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2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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The impact of driving capacity on single-event effect vulnerability of standard cell 驱动容量对标准电池单事件效应脆弱性的影响
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588741
Ding-jiu Wang, L. Ding, Wei Chen, TanWang, Jingyan Xu, Yinhong Luo
{"title":"The impact of driving capacity on single-event effect vulnerability of standard cell","authors":"Ding-jiu Wang, L. Ding, Wei Chen, TanWang, Jingyan Xu, Yinhong Luo","doi":"10.1109/icreed52909.2021.9588741","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588741","url":null,"abstract":"The impacts of driving capacity on single-event effect vulnerability of 40 nm standard cells were studied. The result shows that cells with high driving capacity are inclined to have stronger single-event effect tolerance. AND gate has smaller SET cross section and transient pulse width than OR gate and D flip-flop.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128128633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental study of the Single Event Effects in E-mode GaN HEMT with Heavy Ion Irradiation 重离子辐照下e模GaN HEMT单事件效应的实验研究
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588747
Lihao Wang, Yunpeng Jia, Yuanfu Zhao, Liang Wang, Zhonghan Deng
{"title":"Experimental study of the Single Event Effects in E-mode GaN HEMT with Heavy Ion Irradiation","authors":"Lihao Wang, Yunpeng Jia, Yuanfu Zhao, Liang Wang, Zhonghan Deng","doi":"10.1109/icreed52909.2021.9588747","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588747","url":null,"abstract":"In this paper, an experimental characterization of the behavior of commercial 200V/48A Enhancement-mode GaN HEMTs under heavy ion irradiation is presented. The damage caused by SEE may cumulative and permanent, which makes the drain leakage current gradually increase. Regardless of whether SEE occurs, the threshold voltage will shift after heavy ion irradiation. The increase in output capacitance and reverse transfer capacitance means that the AlGaN buffer layer is partially damaged, resulting in an increase in drain leakage current.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127494926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation Hardness Assurance of Single Event Effects on Components for Space Application 空间应用中单事件对部件的辐射硬度保证
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588712
Pengwei Li, L. Zhen, Xingji Li, Jianqun Yang, Hongwei Zhang, Yi Sun, B. Mei, He Lv, Rigen Mo, Qingkui Yu, M. Tang
{"title":"Radiation Hardness Assurance of Single Event Effects on Components for Space Application","authors":"Pengwei Li, L. Zhen, Xingji Li, Jianqun Yang, Hongwei Zhang, Yi Sun, B. Mei, He Lv, Rigen Mo, Qingkui Yu, M. Tang","doi":"10.1109/icreed52909.2021.9588712","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588712","url":null,"abstract":"In order to solve the problem of space single event effects (SEE), the technology of radiation hardness assurance (RHA) on SEEs of components has been studied, the requirements of RHA on SEEs of components for space application has been analyzed, the technical process of RHA on SEEs based on components has established; The evaluation requirements, data processing, risk analysis, single event mitigation methods and on orbit flight test of components have been given according to the sensitivity of different process components on SEEs. At last, the conclusion and suggestion of RHA on SEEs are given.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128156041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of Synergetic Radiation Effects for P-type bulk VDMOS p型体VDMOS的协同辐射效应模拟
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588742
Tiexin Zhang, Fanyu Liu, Bo Li, Z. Zheng, F. Zhao, Junjun Zhang, Bo Dai
{"title":"Simulation of Synergetic Radiation Effects for P-type bulk VDMOS","authors":"Tiexin Zhang, Fanyu Liu, Bo Li, Z. Zheng, F. Zhao, Junjun Zhang, Bo Dai","doi":"10.1109/icreed52909.2021.9588742","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588742","url":null,"abstract":"In this paper, we performed Geant4 and TCAD simulations in order to interpret the mechanism of synergetic effects of single event effect (SEE), total ion dose (TID) and charging and discharging effect (CDE) for P-type bulk VDMOS.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117226593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of the Total Ionization Dose Effect of Gate-Controlled Lateral PNP Bipolar Transistors 门控侧边PNP双极晶体管总电离剂量效应的模拟
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588664
Zhaocan Ma, Guangrong Li, Zhenguo Zhao, Weijie Wang
{"title":"Simulation of the Total Ionization Dose Effect of Gate-Controlled Lateral PNP Bipolar Transistors","authors":"Zhaocan Ma, Guangrong Li, Zhenguo Zhao, Weijie Wang","doi":"10.1109/icreed52909.2021.9588664","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588664","url":null,"abstract":"In order to study the total dose effect and hardness assurance technology for the bipolar devices, various technologies are performed on Gate-Controlled Lateral PNP bipolar junction transistors (BJT). Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for trapped holes and interface traps, which are calculated by gate sweep characterization technique. Combined with the coupled ionization damage trap model, ionization damage effects on GCLPNP are simulated on the semiconductor multi-physical parallel computing program JEMS-CDS-Device, a domestic software solve electric-carrier transport-thermal problem. The phenomena of excess base current and current gain degradation in GCLPNP Gummel sweep are successfully simulated via numerical calculation.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125010826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation stability and in situ electrical stress healing of photodetection performance on α-In2Se3 based transistors α-In2Se3基晶体管光探测性能的辐射稳定性和原位电应力愈合
