Total Ionizing Dose (TID) of Phase Change Random Access Memory

Abstract

Phase Change Random Access Memory (PCRAM) were irradiated by 60Co γ-rays and electron beam, and used different temperature to anneal after irradiation. The DC parameters and function were tested by very large scale integrated (VLSI) circuit tester. The function of device was failure in radiation, and some DC parameters as radiation-sensitive parameters were changed. Total ionizing dose (TID) failure mechanism and annealing characteristics of PCRAM were discussed by analyzing radiation-sensitive parameters. Function failure of device would be explained through four reasons, which were read interference error, write error, program interference error and open fault for memory cell. Oxide trapped charge and interface trap were those faults cause.