Simulation of Synergetic Radiation Effects for P-type bulk VDMOS

2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI:10.1109/icreed52909.2021.9588742

Tiexin Zhang, Fanyu Liu, Bo Li, Z. Zheng, F. Zhao, Junjun Zhang, Bo Dai

引用次数: 1

Abstract

In this paper, we performed Geant4 and TCAD simulations in order to interpret the mechanism of synergetic effects of single event effect (SEE), total ion dose (TID) and charging and discharging effect (CDE) for P-type bulk VDMOS.

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p型体VDMOS的协同辐射效应模拟

本文通过Geant4和TCAD模拟，分析了p型体VDMOS中单事件效应(SEE)、总离子剂量(TID)和充放电效应(CDE)协同作用的机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)

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