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588791
Pengfei Hou, Xinhao Wang, H. Guo, X. Ouyang
{"title":"Radiation stability and in situ electrical stress healing of photodetection performance on α-In2Se3 based transistors","authors":"Pengfei Hou, Xinhao Wang, H. Guo, X. Ouyang","doi":"10.1109/icreed52909.2021.9588791","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588791","url":null,"abstract":"In this work, α-In<inf>2</inf>Se<inf>3</inf> based transistors with channel widths of 20 μm have been irradiated with <sup>60</sup>Co γ-rays. The radiation induced photoresponsivity degradation, radiation stability, and time annealing effect on α-In<inf>2</inf>Se<inf>3</inf> based transistor have been investigated. Both the radiation induced domain evolution and the time annealing effect decrease the photoresponsivity of α-In<inf>2</inf>Se<inf>3</inf> based transistor. Phonon modes, domain structure, and surface topography of the α-In<inf>2</inf>Se<inf>3</inf> nanoflakes have been investigated in details for revealing the mechanism of the photoresponsivity degradation. The results show that the surface topography damage of α-In<inf>2</inf>Se<inf>3</inf> may be the main factor affecting the radiation stability in the time annealing. It is very interesting that the in-situ electric stress can heal the photoresponsivity decreased by the time annealing effect, because the captured free carriers can be freed by the voltage sweeping. Considering that the α-In<inf>2</inf>Se<inf>3</inf> based transistors can still be used as photodetectors after an irradiation of 1 Mrad(Si) and a time annealing of one year, α- In<inf>2</inf>Se<inf>3</inf> is promising for photodetector in extreme environmental conditions.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129453640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiple transient photocurrents coupled simulation based on AD8561 MACRO-SPICE Model 基于AD8561宏spice模型的多瞬态光电流耦合仿真
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588740
Yang Li, Jianan Wei, Chaohui He, Weitao Yang, Yonghong Li, Yaxin Guo
{"title":"Multiple transient photocurrents coupled simulation based on AD8561 MACRO-SPICE Model","authors":"Yang Li, Jianan Wei, Chaohui He, Weitao Yang, Yonghong Li, Yaxin Guo","doi":"10.1109/icreed52909.2021.9588740","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588740","url":null,"abstract":"AD8561 (Analog Device Inc.) MACRO-SPICE model is used to investigate the coupled effects of multiple photocurrents generated by gamma pulse radiation in its Input and Output modules. Firstly, the test circuit is built to find sensitive devices according to previous studies. Besides, Gummel-Poon bipolar junction transistor (BJT) model including photocurrent generators implemented by the exponential current sources is adopted to replace the initial device model. Finally, the effects caused by each photocurrent and multiple photocurrents under different input states are simulated and analyzed. The simulation results indicate that there are competitive relationships among the multiple photocurrents generated in the input-stage bipolar transistors, even in a single bipolar transistor, and the relationship changes with the input state. The transient upset induced by photocurrents generated in the Input and Output modules have superimposed effects on the output ports, but the transient upset duration depends mainly on the Input module.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125158430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 12-Channel 10 Gbps/ch VCSEL Driver ASIC in 55 nm CMOS for High-Energy Physics Experiments-辐射效应国际会议 用于高能物理实验的55nm CMOS 12通道10gbps /ch VCSEL驱动ASIC
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI: 10.1109/icreed52909.2021.9588750
Cong Zhao, D. Guo, Hanhan Sun, Xiangming Sun, L. Xiao, Wei Zhang
{"title":"A 12-Channel 10 Gbps/ch VCSEL Driver ASIC in 55 nm CMOS for High-Energy Physics Experiments-辐射效应国际会议","authors":"Cong Zhao, D. Guo, Hanhan Sun, Xiangming Sun, L. Xiao, Wei Zhang","doi":"10.1109/icreed52909.2021.9588750","DOIUrl":"https://doi.org/10.1109/icreed52909.2021.9588750","url":null,"abstract":"VCSEL-based array optical data transmission system has been prevailingly developed for the front-end readout systems and is foreseen to become the important infrastructure of the high energy physics experiments in the future. This paper presents the design and test results of a 12 × 10 Gbps/ch VCSEL driver ASIC fabricated in a standard 55nm CMOS technology. In the single channel core of the chip, a 4-step input equalizer stage was used to compensate the high frequency loss and optimize the eye quality. The pre-driver (limiting amplifier) stage uses the shared inductor technique to obtain sufficient bandwidth (16.5 dB, 8.3 GHz) in a limited area, and the output driver stage employs both the programmable R-C degradation structure and the feed-forward capacitor technology to further improve the bandwidth. The whole chip features a size of 1.45 x 4.00 mm2 with a total power consumption of 426 mW when 12 channels are all enabled. The test results show uniform and wide-open 10-Gbps eyes when multiple channels are working simultaneously. The chip has also been tested in the X-ray radiation environment with a total dose up to 500 krad, and no malfunction and performance degradation was found in the test.","PeriodicalId":129675,"journal":{"name":"2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129273602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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