用于高能物理实验的55nm CMOS 12通道10gbps /ch VCSEL驱动ASIC

Cong Zhao, D. Guo, Hanhan Sun, Xiangming Sun, L. Xiao, Wei Zhang
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引用次数: 0

摘要

基于vcsel的阵列光数据传输系统已广泛应用于前端读出系统,有望成为未来高能物理实验的重要基础设施。本文介绍了采用标准55nm CMOS工艺制作的12 × 10 Gbps/ch VCSEL驱动专用集成电路的设计和测试结果。在芯片的单通道核心中,采用4步输入均衡器级补偿高频损耗,优化视质。预驱动(限制放大器)级采用共享电感技术在有限区域内获得足够的带宽(16.5 dB, 8.3 GHz),输出驱动级采用可编程R-C退化结构和前馈电容技术进一步提高带宽。整个芯片的尺寸为1.45 x 4.00 mm2,当12通道全部启用时,总功耗为426 mW。测试结果显示,当多个通道同时工作时,10gbps眼睛均匀且大开。该芯片还在总剂量高达500克拉的x射线辐射环境中进行了测试,测试中没有发现故障和性能下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12-Channel 10 Gbps/ch VCSEL Driver ASIC in 55 nm CMOS for High-Energy Physics Experiments-辐射效应国际会议
VCSEL-based array optical data transmission system has been prevailingly developed for the front-end readout systems and is foreseen to become the important infrastructure of the high energy physics experiments in the future. This paper presents the design and test results of a 12 × 10 Gbps/ch VCSEL driver ASIC fabricated in a standard 55nm CMOS technology. In the single channel core of the chip, a 4-step input equalizer stage was used to compensate the high frequency loss and optimize the eye quality. The pre-driver (limiting amplifier) stage uses the shared inductor technique to obtain sufficient bandwidth (16.5 dB, 8.3 GHz) in a limited area, and the output driver stage employs both the programmable R-C degradation structure and the feed-forward capacitor technology to further improve the bandwidth. The whole chip features a size of 1.45 x 4.00 mm2 with a total power consumption of 426 mW when 12 channels are all enabled. The test results show uniform and wide-open 10-Gbps eyes when multiple channels are working simultaneously. The chip has also been tested in the X-ray radiation environment with a total dose up to 500 krad, and no malfunction and performance degradation was found in the test.
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