Ge谱对SiGe HBTs TID敏感性的影响

2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2021-05-26 DOI:10.1109/icreed52909.2021.9588725

Jianan Wei, Chaohui He, Peijian Zhang, Xiaojun Fu, H. Guo, Ting Luo

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引用次数: 1

摘要

在TCAD仿真的基础上，研究了Ge剖面对两家厂商SiGe HBTs的TID磁化率的影响。结果表明，Ge分级对基极区电位分布的调制对基极电流退化有显著影响。Box - Ge谱在EB结附近产生了很强的延迟电位，从而导致富集的EB-间隔层/SiGe界面处的高重组率。而在EB结附近具有高加速场的Ge分布可以阻止注入的载流子扩散到EB-spacer/SiGe界面，抑制过量基极电流的增加。此外，Ge剖面的影响与基底厚度和综合Ge含量密切相关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of Ge Profile on TID Susceptibility of SiGe HBTs

The impact of Ge profile on the TID susceptibility of SiGe HBTs from two manufacturers is investigated based on TCAD simulation. The results indicate that the modulation of potential distribution across the base region by Ge grading has significant impacts on the base current degradation. The Box Ge profile can cause a strong retarding potential near the EB junction, thereby leading to high recombination rates at the trap-enriched EB-spacer/SiGe interface. While Ge profiles with high accelerating field near the EB junction can prevent the injected carriers from diffusing to the EB-spacer/SiGe interface and suppress the increase of excess base current. Besides, this impact of Ge profile is closely related to the base thickness and integrated Ge content.

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2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)

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