Simulation of the Total Ionization Dose Effect of Gate-Controlled Lateral PNP Bipolar Transistors

Abstract

In order to study the total dose effect and hardness assurance technology for the bipolar devices, various technologies are performed on Gate-Controlled Lateral PNP bipolar junction transistors (BJT). Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for trapped holes and interface traps, which are calculated by gate sweep characterization technique. Combined with the coupled ionization damage trap model, ionization damage effects on GCLPNP are simulated on the semiconductor multi-physical parallel computing program JEMS-CDS-Device, a domestic software solve electric-carrier transport-thermal problem. The phenomena of excess base current and current gain degradation in GCLPNP Gummel sweep are successfully simulated via numerical calculation.