驱动容量对标准电池单事件效应脆弱性的影响

2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI:10.1109/icreed52909.2021.9588741

Ding-jiu Wang, L. Ding, Wei Chen, TanWang, Jingyan Xu, Yinhong Luo

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引用次数: 0

摘要

研究了驱动容量对40nm标准细胞单事件效应易损性的影响。结果表明，高驱动容量的细胞往往具有较强的单事件效应耐受性。与门具有比或门和D触发器更小的SET截面和瞬态脉宽。

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The impact of driving capacity on single-event effect vulnerability of standard cell

The impacts of driving capacity on single-event effect vulnerability of 40 nm standard cells were studied. The result shows that cells with high driving capacity are inclined to have stronger single-event effect tolerance. AND gate has smaller SET cross section and transient pulse width than OR gate and D flip-flop.

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来源期刊

2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)

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