer thickness, improving the base surface state, adjusting the base surface concentration and heavy metal doping (Platinum) are proposed. And the experimental verification is carried out.